Hidetoshi Fujimoto

436 total citations
10 papers, 355 citations indexed

About

Hidetoshi Fujimoto is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, Hidetoshi Fujimoto has authored 10 papers receiving a total of 355 indexed citations (citations by other indexed papers that have themselves been cited), including 7 papers in Atomic and Molecular Physics, and Optics, 7 papers in Electrical and Electronic Engineering and 6 papers in Condensed Matter Physics. Recurrent topics in Hidetoshi Fujimoto's work include Semiconductor Quantum Structures and Devices (7 papers), GaN-based semiconductor devices and materials (6 papers) and Semiconductor materials and devices (4 papers). Hidetoshi Fujimoto is often cited by papers focused on Semiconductor Quantum Structures and Devices (7 papers), GaN-based semiconductor devices and materials (6 papers) and Semiconductor materials and devices (4 papers). Hidetoshi Fujimoto collaborates with scholars based in Japan and South Korea. Hidetoshi Fujimoto's co-authors include Johji Nishio, Lisa Sugiura, Kazuhiko Itaya, Yoshihiro Kokubun, Wataru Saito, Mariko Suzuki, Shinya Nunoue, J. Rennie, Akira Yoshioka and S. Saito and has published in prestigious journals such as Applied Physics Letters, Surface Science and Japanese Journal of Applied Physics.

In The Last Decade

Hidetoshi Fujimoto

10 papers receiving 341 citations

Peers

Hidetoshi Fujimoto
M. Hansen United States
R. Beccard Germany
Y. Smorchkova United States
P. Drechsel Germany
C.H. Liu Taiwan
S.K. Mathis United States
David A. Browne United States
C.H. Molloy United Kingdom
M. Hansen United States
Hidetoshi Fujimoto
Citations per year, relative to Hidetoshi Fujimoto Hidetoshi Fujimoto (= 1×) peers M. Hansen

Countries citing papers authored by Hidetoshi Fujimoto

Since Specialization
Citations

This map shows the geographic impact of Hidetoshi Fujimoto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hidetoshi Fujimoto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hidetoshi Fujimoto more than expected).

Fields of papers citing papers by Hidetoshi Fujimoto

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hidetoshi Fujimoto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hidetoshi Fujimoto. The network helps show where Hidetoshi Fujimoto may publish in the future.

Co-authorship network of co-authors of Hidetoshi Fujimoto

This figure shows the co-authorship network connecting the top 25 collaborators of Hidetoshi Fujimoto. A scholar is included among the top collaborators of Hidetoshi Fujimoto based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hidetoshi Fujimoto. Hidetoshi Fujimoto is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

10 of 10 papers shown
1.
Saito, Wataru, et al.. (2012). Switching controllability of high voltage GaN-HEMTs and the cascode connection. 229–232. 4 indexed citations
2.
Saito, Wataru, et al.. (2010). Influence of electric field upon current collapse phenomena and reliability in high voltage GaN-HEMTs. 339–342. 14 indexed citations
3.
Saito, Wataru, Yorito Kakiuchi, Y. Saito, et al.. (2010). Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs. IEEE Electron Device Letters. 31(7). 659–661. 103 indexed citations
4.
Fujimoto, Hidetoshi, et al.. (2008). Wafer quality target for current-collapse-free GaN-HEMTs in high voltage applications. 2 indexed citations
5.
Nishio, Johji, Lisa Sugiura, Hidetoshi Fujimoto, Yoshihiro Kokubun, & Kazuhiko Itaya. (1997). Characterization of InGaN multiquantum well structures for blue semiconductor laser diodes. Applied Physics Letters. 70(25). 3431–3433. 26 indexed citations
6.
Itaya, Kazuhiko, Masaaki Onomura, Johji Nishio, et al.. (1996). Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates. Japanese Journal of Applied Physics. 35(10B). L1315–L1315. 190 indexed citations
7.
Nishio, Johji & Hidetoshi Fujimoto. (1994). Theoretical analysis for the segregation in the liquid encapsulated Czochralski system. Journal of Crystal Growth. 141(1-2). 249–255. 3 indexed citations
8.
Fujimoto, Hidetoshi, et al.. (1990). Direct and indirect transitions in (GaAs)m/(AlAs)5 superlattices. Surface Science. 228(1-3). 206–209. 2 indexed citations
9.
Nakazawa, Takeshi, Hidetoshi Fujimoto, Kenji Taniguchi, et al.. (1989). Photoreflectance and Photoluminescence Study of (GaAs)m/(AlAs)5(m=3-11) Superlattices: Direct and Indirect Transition. Journal of the Physical Society of Japan. 58(6). 2192–2199. 7 indexed citations
10.
Fujimoto, Hidetoshi, et al.. (1989). Crossover of Direct and Indirect Transitions in (GaAs)m/(AlAs)5Superlattices (m=1-11). Journal of the Physical Society of Japan. 58(10). 3727–3732. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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