Lei Lü

2.4k total citations
177 papers, 1.8k citations indexed

About

Lei Lü is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Lei Lü has authored 177 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 147 papers in Electrical and Electronic Engineering, 84 papers in Materials Chemistry and 27 papers in Biomedical Engineering. Recurrent topics in Lei Lü's work include Thin-Film Transistor Technologies (113 papers), ZnO doping and properties (55 papers) and Semiconductor materials and devices (54 papers). Lei Lü is often cited by papers focused on Thin-Film Transistor Technologies (113 papers), ZnO doping and properties (55 papers) and Semiconductor materials and devices (54 papers). Lei Lü collaborates with scholars based in China, Hong Kong and United States. Lei Lü's co-authors include Man Wong, Hoi Sing Kwok, Jiapeng Li, Shengdong Zhang, Zhihe Xia, Xiaoliang Zhou, Mingzhong Wu, Huan Yang, Jiye Li and Sisi Wang and has published in prestigious journals such as Journal of the American Chemical Society, Physical Review Letters and Nature Communications.

In The Last Decade

Lei Lü

162 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Lei Lü China 23 1.4k 858 281 279 249 177 1.8k
Jiebin Niu China 23 1.5k 1.1× 724 0.8× 483 1.7× 268 1.0× 344 1.4× 109 2.1k
Hailu Wang China 20 1.6k 1.2× 1.2k 1.4× 309 1.1× 210 0.8× 284 1.1× 63 2.1k
Meng Peng China 23 1.7k 1.2× 1.5k 1.7× 348 1.2× 238 0.9× 260 1.0× 37 2.3k
Hosun Lee South Korea 20 1.2k 0.9× 1.4k 1.6× 316 1.1× 214 0.8× 282 1.1× 106 1.8k
M.M. De Souza United Kingdom 22 1.6k 1.2× 834 1.0× 220 0.8× 166 0.6× 229 0.9× 141 1.9k
Yi Tong China 22 1.3k 0.9× 690 0.8× 159 0.6× 212 0.8× 157 0.6× 124 1.6k
Deyi Fu China 17 831 0.6× 1.4k 1.6× 506 1.8× 218 0.8× 363 1.5× 35 1.9k
Doo‐Hee Cho South Korea 24 1.5k 1.0× 1.1k 1.3× 297 1.1× 270 1.0× 284 1.1× 78 2.0k
J. G. Lisoni Belgium 21 1.1k 0.8× 677 0.8× 230 0.8× 141 0.5× 208 0.8× 102 1.5k
Nianduan Lu China 29 2.2k 1.6× 949 1.1× 247 0.9× 293 1.1× 559 2.2× 142 2.7k

Countries citing papers authored by Lei Lü

Since Specialization
Citations

This map shows the geographic impact of Lei Lü's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Lei Lü with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Lei Lü more than expected).

Fields of papers citing papers by Lei Lü

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Lei Lü. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Lei Lü. The network helps show where Lei Lü may publish in the future.

Co-authorship network of co-authors of Lei Lü

This figure shows the co-authorship network connecting the top 25 collaborators of Lei Lü. A scholar is included among the top collaborators of Lei Lü based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Lei Lü. Lei Lü is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Qian, Wei, Tian Xu, Songjie Yang, et al.. (2025). Stabilizing ALD Ultrathin In₂O₃ TFTs Under High Humidity Ambient by an Added IGZO Layer. IEEE Electron Device Letters. 46(5). 773–776. 2 indexed citations
2.
Pan, Jiaqi, et al.. (2024). The flexible transparent N-doped CuI/AgI pn junction towards enhanced photovoltaic conversion via interface transition of in situ iodization. Surfaces and Interfaces. 52. 104971–104971. 1 indexed citations
3.
Li, Jiye, Xiao Li, Yuqing Zhang, et al.. (2024). P‐21: Post‐Annealing Optimization for Top‐Gate Amorphous In‐Ga‐Zn‐O Thin‐Film Transistors with Atomic‐Layer‐Deposited Ultrathin AlO x Dielectric. SID Symposium Digest of Technical Papers. 55(1). 1438–1440. 1 indexed citations
4.
Zhang, Meng, et al.. (2024). Hot Carrier Degradation Reduction in Metal Oxide Thin-Film Transistors by Implementing a Lightly Doped Drain-Like Structure. IEEE Electron Device Letters. 45(9). 1602–1605. 1 indexed citations
5.
Yang, Huan, et al.. (2024). P‐1.23: High‐Performance Dual‐Gate a‐IGZO/a‐IZO Thin‐Film Transistors. SID Symposium Digest of Technical Papers. 55(S1). 698–700.
6.
Li, Jiye, Xiao Li, Xu Tian, et al.. (2024). Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination. Advanced Functional Materials. 34(28). 13 indexed citations
7.
Chen, Zhiying, Meng Zhang, Lei Lü, et al.. (2024). Reliability of indium-tin-zinc-oxide thin-film transistors under dynamic drain voltage stress. Applied Physics Letters. 125(2). 1 indexed citations
8.
Zhang, Mingjun, Jinyang Huang, Zihan Wang, et al.. (2024). Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations. IEEE Journal of the Electron Devices Society. 12. 868–874. 2 indexed citations
9.
Zhang, Yuqing, Jiye Li, Yuhan Zhang, et al.. (2023). Ultra-thin top-gate insulator of atomic-layer-deposited HfOx for amorphous InGaZnO thin-film transistors. Applied Surface Science. 625. 157177–157177. 14 indexed citations
10.
Lü, Lei, Xiaoqing Xu, Mei Zhu, et al.. (2023). The Ni2+-LaNiO3/CdS hollow core–shell heterojunction towards enhanced visible light overall water splitting H2 evolution via HER/OER synergism of Ni2+/Ov. Chemical Engineering Journal. 469. 143902–143902. 53 indexed citations
11.
Liu, Baoxing, Gui Wang, Huibo Yan, et al.. (2022). Lattice strain modulation toward efficient blue perovskite light-emitting diodes. Science Advances. 8(38). eabq0138–eabq0138. 45 indexed citations
12.
Li, Guijun, et al.. (2022). Suppression of nonideal leakage current in a-InGaZnO Schottky diode with edge termination structures. Applied Physics Letters. 121(13). 4 indexed citations
13.
Zhou, Xianda, Lei Lü, Yang Liu, et al.. (2022). Potential of the Amorphous Oxide Semiconductors for Heterogeneous Power Integration Applications. IEEE Transactions on Electron Devices. 70(1). 204–208. 4 indexed citations
14.
Li, Bin, Wei Zhong, Guijun Li, et al.. (2021). InSnZnO Thin-Film Transistors With Nitrogenous Self-Assembled Multilayers Passivation. IEEE Transactions on Electron Devices. 68(11). 5612–5617. 8 indexed citations
15.
Wang, Sisi, et al.. (2021). Fluorinated Metal-Oxide Thin-Film Transistors for Circuit Implementation on a Flexible Substrate. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 1(1). 58–63. 10 indexed citations
16.
Wang, Sisi, Jiapeng Li, Zhihe Xia, et al.. (2020). Fluorinated indium‐gallium‐zinc oxide thin‐film transistor with reduced vulnerability to hydrogen‐induced degradation. Journal of the Society for Information Display. 28(6). 520–527. 11 indexed citations
17.
Xu, Yuming, Wei Zhong, Bin Li, et al.. (2020). An Integrator and Schmitt Trigger Based Voltage-to-Frequency Converter Using Unipolar Metal-Oxide Thin Film Transistors. IEEE Journal of the Electron Devices Society. 9. 144–150. 8 indexed citations
18.
Wang, Sisi, Jiapeng Li, Lei Lü, et al.. (2020). Resilience of Fluorinated Indium-Gallium-Zinc Oxide Thin-Film Transistor Against Hydrogen-Induced Degradation. IEEE Electron Device Letters. 41(5). 729–732. 18 indexed citations
19.
Lü, Lei, Zhihe Xia, Jiapeng Li, et al.. (2017). A Comparative Study on Fluorination and Oxidation of Indium–Gallium–Zinc Oxide Thin-Film Transistors. IEEE Electron Device Letters. 39(2). 196–199. 31 indexed citations
20.
Benjebbour, Anass, et al.. (2015). B-5-63 Large Scale Experimental Trial of 5G Air Interface. 2015(1). 325. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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