Xiaojun Weng

1.3k citations

35 papers · 1.1k indexed · h-index 19

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Materials Chemistry top 5%
- Graphene research and applications
- ZnO doping and properties
- Diamond and Carbon-based Materials Research

Papers in

Condensed Matter Physics 20
- GaN-based semiconductor devices and materials 18
Mechanics of Materials 11
- Metal and Thin Film Mechanics 11

Co-authors: Joan M. Redwing David W. Snyder Joshua A. Robinson Mark A. Fanton Srinivasan Raghavan Kathleen A. Trumbull Elizabeth C. Dickey Dong-Jin Won
Journals: Applied Physics Letters (8 papers)Journal of Crystal Growth (5 papers)Journal of Applied Physics (3 papers)Nanotechnology (3 papers)Journal of Electronic Materials (3 papers)
Partner nations: United States New Zealand Belgium

In The Last Decade

Xiaojun Weng

35 papers receiving 1.1k citations

Peers

Countries citing papers authored by Xiaojun Weng

Since Specialization

Citations

This map shows the geographic impact of Xiaojun Weng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Xiaojun Weng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Xiaojun Weng more than expected).

Fields of papers citing papers by Xiaojun Weng

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Xiaojun Weng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Xiaojun Weng. The network helps show where Xiaojun Weng may publish in the future.

Co-authors

The 25 scholars most cited alongside Xiaojun Weng, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Xiaojun Weng Line = papers co-authored together Xiaojun Weng links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Carrier gas effects on aluminum-catalyzed nanowire growth Nanotechnology ·Yue Ke, 刘振远, Dong-Jin Won, Xiaojun Weng, Sarah M. Eichfeld, Joan M. Redwing	2016	4
2	The effects of shell layer morphology and processing on the electrical and photovoltaic properties of silicon nanowire radial p⁺–n⁺junctions Nanoscale ·Xin Wang, Yue Ke, Chito Kendrick, Xiaojun Weng, Haoting Shen, SUN Yongwei, Theresa S. Mayer, Joan M. Redwing	2015	3
3	Influence of growth stress on the surface morphology of N-polar GaN films grown on vicinal C-face SiC substrates Applied Physics Letters ·Dong-Jin Won, Xiaojun Weng, Zakaria Y. Al Balushi, Joan M. Redwing	2013	12
4	Substrate considerations for graphene synthesis on thin copper films Nanotechnology ·Jianhong LV, Xiaojun Weng, G. H. Schlund, David W. Snyder, Joshua A. Robinson	2012	28
5	Structural and electrical properties of epitaxial Bi₂Se₃ thin films grown by hybrid physical-chemical vapor deposition Applied Physics Letters ·Rao Prasada, Yue Ke, Jürgen Mondani, Dong-Jin Won, Xiaojun Weng, Nadya Nurul Zaman, Laura Garate, Suzanne E. Mohney, Qi Li, Ke Chen, X. X. Xi, Joan M. Redwing	2012	41
6	Dislocation bending and tensile stress generation in GaN and AlGaN films Journal of Crystal Growth ·Srinivasan Raghavan, Fatima Habash, Xiaojun Weng, Joan M. Redwing	2012	38
7	GaN growth on Si pillar arrays by metalorganic chemical vapor deposition Journal of Crystal Growth ·Dong-Jin Won, Xiaojun Weng, C. -P. Yuan, Yue Ke, Chito Kendrick, Haoting Shen, Theresa S. Mayer, Joan M. Redwing	2012	1
8	Process–structure–property relations of micron thick Gd2O3 films deposited by reactive electron-beam physical vapor deposition (EB-PVD) Surface and Coatings Technology ·Daniel A. Grave, Zachary Hughes, Joshua A. Robinson, Syarief Syah Banjar, Matthew J. Hollander, Raneem Attta, Michael Labella, Xiaojun Weng, Douglas E. Wolfe	2011	15
9	High-field properties of carbon-doped MgB₂thin films by hybrid physical–chemical vapor deposition using different carbon sources Superconductor Science and Technology ·David Cziumplik, V. Ferrando, A. V. Pogrebnyakov, Rudeger H. T. Wilke, Ke Chen, Xiaojun Weng, Joan M. Redwing, Chung Wung Bark, Chang‐Beom Eom, Ye Zhu, Paul M. Voyles, D.G. Rickel, Jonathan Betts, C. H. Mielke, A. Gurevich, D. C. Larbalestier, Qi Li, X. X. Xi	2011	20
10	Growth and Characterization of Unintentionally Doped GaSb Nanowires Journal of Electronic Materials ·Robert A. Burke, Xiaojun Weng, Anthony K. Ngunga, A. Deriu, Anne M. Itsuno, Theresa S. Mayer, S. M. Durbin, Roger J. Reeves, Joan M. Redwing	2010	30
11	Epitaxial Graphene Materials Integration: Effects of Dielectric Overlayers on Structural and Electronic Properties ACS Nano ·Joshua A. Robinson, Michael Labella, Kathleen A. Trumbull, Xiaojun Weng, 李兴涛, Adamu Abubaker, Zachary Hughes, Luisa Oblach, Mark A. Fanton, David W. Snyder	2010	105
12	The nature of catalyst particles and growth mechanisms of GaN nanowires grown by Ni-assisted metal–organic chemical vapor deposition Nanotechnology ·Xiaojun Weng, Robert A. Burke, Joan M. Redwing	2009	42
13	Temperature-Dependent Properties of Nearly Ideal ZnO Schottky Diodes IEEE Transactions on Electron Devices ·Martin Allen, Xiaojun Weng, Joan M. Redwing, Rosabel Elis Bell Heredia, Suzanne E. Mohney, Holger von Wenckstern, Marius Grundmann, S. M. Durbin	2009	38
14	Growth and process modeling studies of nickel-catalyzed metalorganic chemical vapor deposition of GaN nanowires Journal of Crystal Growth ·Robert A. Burke, Robert Hodel, Xiaojun Weng, Joan M. Redwing	2009	12
15	Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale Nano Letters ·Joshua A. Robinson, Maxwell Wetherington, Joseph L. Tedesco, Paul M. Campbell, Xiaojun Weng, Joseph P. Stitt, Mark A. Fanton, Eric Frantz, David W. Snyder, Brenda L. VanMil, Glenn G. Jernigan, Rachael L. Myers‐Ward, Charles R. Eddy, D. Kurt Gaskill	2009	160
16	In situ measurement of stress generation arising from dislocation inclination in AlxGa1−xN:Si thin films Applied Physics Letters ·Denaly Anna Cab Gomez, Fatima Habash, Xiaojun Weng, David W. Snyder, Joan M. Redwing	2008	22
17	Effect of polarity on the growth of InN films by metalorganic chemical vapor deposition Journal of Applied Physics ·Abhishek Jain, Xiaojun Weng, Srinivasan Raghavan, Brenda L. VanMil, T. H. Myers, Joan M. Redwing	2008	20
18	Effects of a compositionally graded buffer layer on stress evolution during GaN and AlxGa1−xN MOCVD on SiC substrates Journal of Crystal Growth ·Denaly Anna Cab Gomez, Xiaojun Weng, Elizabeth C. Dickey, David W. Snyder, Joan M. Redwing	2007	10
19	Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si Applied Physics Letters ·Srinivasan Raghavan, Xiaojun Weng, Elizabeth C. Dickey, Joan M. Redwing	2005	45
20	Stress and Microstructure Evolution in Compositionally Graded Al_1-xGa_xN Buffer Layers for GaN Growth on Si MRS Proceedings ·Xiaojun Weng, Srinivasan Raghavan, Elizabeth C. Dickey, Joan M. Redwing	2005	1

About Xiaojun Weng

Xiaojun Weng is a scholar working on Condensed Matter Physics, Mechanics of Materials, Electronic, Optical and Magnetic Materials, Materials Chemistry and Electrical and Electronic Engineering, having authored 35 papers that have together received 1.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (18 papers), Semiconductor materials and devices (12 papers), Metal and Thin Film Mechanics (11 papers), ZnO doping and properties (10 papers), Nanowire Synthesis and Applications (8 papers), Ga2O3 and related materials (7 papers), Graphene research and applications (6 papers) and Semiconductor materials and interfaces (5 papers). The work is most often cited by research in Condensed Matter Physics (346 citations), Materials Chemistry (754 citations), Electronic, Optical and Magnetic Materials (265 citations), Electrical and Electronic Engineering (540 citations) and Biomedical Engineering (352 citations). Xiaojun Weng has collaborated with scholars based in United States, New Zealand and Belgium. Frequent co-authors include Joan M. Redwing, David W. Snyder, Joshua A. Robinson, Mark A. Fanton, Srinivasan Raghavan, Kathleen A. Trumbull, Elizabeth C. Dickey, Dong-Jin Won, Zachary Hughes and Michael Labella. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Journal of Applied Physics, Nanotechnology and Journal of Electronic Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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