Wangran Wu

702 total citations
66 papers, 529 citations indexed

About

Wangran Wu is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, Wangran Wu has authored 66 papers receiving a total of 529 indexed citations (citations by other indexed papers that have themselves been cited), including 64 papers in Electrical and Electronic Engineering, 11 papers in Biomedical Engineering and 8 papers in Materials Chemistry. Recurrent topics in Wangran Wu's work include Advancements in Semiconductor Devices and Circuit Design (41 papers), Semiconductor materials and devices (40 papers) and Silicon Carbide Semiconductor Technologies (20 papers). Wangran Wu is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (41 papers), Semiconductor materials and devices (40 papers) and Silicon Carbide Semiconductor Technologies (20 papers). Wangran Wu collaborates with scholars based in China, United States and Germany. Wangran Wu's co-authors include Peide D. Ye, Yuchen Du, Xianfan Xu, Zhe Luo, Jesse Maassen, Weifeng Sun, Mengwei Si, Heng Wu, Siyang Liu and Yi Zhao and has published in prestigious journals such as Nano Letters, Applied Physics Letters and IEEE Transactions on Power Electronics.

In The Last Decade

Wangran Wu

58 papers receiving 511 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Wangran Wu China 10 368 220 94 37 35 66 529
Sung‐Jae Joo South Korea 12 204 0.6× 249 1.1× 43 0.5× 30 0.8× 51 1.5× 43 377
S. Barnola France 15 467 1.3× 238 1.1× 149 1.6× 13 0.4× 27 0.8× 49 530
Ming-ta Hsieh United States 9 475 1.3× 174 0.8× 87 0.9× 14 0.4× 104 3.0× 23 529
Yuan-Xiang Deng China 15 191 0.5× 490 2.2× 55 0.6× 21 0.6× 82 2.3× 38 584
Chih Hang Tung Singapore 7 473 1.3× 138 0.6× 43 0.5× 14 0.4× 71 2.0× 14 517
Pyung Moon South Korea 8 338 0.9× 266 1.2× 49 0.5× 16 0.4× 17 0.5× 18 417
Pavel Dutta United States 12 278 0.8× 130 0.6× 147 1.6× 9 0.2× 68 1.9× 38 351
Alexandria Will‐Cole United States 9 132 0.4× 189 0.9× 112 1.2× 11 0.3× 49 1.4× 15 315
Michael Belyansky United States 12 191 0.5× 101 0.5× 52 0.6× 35 0.9× 30 0.9× 29 262
A. Smirnov Belarus 10 251 0.7× 206 0.9× 117 1.2× 12 0.3× 58 1.7× 48 346

Countries citing papers authored by Wangran Wu

Since Specialization
Citations

This map shows the geographic impact of Wangran Wu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wangran Wu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wangran Wu more than expected).

Fields of papers citing papers by Wangran Wu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wangran Wu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wangran Wu. The network helps show where Wangran Wu may publish in the future.

Co-authorship network of co-authors of Wangran Wu

This figure shows the co-authorship network connecting the top 25 collaborators of Wangran Wu. A scholar is included among the top collaborators of Wangran Wu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Wangran Wu. Wangran Wu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Zhu, Hong, Hao Wu, Tianzhen Li, et al.. (2025). Experimental Investigation on the Electrical Properties of a-InGaZnO Thin-Film Transistors Under Total Dose Ionizing Radiation. IEEE Electron Device Letters. 46(3). 440–443. 1 indexed citations
3.
Cao, Jie, et al.. (2025). Positive bias stress reliability of InSnO TFTs: Analysis and Improvement strategies. Applied Surface Science. 697. 163061–163061. 3 indexed citations
4.
Chen, Mingyang, Yujun Fu, Wangran Wu, et al.. (2025). TMSCl‐Mediated Carbocyclization‐Phosphorothiolation of Alkynes to Access Phosphorothiolated Phenanthrene and 2 H ‐Chromene Derivatives. Advanced Synthesis & Catalysis. 368(2).
5.
Wu, Wangran, et al.. (2024). High-Voltage Indium-Tin-Oxide Thin-Film Transistors Possessing Drift Region Capped With Indium-Tin-Oxide Layer. IEEE Electron Device Letters. 45(7). 1201–1204. 5 indexed citations
6.
Cao, Jie, et al.. (2024). High-Voltage Amorphous InGaZnO Thin-Film Transistors With ITO-Modulated Offset Region. IEEE Transactions on Electron Devices. 71(5). 2990–2994. 6 indexed citations
7.
Wu, Wangran, et al.. (2024). A 1.25-V Power Source Based on Solid-State Battery and Low Dropout Regulator Integrated With E-Mode a-IGZO and D-Mode ITO Thin-Film Transistors. IEEE Transactions on Electron Devices. 71(12). 7551–7556. 1 indexed citations
8.
Yu, Fan, et al.. (2024). A Low-Dropout Regulator Integrated With E-mode IGZO and D-mode ITO/IGZO Dual Layer Thin Film Transistors With Superior Uniformity and Stability. IEEE Electron Device Letters. 45(11). 2134–2137. 1 indexed citations
9.
Wu, Wangran, et al.. (2023). Improved reliability of a-IGZO thin-film transistor under positive gate bias stress by utilizing NH3 plasma treatment. Microelectronics Reliability. 151. 115257–115257. 5 indexed citations
10.
Wu, Wangran, Jing Yang, Qi Liu, et al.. (2022). Study of the single-event burnout triggering criteria and hardening of the 550 V SOI lateral-IGBT. Microelectronics Reliability. 130. 114489–114489. 1 indexed citations
11.
12.
Liu, Siyang, Li Lu, Ran Ye, et al.. (2020). Hot-Carrier-Induced Degradation and Optimization for 700-V High-Voltage Lateral DMOS by the AC Stress. IEEE Transactions on Electron Devices. 67(3). 1090–1097. 5 indexed citations
13.
Wu, Wangran, Jing Yang, Siyang Liu, et al.. (2020). Experimental Investigation on the Electrical Properties of SOI-LIGBT Under Total-Ionizing-Dose Radiation. 431–434. 3 indexed citations
14.
Wu, Wangran, Xingyao Zhang, Jing Yang, et al.. (2020). Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT. Solid-State Electronics. 175. 107952–107952. 1 indexed citations
15.
Zhang, Chi, Sheng Li, Siyang Liu, et al.. (2019). Electrical Degradations of p-GaN HEMT under High Off-state Bias Stress with Negative Gate Voltage. 1–4. 5 indexed citations
16.
Liu, Siyang, Zhichao Li, Wangran Wu, et al.. (2018). Duty-cycle-accelerated hot-carrier degradation and lifetime evaluation for 700V lateral DMOS. 319–322. 3 indexed citations
17.
Si, Mengwei, Heng Wu, SangHoon Shin, et al.. (2017). Anomalous bias temperature instability on accumulation-mode Ge and III-V MOSFETs. 479. 6A–5.1. 1 indexed citations
18.
Wu, Wangran, et al.. (2014). Comprehensive study of NBTI under compressive and tensile strain. 30. XT.11.1–XT.11.4.
19.
Sun, Jiabao, et al.. (2013). Equivalent oxide thickness scaling of Al2O3/Ge metal—oxide—semiconductor capacitors with ozone post oxidation. Chinese Physics B. 22(6). 67701–67701. 12 indexed citations
20.
Wu, Wangran, Yu Pu, Jiabao Sun, et al.. (2012). Mechanical tensile strain induced gate and substrate currents change in n and p-channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters. 101(5). 53507–53507. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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