Walter E. Henderson
Impact in
- Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
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- Ga2O3 and related materials
Papers in
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- GaN-based semiconductor devices and materials 16
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- Ga2O3 and related materials 9
- Co-authors
- William Alan Doolittle (22 shared papers)Gon Namkoong (7 shared papers)Shawn D. Burnham (6 shared papers)Mayar Allam (2 shared papers)Ahmet F. Coskun (2 shared papers)Shuangyi Cai (2 shared papers)Thomas Hu (2 shared papers)Michael W. Moseley (3 shared papers)
- Journals
- Journal of Crystal Growth (7 papers)IEEE Transactions on Nanotechnology (2 papers)Applied Physics Letters (1 paper)Solid-State Electronics (1 paper)Semiconductor Science and Technology (1 paper)
- Partner nations
- United StatesChinaUnited Kingdom
In The Last Decade
Walter E. Henderson
33 papers receiving 557 citations
Peers
Comparison fields: 5 of 59
- Condensed Matter Physics 231
- Electronic, Optical and Magnetic Materials 140
- Materials Chemistry 204
- Atomic and Molecular Physics, and Optics 133
- Electrical and Electronic Engineering 207
Countries citing papers authored by Walter E. Henderson
This map shows the geographic impact of Walter E. Henderson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Walter E. Henderson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Walter E. Henderson more than expected).
Fields of papers citing papers by Walter E. Henderson
This network shows the impact of papers produced by Walter E. Henderson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Walter E. Henderson. The network helps show where Walter E. Henderson may publish in the future.
Co-authors
The 25 scholars most cited alongside Walter E. Henderson, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
Showing the 20 most-cited of 34 papers — load more, or switch the sort, to bring in the rest.
| # | Work | ||
|---|---|---|---|
| 1 | 2023 | 102 | |
| 2 | 2006 | 74 | |
| 3 | 2009 | 45 | |
| 4 | 2021 | 42 | |
| 5 | 2005 | 35 | |
| 6 | 2018 | 30 | |
| 7 | 2005 | 29 | |
| 8 | 2009 | 28 | |
| 9 | 2011 | 23 | |
| 10 | 2008 | 20 | |
| 11 | 2011 | 19 | |
| 12 | 2001 | 15 | |
| 13 | 2005 | 15 | |
| 14 | 2009 | 14 | |
| 15 | 1982 | 13 | |
| 16 | 2005 | 12 | |
| 17 | 2002 | 10 | |
| 18 | 2006 | 6 | |
| 19 | 2015 | 6 | |
| 20 | 2003 | 5 |
About Walter E. Henderson
Walter E. Henderson is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry, having authored 34 papers that have together received 572 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (16 papers), Semiconductor materials and devices (12 papers), Ga2O3 and related materials (9 papers), Semiconductor Quantum Structures and Devices (7 papers), ZnO doping and properties (6 papers), Photorefractive and Nonlinear Optics (4 papers), Ferroelectric and Piezoelectric Materials (3 papers) and High voltage insulation and dielectric phenomena (2 papers). The work is most often cited by research in Condensed Matter Physics (231 citations), Electronic, Optical and Magnetic Materials (140 citations), Materials Chemistry (204 citations), Atomic and Molecular Physics, and Optics (133 citations) and Electrical and Electronic Engineering (207 citations). Walter E. Henderson has collaborated with scholars based in United States, China and United Kingdom. Frequent co-authors include William Alan Doolittle, Gon Namkoong, Shawn D. Burnham, Mayar Allam, Ahmet F. Coskun, Shuangyi Cai, Thomas Hu, Michael W. Moseley, Alexander N. Cartwright and Maurice C.-K. Cheung. Their work appears in journals such as Journal of Crystal Growth, IEEE Transactions on Nanotechnology, Applied Physics Letters, Solid-State Electronics and Semiconductor Science and Technology.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.