L. F. Luo

828 total citations
22 papers, 665 citations indexed

About

L. F. Luo is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, L. F. Luo has authored 22 papers receiving a total of 665 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Atomic and Molecular Physics, and Optics, 21 papers in Electrical and Electronic Engineering and 2 papers in Biomedical Engineering. Recurrent topics in L. F. Luo's work include Semiconductor Quantum Structures and Devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Advanced Semiconductor Detectors and Materials (12 papers). L. F. Luo is often cited by papers focused on Semiconductor Quantum Structures and Devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Advanced Semiconductor Detectors and Materials (12 papers). L. F. Luo collaborates with scholars based in United States and Taiwan. L. F. Luo's co-authors include R. Beresford, K. F. Longenbach, W. I. Wang, E. E. Méndez, H. L. Evans, W.I. Wang, E.S. Yang, H. Munekata, Xiaoxi Wu and Edward S. Yang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and The Journal of Physical Chemistry C.

In The Last Decade

L. F. Luo

20 papers receiving 644 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. F. Luo United States 15 597 576 66 46 43 22 665
R. P. Bryan United States 12 334 0.6× 459 0.8× 43 0.7× 19 0.4× 24 0.6× 54 492
M. Thomas United States 12 369 0.6× 172 0.3× 60 0.9× 47 1.0× 111 2.6× 23 386
S.D. Benjamin Canada 11 292 0.5× 380 0.7× 69 1.0× 40 0.9× 22 0.5× 28 438
Hao-Tien Cheng Taiwan 12 347 0.6× 481 0.8× 69 1.0× 65 1.4× 45 1.0× 52 558
W. Schlapp Germany 13 368 0.6× 303 0.5× 115 1.7× 40 0.9× 68 1.6× 36 473
Ya. V. Terent’ev Russia 12 385 0.6× 332 0.6× 125 1.9× 26 0.6× 26 0.6× 52 420
Yoshiyasu Ueno Japan 13 322 0.5× 504 0.9× 43 0.7× 27 0.6× 27 0.6× 40 556
Bart J. Van Zeghbroeck United States 10 211 0.4× 304 0.5× 35 0.5× 53 1.2× 70 1.6× 21 348
John P. Loehr United States 14 429 0.7× 395 0.7× 68 1.0× 21 0.5× 53 1.2× 48 510
R. L. S. Devine Canada 11 277 0.5× 205 0.4× 76 1.2× 33 0.7× 23 0.5× 18 321

Countries citing papers authored by L. F. Luo

Since Specialization
Citations

This map shows the geographic impact of L. F. Luo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. F. Luo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. F. Luo more than expected).

Fields of papers citing papers by L. F. Luo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. F. Luo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. F. Luo. The network helps show where L. F. Luo may publish in the future.

Co-authorship network of co-authors of L. F. Luo

This figure shows the co-authorship network connecting the top 25 collaborators of L. F. Luo. A scholar is included among the top collaborators of L. F. Luo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. F. Luo. L. F. Luo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
He, Zhubing, Wenjun Zhang, Wenfeng Zhang, et al.. (2010). High-Performance CdSe:In Nanowire Field-Effect Transistors Based on Top-Gate Configuration with High-κ Non-Oxide Dielectrics. The Journal of Physical Chemistry C. 114(10). 4663–4668. 20 indexed citations
3.
Luo, L. F., K. F. Longenbach, & W.I. Wang. (2002). High performance GaSb p-channel MODFETs. iia 3. 515–518.
4.
Longenbach, K. F., L. F. Luo, Sixu Xin, & W.I. Wang. (1991). Resonant tunneling in polytype InAs/AlSb/GaSb heterostructures. Journal of Crystal Growth. 111(1-4). 651–658. 10 indexed citations
5.
Beresford, R., et al.. (1990). Interband tunneling in single-barrier InAs/AlSb/GaSb heterostructures. Applied Physics Letters. 56(10). 952–954. 33 indexed citations
6.
Luo, L. F., K. F. Longenbach, & W.I. Wang. (1990). p-channel modulation-doped field-effect transistors based on AlSb/sub 0.9/As/sub 0.1//GaSb. IEEE Electron Device Letters. 11(12). 567–569. 21 indexed citations
7.
Beresford, R., et al.. (1990). Resonant interband tunneling through a 110 nm InAs quantum well. Applied Physics Letters. 56(6). 551–553. 21 indexed citations
8.
Beresford, R., et al.. (1990). Narrow-gap InAs for heterostructure tunnelling. Semiconductor Science and Technology. 5(3S). S195–S199. 9 indexed citations
9.
Luo, L. F., K. F. Longenbach, & W.I. Wang. (1990). Kink-free AlInAs/GaInAs/InP HEMTs grown by molecular beam epitaxy. Electronics Letters. 26(12). 779–780. 4 indexed citations
10.
Longenbach, K. F., et al.. (1990). Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructures. Applied Physics Letters. 57(15). 1554–1556. 42 indexed citations
11.
Beresford, R., et al.. (1990). Resonant interband tunneling device with multiple negative differential resistance regions. IEEE Electron Device Letters. 11(3). 110–112. 13 indexed citations
12.
Wu, Xiaoxi, et al.. (1990). An AlGaAs/GaAs heterostructure-emitter bipolar transistor. IEEE Electron Device Letters. 11(6). 264–266. 34 indexed citations
13.
Luo, L. F., et al.. (1990). Resonant interband coupling in single-barrier heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb. Journal of Applied Physics. 68(6). 2854–2857. 35 indexed citations
14.
Luo, L. F., et al.. (1989). Interband tunneling in polytype GaSb/AlSb/InAs heterostructures. Applied Physics Letters. 55(19). 2023–2025. 135 indexed citations
15.
Luo, L. F., R. Beresford, W. I. Wang, & H. Munekata. (1989). Heterojunction field-effect transistors based on AlGaSb/InAs. Applied Physics Letters. 55(8). 789–791. 46 indexed citations
16.
Luo, L. F., H. L. Evans, & E.S. Yang. (1989). A heterojunction bipolar transistor with separate carrier injection and confinement. IEEE Transactions on Electron Devices. 36(9). 1844–1846. 41 indexed citations
17.
Beresford, R., et al.. (1989). Resonant tunneling of holes in AlSb/GaSb/AlSb double-barrier heterostructures. Applied Physics Letters. 55(7). 694–695. 22 indexed citations
18.
Beresford, R., L. F. Luo, W. I. Wang, & E. E. Méndez. (1989). Resonant tunneling through X-valley states in GaAs/AlAs/GaAs single-barrier heterostructures. Applied Physics Letters. 55(15). 1555–1557. 32 indexed citations
19.
Luo, L. F., R. Beresford, W. I. Wang, & E. E. Méndez. (1989). Inelastic tunneling in (111) oriented AlAs/GaAs/AlAs double-barrier heterostructures. Applied Physics Letters. 54(21). 2133–2135. 23 indexed citations
20.
Luo, L. F., et al.. (1988). Resonant tunneling in AlSb/InAs/AlSb double-barrier heterostructures. Applied Physics Letters. 53(23). 2320–2322. 73 indexed citations

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