V. Eu

402 total citations
24 papers, 331 citations indexed

About

V. Eu is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, V. Eu has authored 24 papers receiving a total of 331 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 20 papers in Atomic and Molecular Physics, and Optics and 5 papers in Condensed Matter Physics. Recurrent topics in V. Eu's work include Semiconductor materials and devices (21 papers), Semiconductor Quantum Structures and Devices (13 papers) and Semiconductor materials and interfaces (9 papers). V. Eu is often cited by papers focused on Semiconductor materials and devices (21 papers), Semiconductor Quantum Structures and Devices (13 papers) and Semiconductor materials and interfaces (9 papers). V. Eu collaborates with scholars based in United States. V. Eu's co-authors include M. Feng, Minfu Feng, Z.H. Lu, P. D. Wright, A. Majerfeld, Ling Yang, C.L. Lau, C. Ito, L. J. Guido and J. M. Whelan and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

V. Eu

24 papers receiving 310 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Eu United States 11 304 219 48 31 25 24 331
E. Wolak United States 10 322 1.1× 261 1.2× 14 0.3× 12 0.4× 15 0.6× 25 369
G. Lindemann Austria 8 97 0.3× 250 1.1× 112 2.3× 12 0.4× 35 1.4× 8 296
M. Keever United States 13 414 1.4× 370 1.7× 26 0.5× 12 0.4× 50 2.0× 25 476
S. A. Maranowski United States 10 374 1.2× 289 1.3× 18 0.4× 6 0.2× 31 1.2× 23 388
R.D. Yadvish United States 11 309 1.0× 219 1.0× 18 0.4× 14 0.5× 18 0.7× 26 320
K. F. Longenbach United States 12 312 1.0× 316 1.4× 23 0.5× 6 0.2× 31 1.2× 23 350
H. Horikawa Japan 11 333 1.1× 284 1.3× 12 0.3× 12 0.4× 23 0.9× 44 350
B. Garrett United Kingdom 10 309 1.0× 250 1.1× 17 0.4× 9 0.3× 11 0.4× 22 325
R. B. Wilson United States 8 276 0.9× 259 1.2× 13 0.3× 9 0.3× 29 1.2× 18 314
O. Sjölund United States 10 284 0.9× 175 0.8× 12 0.3× 8 0.3× 25 1.0× 32 351

Countries citing papers authored by V. Eu

Since Specialization
Citations

This map shows the geographic impact of V. Eu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Eu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Eu more than expected).

Fields of papers citing papers by V. Eu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Eu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Eu. The network helps show where V. Eu may publish in the future.

Co-authorship network of co-authors of V. Eu

This figure shows the co-authorship network connecting the top 25 collaborators of V. Eu. A scholar is included among the top collaborators of V. Eu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Eu. V. Eu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yang, Ling, P. D. Wright, V. Eu, Z.H. Lu, & A. Majerfeld. (1992). Heavily doped p-GaAs grown by low-pressure organometallic vapor phase epitaxy using liquid CCl4. Journal of Applied Physics. 72(5). 2063–2065. 68 indexed citations
2.
Feng, M., C.L. Lau, & V. Eu. (1991). An experimental determination of electron drift velocity in 0.5- mu m gate-length ion-implanted GaAs MESFET's. IEEE Electron Device Letters. 12(2). 40–41. 5 indexed citations
3.
Feng, M., C.L. Lau, V. Eu, & C. Ito. (1990). Does the two-dimensional electron gas effect contribute to high-frequency and high-speed performance of field-effect transistors?. Applied Physics Letters. 57(12). 1233–1235. 29 indexed citations
4.
Guido, L. J., K. C. Hsieh, N. Holonyak, et al.. (1987). Impurity induced layer disordering of Si implanted AlxGa1−xAs-GaAs quantum-well heterostructures: Layer disordering via diffusion from extrinsic dislocation loops. Journal of Applied Physics. 61(4). 1329–1334. 21 indexed citations
5.
Gavrilovič, P., Kathleen Meehan, L. J. Guido, et al.. (1985). Si-implanted and disordered stripe-geometry AlxGa1−xAs-GaAs quantum well lasers. Applied Physics Letters. 47(9). 903–905. 23 indexed citations
6.
Feng, Minfu, et al.. (1984). Optimization of ion-implanted low noise GaAs metal-semiconductor field effect transistors. Journal of Applied Physics. 56(4). 1171–1176. 5 indexed citations
7.
Feng, Minfu, et al.. (1984). Ultrahigh frequency operation of ion-implanted GaAs metal-semiconductor field-effect transistors. Applied Physics Letters. 44(2). 231–233. 34 indexed citations
8.
Feng, Ming, et al.. (1984). GaAs MESFET's made by ion implantation into MOCVD Buffer layers. IEEE Electron Device Letters. 5(1). 18–20. 8 indexed citations
9.
Feng, M., et al.. (1984). A low-noise GaAs MESFET made with graded-channel doping profiles. IEEE Electron Device Letters. 5(3). 85–87. 4 indexed citations
10.
Feng, M., et al.. (1983). CHARACTERIZATION OF ION IMPLANTED GaAs SUPER LOW NOISE FIELD EFFECT TRANSISTOR.. 325–332. 1 indexed citations
11.
Feng, Minfu, V. Eu, I. J. D’Haenens, & M. Braunstein. (1982). Low-noise GaAs field-effect transistor made by molecular beam epitaxy. Applied Physics Letters. 41(7). 633–635. 4 indexed citations
12.
Feng, Minfu, et al.. (1982). High-efficiency GaAs power MESFETs prepared by ion implantation. Electronics Letters. 18(25-26). 1097–1099. 10 indexed citations
13.
Feng, M., et al.. (1982). High performance ion-implanted low noise GaAs MESFET's. IEEE Electron Device Letters. 3(11). 327–329. 7 indexed citations
14.
Feng, M., et al.. (1982). Low noise GaAs metal-semiconductor field-effect transistor made by ion implantation. Applied Physics Letters. 40(9). 802–804. 12 indexed citations
15.
Feng, M., et al.. (1982). Correlation between chemical and electrical profiles in Si+, Se+ and S+ implanted bulk and epitaxial GaAs. Journal of Electronic Materials. 11(6). 1083–1114. 9 indexed citations
16.
Eu, V., et al.. (1982). Multilevel Si doping in GaAs using a single AsCl3:SiCl4 doping source. Journal of Applied Physics. 53(2). 1266–1268. 1 indexed citations
17.
Feng, M., et al.. (1981). Si-doped GaAs by SiCl4-AsCl3 liquid solution in AsCl3/GaAs-Ga/H2 chemical vapor deposition system. Applied Physics Letters. 38(9). 688–690. 2 indexed citations
18.
Feng, M., et al.. (1981). Study of cr, si and mn distribution in semi-insulating gaas after annealing with and without SiO2 in an H2-AS4 atmosphere. Journal of Electronic Materials. 10(6). 973–986. 11 indexed citations
19.
Feng, M., et al.. (1981). Study of electrical and chemical profiles of Si implanted in semi-insulating GaAs substrate annealed under SiO2 and capless. Journal of Applied Physics. 52(4). 2990–2993. 19 indexed citations
20.
Eu, V., et al.. (1980). Cr profiles in semi-insulating GaAs after annealing with and without SiO2 encapsulants in a H2-As4 atmosphere. Applied Physics Letters. 37(5). 473–475. 26 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by E. Wolak Breakdown of academic impact, for papers by G. Lindemann Breakdown of academic impact, for papers by M. Keever Breakdown of academic impact, for papers by S. A. Maranowski Breakdown of academic impact, for papers by R.D. Yadvish Breakdown of academic impact, for papers by K. F. Longenbach Breakdown of academic impact, for papers by H. Horikawa Breakdown of academic impact, for papers by B. Garrett Breakdown of academic impact, for papers by R. B. Wilson Breakdown of academic impact, for papers by O. Sjölund
Rankless by CCL
2026