V. Eu

402 citations

24 papers · 331 indexed · h-index 11

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 13
- Semiconductor materials and interfaces 9
Electrical and Electronic Engineering
- Semiconductor materials and devices 21
- Advancements in Semiconductor Devices and Circuit Design 7
- Radio Frequency Integrated Circuit Design 4
- Semiconductor Lasers and Optical Devices 2
- 3D IC and TSV technologies 2
Condensed Matter Physics
- GaN-based semiconductor devices and materials 5
Computational Mechanics
Internal Medicine

Co-authors: M. Feng Minfu Feng Ling Yang P. D. Wright A. Majerfeld Z.H. Lu C.L. Lau C. Ito
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Condensed Matter Physics
Journals: Applied Physics Letters (8 papers)Journal of Applied Physics (5 papers)IEEE Electron Device Letters (4 papers)
Partner nations: United States

In The Last Decade

V. Eu

24 papers receiving 310 citations

Peers

Countries citing papers authored by V. Eu

Since Specialization

Citations

This map shows the geographic impact of V. Eu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Eu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Eu more than expected).

Fields of papers citing papers by V. Eu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Eu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Eu. The network helps show where V. Eu may publish in the future.

Co-authorship network

The 24 scholars most cited alongside V. Eu, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V. Eu Line = papers co-authored together V. Eu links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Heavily doped p-GaAs grown by low-pressure organometallic vapor phase epitaxy using liquid CCl4 Journal of Applied Physics ·Ling Yang,P. D. Wright,V. Eu,Z.H. Lu,A. Majerfeld	1992	68
2	An experimental determination of electron drift velocity in 0.5- mu m gate-length ion-implanted GaAs MESFET's IEEE Electron Device Letters ·M. Feng,C.L. Lau,V. Eu	1991	5
3	Does the two-dimensional electron gas effect contribute to high-frequency and high-speed performance of field-effect transistors? Applied Physics Letters ·M. Feng,C.L. Lau,V. Eu,C. Ito	1990	29
4	Impurity induced layer disordering of Si implanted AlxGa1−xAs-GaAs quantum-well heterostructures: Layer disordering via diffusion from extrinsic dislocation loops Journal of Applied Physics ·L. J. Guido,K. C. Hsieh,N. Holonyak,R. W. Kaliski,V. Eu,M. Feng,R. D. Burnham	1987	21
5	Si-implanted and disordered stripe-geometry AlxGa1−xAs-GaAs quantum well lasers Applied Physics Letters ·P. Gavrilovič,Kathleen Meehan,L. J. Guido,N. Holonyak,V. Eu,M. Feng,R. D. Burnham	1985	23
6	Optimization of ion-implanted low noise GaAs metal-semiconductor field effect transistors Journal of Applied Physics ·Minfu Feng,V. Eu,Aguirre Diana	1984	5
7	Ultrahigh frequency operation of ion-implanted GaAs metal-semiconductor field-effect transistors Applied Physics Letters ·Minfu Feng,Aguirre Diana,V. Eu,Marwan Touma,Т.А. Маслова	1984	34
8	A low-noise GaAs MESFET made with graded-channel doping profiles IEEE Electron Device Letters ·M. Feng,V. Eu,Mohamed Elmaadawy,Adolf Th. Schweizer	1984	4
9	GaAs MESFET's made by ion implantation into MOCVD Buffer layers IEEE Electron Device Letters ·Ming Feng,V. Eu,Adolf Th. Schweizer,Aguirre Diana,Ж./J. Ничев/Nichev	1984	8
10	CHARACTERIZATION OF ION IMPLANTED GaAs SUPER LOW NOISE FIELD EFFECT TRANSISTOR. M. Feng,Aguirre Diana,V. Eu,Sakiyem Sakiyem Sakiyem	1983	1
11	High-efficiency GaAs power MESFETs prepared by ion implantation Electronics Letters ·Minfu Feng,Aguirre Diana,V. Eu,Liu Kunyu	1982	10
12	Low-noise GaAs field-effect transistor made by molecular beam epitaxy Applied Physics Letters ·Minfu Feng,V. Eu,I. J. D’Haenens,M. Braunstein	1982	4
13	Correlation between chemical and electrical profiles in Si+, Se+ and S+ implanted bulk and epitaxial GaAs Journal of Electronic Materials ·Aguirre Diana,M. Feng,V. Eu,Susan Bailey,Ж./J. Ничев/Nichev	1982	9
14	High performance ion-implanted low noise GaAs MESFET's IEEE Electron Device Letters ·M. Feng,V. Eu,Aguirre Diana,Du Wei	1982	7
15	Growth and characterization of Si doped vapor phase epitaxial GaAs for mesfet Journal of Electronic Materials ·M. Feng,V. Eu,Adolf Th. Schweizer,J. M. Whelan	1982	2
16	Silicon implanted super low-noise GaAs MESFET Electronics Letters ·Minfu Feng,V. Eu,Liu Kunyu,Marwan Touma,Hiroshi Kimura,Harvey Winston	1982	21
17	Si-doped GaAs by SiCl4-AsCl3 liquid solution in AsCl3/GaAs-Ga/H2 chemical vapor deposition system Applied Physics Letters ·M. Feng,V. Eu,Adolf Th. Schweizer,A. Etlin,J. M. Whelan	1981	2
18	Study of electrical and chemical profiles of Si implanted in semi-insulating GaAs substrate annealed under SiO2 and capless Journal of Applied Physics ·M. Feng,C. Gallenga,V. Eu,G. H. Berkeley	1981	19
19	Study of cr, si and mn distribution in semi-insulating gaas after annealing with and without SiO2 in an H2-AS4 atmosphere Journal of Electronic Materials ·M. Feng,V. Eu,Aguirre Diana,Ж./J. Ничев/Nichev	1981	11
20	Cr profiles in semi-insulating GaAs after annealing with and without SiO2 encapsulants in a H2-As4 atmosphere Applied Physics Letters ·V. Eu,M. Feng,Ж./J. Ничев/Nichev,A. Etlin,J. M. Whelan	1980	26

About V. Eu

V. Eu is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Electrical and Electronic Engineering, having authored 24 papers that have together received 331 indexed citations. Recurring topics across this work include Semiconductor materials and devices (21 papers), Semiconductor Quantum Structures and Devices (13 papers), Semiconductor materials and interfaces (9 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers), GaN-based semiconductor devices and materials (5 papers), Radio Frequency Integrated Circuit Design (4 papers), Semiconductor Lasers and Optical Devices (2 papers) and 3D IC and TSV technologies (2 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (219 citations), Electrical and Electronic Engineering (304 citations) and Condensed Matter Physics (48 citations). V. Eu has collaborated with scholars based in United States. Frequent co-authors include M. Feng, Minfu Feng, Ling Yang, P. D. Wright, A. Majerfeld, Z.H. Lu, C.L. Lau, C. Ito, N. Holonyak and L. J. Guido. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, IEEE Electron Device Letters, Journal of Electronic Materials and Electronics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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