K. F. Longenbach

448 total citations
23 papers, 350 citations indexed

About

K. F. Longenbach is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Spectroscopy. According to data from OpenAlex, K. F. Longenbach has authored 23 papers receiving a total of 350 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Atomic and Molecular Physics, and Optics, 22 papers in Electrical and Electronic Engineering and 2 papers in Spectroscopy. Recurrent topics in K. F. Longenbach's work include Semiconductor Quantum Structures and Devices (22 papers), Advanced Semiconductor Detectors and Materials (11 papers) and Advancements in Semiconductor Devices and Circuit Design (9 papers). K. F. Longenbach is often cited by papers focused on Semiconductor Quantum Structures and Devices (22 papers), Advanced Semiconductor Detectors and Materials (11 papers) and Advancements in Semiconductor Devices and Circuit Design (9 papers). K. F. Longenbach collaborates with scholars based in United States. K. F. Longenbach's co-authors include L. F. Luo, R. Beresford, W.I. Wang, Sixu Xin, E.S. Yang, F Guarin and Yifan Jiang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

K. F. Longenbach

21 papers receiving 336 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. F. Longenbach United States 12 316 312 31 25 23 23 350
T. Uji Japan 11 224 0.7× 309 1.0× 32 1.0× 17 0.7× 22 1.0× 36 326
J.L. Gentner Germany 13 258 0.8× 275 0.9× 35 1.1× 37 1.5× 17 0.7× 39 351
R.J. Capik United States 11 274 0.9× 362 1.2× 38 1.2× 42 1.7× 14 0.6× 24 412
R. Kapre United States 13 242 0.8× 351 1.1× 61 2.0× 28 1.1× 31 1.3× 40 397
S. Slempkès France 14 267 0.8× 445 1.4× 63 2.0× 31 1.2× 14 0.6× 45 495
R. Sidhu United States 10 269 0.9× 343 1.1× 31 1.0× 40 1.6× 23 1.0× 29 374
T. Kawano Japan 11 262 0.8× 363 1.2× 26 0.8× 11 0.4× 16 0.7× 21 381
A. Takai Japan 10 299 0.9× 545 1.7× 28 0.9× 13 0.5× 12 0.5× 27 558
R. B. Wilson United States 8 259 0.8× 276 0.9× 29 0.9× 15 0.6× 13 0.6× 18 314
T. Sanada Japan 12 292 0.9× 362 1.2× 26 0.8× 12 0.5× 28 1.2× 29 388

Countries citing papers authored by K. F. Longenbach

Since Specialization
Citations

This map shows the geographic impact of K. F. Longenbach's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. F. Longenbach with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. F. Longenbach more than expected).

Fields of papers citing papers by K. F. Longenbach

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. F. Longenbach. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. F. Longenbach. The network helps show where K. F. Longenbach may publish in the future.

Co-authorship network of co-authors of K. F. Longenbach

This figure shows the co-authorship network connecting the top 25 collaborators of K. F. Longenbach. A scholar is included among the top collaborators of K. F. Longenbach based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. F. Longenbach. K. F. Longenbach is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Longenbach, K. F., et al.. (1992). High-breakdown-voltage AlSbAs/InAs n-channel field-effect transistors. IEEE Electron Device Letters. 13(4). 192–194. 24 indexed citations
3.
Longenbach, K. F., et al.. (1992). Observation of piezoelectric field induced carriers in AlGaAs/InGaAs strained-layer heterostructures. Applied Physics Letters. 60(12). 1513–1515. 14 indexed citations
4.
Longenbach, K. F., et al.. (1991). AlGaAs/GaAs heterojunction bipolar transistor with a two-dimensional electron gas emitter. Applied Physics Letters. 59(20). 2582–2584. 13 indexed citations
5.
Longenbach, K. F., et al.. (1991). Modulated beam epitaxial growth of high quality GaAs single quantum wells at low temperature. Applied Physics Letters. 59(7). 820–822. 2 indexed citations
6.
Longenbach, K. F., et al.. (1991). Two-dimensional electron gas modulated resonant tunneling transistor. Applied Physics Letters. 59(8). 967–969. 3 indexed citations
7.
Longenbach, K. F., et al.. (1991). AlGaSb/GaSb diodes grown by molecular-beam epitaxy. Applied Physics Letters. 59(9). 1117–1119. 10 indexed citations
8.
Xin, Sixu, K. F. Longenbach, & W.I. Wang. (1991). Low temperature growth of GaAs quantum well lasers by modulated beam epitaxy. Electronics Letters. 27(12). 1072–1073. 1 indexed citations
9.
Longenbach, K. F., et al.. (1991). Molecular beam epitaxy of GaSb. Applied Physics Letters. 59(19). 2427–2429. 44 indexed citations
10.
Longenbach, K. F., et al.. (1991). p-type doping of GaSb by Ge and Sn grown by molecular beam epitaxy. Journal of Applied Physics. 69(5). 3393–3395. 20 indexed citations
11.
Longenbach, K. F., L. F. Luo, Sixu Xin, & W.I. Wang. (1991). Resonant tunneling in polytype InAs/AlSb/GaSb heterostructures. Journal of Crystal Growth. 111(1-4). 651–658. 10 indexed citations
12.
Xin, Sixu, K. F. Longenbach, & W.I. Wang. (1991). AlGaAs–GaAs–InGaAs strained layer laser structure with performance independent of AlGaAs layer quality. Electronics Letters. 27(3). 199–201. 10 indexed citations
13.
Longenbach, K. F., et al.. (1990). Application of split-gate and dual-gate field-effect transistor designs to InAs field-effect transistors. Solid-State Electronics. 33(9). 1211–1213. 3 indexed citations
14.
Longenbach, K. F., R. Beresford, & W.I. Wang. (1990). A complementary heterostructure field effect transistor technology based on InAs/AlSb/GaSb. IEEE Transactions on Electron Devices. 37(10). 2265–2267. 17 indexed citations
15.
Beresford, R., et al.. (1990). Interband tunneling in single-barrier InAs/AlSb/GaSb heterostructures. Applied Physics Letters. 56(10). 952–954. 33 indexed citations
16.
Luo, L. F., K. F. Longenbach, & W.I. Wang. (1990). p-channel modulation-doped field-effect transistors based on AlSb/sub 0.9/As/sub 0.1//GaSb. IEEE Electron Device Letters. 11(12). 567–569. 21 indexed citations
17.
Beresford, R., et al.. (1990). Resonant interband tunneling through a 110 nm InAs quantum well. Applied Physics Letters. 56(6). 551–553. 21 indexed citations
18.
Luo, L. F., K. F. Longenbach, & W.I. Wang. (1990). Kink-free AlInAs/GaInAs/InP HEMTs grown by molecular beam epitaxy. Electronics Letters. 26(12). 779–780. 4 indexed citations
19.
Longenbach, K. F., et al.. (1990). Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructures. Applied Physics Letters. 57(15). 1554–1556. 42 indexed citations
20.
Beresford, R., et al.. (1990). Resonant interband tunneling device with multiple negative differential resistance regions. IEEE Electron Device Letters. 11(3). 110–112. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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