C.L. Lau

2.0k total citations · 1 hit paper
37 papers, 1.6k citations indexed

About

C.L. Lau is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, C.L. Lau has authored 37 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 14 papers in Atomic and Molecular Physics, and Optics and 8 papers in Materials Chemistry. Recurrent topics in C.L. Lau's work include Semiconductor materials and devices (23 papers), Radio Frequency Integrated Circuit Design (14 papers) and Advancements in Semiconductor Devices and Circuit Design (13 papers). C.L. Lau is often cited by papers focused on Semiconductor materials and devices (23 papers), Radio Frequency Integrated Circuit Design (14 papers) and Advancements in Semiconductor Devices and Circuit Design (13 papers). C.L. Lau collaborates with scholars based in United States, Canada and China. C.L. Lau's co-authors include Max M. Shulaker, Gage Hills, Mindy D. Bishop, Tathagata Srimani, Samuel H. Fuller, Yihang Liu, Qingzhou Liu, Chongwu Zhou, Rebecca Ho and Pritpal S. Kanhaiya and has published in prestigious journals such as Nature, ACS Nano and Applied Physics Letters.

In The Last Decade

C.L. Lau

35 papers receiving 1.5k citations

Hit Papers

Modern microprocessor built from complementary carbon nan... 2019 2026 2021 2023 2019 100 200 300 400 500

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C.L. Lau United States 13 1.1k 655 454 204 191 37 1.6k
Simone Dehm Germany 25 999 0.9× 991 1.5× 664 1.5× 252 1.2× 179 0.9× 54 1.7k
Beiju Huang China 20 1.1k 1.0× 373 0.6× 277 0.6× 244 1.2× 108 0.6× 109 1.4k
Zhongwei Xu China 19 1.2k 1.1× 977 1.5× 400 0.9× 161 0.8× 242 1.3× 37 1.9k
Ashutosh Tripathi Netherlands 22 1.5k 1.4× 535 0.8× 449 1.0× 157 0.8× 417 2.2× 50 1.8k
Hojin Lee South Korea 23 1.1k 1.0× 317 0.5× 388 0.9× 135 0.7× 209 1.1× 125 1.5k
Mingxuan Cao China 21 743 0.7× 611 0.9× 235 0.5× 139 0.7× 180 0.9× 59 1.1k
Hongsik Park South Korea 22 1.1k 1.0× 1.4k 2.2× 702 1.5× 311 1.5× 165 0.9× 70 2.4k
Jagan Singh Meena Taiwan 17 803 0.7× 484 0.7× 419 0.9× 66 0.3× 312 1.6× 35 1.3k
Jesse Tice United States 19 757 0.7× 604 0.9× 143 0.3× 97 0.5× 125 0.7× 43 1.2k

Countries citing papers authored by C.L. Lau

Since Specialization
Citations

This map shows the geographic impact of C.L. Lau's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C.L. Lau with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C.L. Lau more than expected).

Fields of papers citing papers by C.L. Lau

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C.L. Lau. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C.L. Lau. The network helps show where C.L. Lau may publish in the future.

Co-authorship network of co-authors of C.L. Lau

This figure shows the co-authorship network connecting the top 25 collaborators of C.L. Lau. A scholar is included among the top collaborators of C.L. Lau based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C.L. Lau. C.L. Lau is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yu, Andrew, et al.. (2022). Foundry Integration of Carbon Nanotube FETs With 320 nm Contacted Gate Pitch Using New Lift-Off-Free Process. IEEE Electron Device Letters. 43(3). 486–489. 7 indexed citations
2.
Ho, Rebecca, C.L. Lau, Gage Hills, & Max M. Shulaker. (2019). Carbon Nanotube CMOS Analog Circuitry. IEEE Transactions on Nanotechnology. 18. 845–848. 45 indexed citations
3.
Kanhaiya, Pritpal S., C.L. Lau, Gage Hills, Mindy D. Bishop, & Max M. Shulaker. (2019). Carbon Nanotube-Based CMOS SRAM: 1 kbit 6T SRAM Arrays and 10T SRAM Cells. IEEE Transactions on Electron Devices. 66(12). 5375–5380. 31 indexed citations
4.
Hills, Gage, C.L. Lau, Andrew Wright, et al.. (2019). Modern microprocessor built from complementary carbon nanotube transistors. Nature. 572(7771). 595–602. 518 indexed citations breakdown →
5.
Kanhaiya, Pritpal S., C.L. Lau, Gage Hills, Mindy D. Bishop, & Max M. Shulaker. (2019). 1 Kbit 6T SRAM Arrays in Carbon Nanotube FET CMOS. T54–T55. 14 indexed citations
6.
Lau, C.L., Tathagata Srimani, Mindy D. Bishop, Gage Hills, & Max M. Shulaker. (2018). Tunable n-Type Doping of Carbon Nanotubes through Engineered Atomic Layer Deposition HfOX Films. ACS Nano. 12(11). 10924–10931. 51 indexed citations
7.
Cao, Xuan, Fanqi Wu, C.L. Lau, et al.. (2017). Top-Contact Self-Aligned Printing for High-Performance Carbon Nanotube Thin-Film Transistors with Sub-Micron Channel Length. ACS Nano. 11(2). 2008–2014. 37 indexed citations
8.
Liu, Yihang, Anyi Zhang, Chenfei Shen, et al.. (2017). Red Phosphorus Nanodots on Reduced Graphene Oxide as a Flexible and Ultra-Fast Anode for Sodium-Ion Batteries. ACS Nano. 11(6). 5530–5537. 211 indexed citations
10.
Feng, M. & C.L. Lau. (1992). Ion-implanted In/sub (x)/Ga/sub (1-x)/As MESFET's on GaAs substrate for low-cost millimeter-wave IC application. IEEE Transactions on Electron Devices. 39(3). 484–493. 6 indexed citations
11.
Feng, M., et al.. (1992). Millimeter-wave power performance of ion-implanted In/sub x/Ga/sub (1-x)/As on GaAs metal semiconductor field-effect transistors. IEEE Microwave and Guided Wave Letters. 2(6). 225–227. 2 indexed citations
12.
Feng, M., C.L. Lau, & C. Ito. (1991). A technique for correction of parasitic capacitance on microwave f/sub t/ measurements of MESFET and HEMT devices. IEEE Transactions on Microwave Theory and Techniques. 39(11). 1880–1882. 7 indexed citations
13.
Lau, C.L., et al.. (1991). 60-GHz noise performance of ion-implanted In/sub x/Ga/sub 1-x/As MESFET's. IEEE Electron Device Letters. 12(5). 244–245. 5 indexed citations
14.
Lau, C.L., et al.. (1990). 44 GHz hybrid low noise amplifiers using ion-implanted InxGa1-xAs MESFETs. 1. 431–433. 4 indexed citations
15.
Feng, M., C.L. Lau, V. Eu, & C. Ito. (1990). Does the two-dimensional electron gas effect contribute to high-frequency and high-speed performance of field-effect transistors?. Applied Physics Letters. 57(12). 1233–1235. 29 indexed citations
16.
Feng, M., et al.. (1989). High-performance millimeter-wave ion-implanted GaAs MESFETs. IEEE Electron Device Letters. 10(2). 95–97. 12 indexed citations
17.
Feng, M., et al.. (1989). Enhanced microwave performance of ion-implanted MESFET with graded GaAs/AlGaAs heterojunctions. Electronics Letters. 25(17). 1105–1106. 1 indexed citations
18.
Feng, M., et al.. (1989). Millimeter-wave ion-implanted graded In/sub x/Ga/sub 1-x/As MESFETs grown by MOCVD. IEEE Electron Device Letters. 10(10). 449–451. 7 indexed citations
19.
Feng, M., et al.. (1989). Ion-implanted GaAs/AlGaAs heterojunction FET's grown by MOCVD. IEEE Electron Device Letters. 10(6). 264–266. 1 indexed citations
20.
Feng, M., et al.. (1989). 0.25- mu m gate millimeter-wave ion-implanted GaAs MESFETs. IEEE Electron Device Letters. 10(5). 186–188. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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