Z.H. Lu

700 citations

16 papers · 572 indexed · h-index 9

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 13
- Semiconductor materials and interfaces 2
- Quantum and electron transport phenomena 2
Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials 2
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 7
- Advancements in Battery Materials 2
- Advanced Semiconductor Detectors and Materials 2
Materials Chemistry
- Quantum Dots Synthesis And Properties 4
Biomedical Engineering

Co-authors: A. Majerfeld Arthur J. Nozik M. C. Hanna O. I. Mićić Julian Sprague Ling Yang P. D. Wright V. Eu
Cited by: Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering
Journals: Applied Physics Letters (6 papers)Journal of Applied Physics (3 papers)Journal of Crystal Growth (2 papers)
Partner nations: United States China Poland

In The Last Decade

Z.H. Lu

15 papers receiving 547 citations

Peers

Countries citing papers authored by Z.H. Lu

Since Specialization

Citations

This map shows the geographic impact of Z.H. Lu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Z.H. Lu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Z.H. Lu more than expected).

Fields of papers citing papers by Z.H. Lu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Z.H. Lu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Z.H. Lu. The network helps show where Z.H. Lu may publish in the future.

Co-authorship network

The 20 scholars most cited alongside Z.H. Lu, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Z.H. Lu Line = papers co-authored together Z.H. Lu links everyone, so they are left out of the graph.

All Works

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16 of 16 papers shown

#	Work
1	Ce-doped Na ₃ V _1.9 Ce _0.1 (PO ₄ ) ₂ F ₃ as a cathode material for high-performance sodium-ion batteries Sustainable Energy & Fuels ·Radhika Bhutta,Xianguang Zeng,Xuesong Zhou,(unknown),Yan Wen,Dan Zhang,Z.H. Lu,長谷川聖子	2025	1
2	Regulation of electronic structure and enhancement of potassium storage performance in NbSSe nanosheets facilitated by intermolecular heterojunctions Chemical Engineering Journal ·Wei Yang,Xin Du,Z.H. Lu,Junguo He,Luxiang Wang,Dan Li	2025	0
3	Hot carrier solar cells AIP conference proceedings ·M. C. Hanna,Z.H. Lu,Arthur J. Nozik	1997	18
4	Highly efficient band-edge emission from InP quantum dots Applied Physics Letters ·O. I. Mićić,Julian Sprague,Z.H. Lu,Arthur J. Nozik	1996	246
5	A comprehensive optical characterization method for high-performance n-p-n AlGaAs-GaAs heterojunction bipolar transistors IEEE Journal of Selected Topics in Quantum Electronics ·Z.H. Lu,A. Majerfeld,P. D. Wright,Ling Yang	1995	18
6	Determination of carrier and impurity profiles in doped n-type quantum well structures Materials Science and Engineering B ·Mohammed D. Abdulhadi,Z.H. Lu,Mario E. Ablin,Haoxiang Wei,A. Majerfeld	1994	2
7	Elimination of an artifact in the photoluminescence spectra of heavily doped C-GaAs epitaxial layers on undoped GaAs substrates Journal of Applied Physics ·Z.H. Lu,A. Majerfeld	1994	6
8	Determination of band gap narrowing and hole density for heavily C-doped GaAs by photoluminescence spectroscopy Applied Physics Letters ·Z.H. Lu,M. C. Hanna,A. Majerfeld	1994	37
9	Admittance spectroscopy characterization of InP/InGaAsP single quantum wells grown by low-pressure metalorganic chemical vapor deposition Applied Physics Letters ·J.H. Zhao,Z.H. Lu,Walter R. Buchwald,D. Coblentz,Emily Woods	1993	3
10	Molecular-beam-epitaxial-grown n-GaAs1−xSbx/N-GaAs heterostructures characterized by admittance spectroscopy Journal of Applied Physics ·J.H. Zhao,Z.H. Lu	1993	2
11	Heavily doped p-GaAs grown by low-pressure organometallic vapor phase epitaxy using liquid CCl4 Journal of Applied Physics ·Ling Yang,P. D. Wright,V. Eu,Z.H. Lu,A. Majerfeld	1992	68
12	Intrinsic carbon incorporation in very high purity MOVPE GaAs Journal of Crystal Growth ·M. C. Hanna,Z.H. Lu,Haoxiang Wei,Mario E. Ablin,A. Majerfeld	1992	11
13	Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily doped p-type GaAs Applied Physics Letters ·M. C. Hanna,Z.H. Lu,A. Majerfeld	1991	107
14	Carbon doping exceeding 1020 cm-3 in GaAs grown by AP-MOVPE Journal of Crystal Growth ·M. C. Hanna,Z.H. Lu,Mario E. Ablin,孙法明,Haoxiang Wei,A. Majerfeld,D. M. Szmyd	1991	18
15	Determination of donor and acceptor densities in high-purity GaAs from photoluminescence analysis Applied Physics Letters ·Z.H. Lu,M. C. Hanna,D. M. Szmyd,Haoxiang Wei,A. Majerfeld	1990	31
16	Atmospheric pressure organometallic vapor phase epitaxy growth of high-mobility GaAs using trimethylgallium and arsine Applied Physics Letters ·M. C. Hanna,Z.H. Lu,Haoxiang Wei,Mario E. Ablin,A. Majerfeld	1990	4

About Z.H. Lu

Z.H. Lu is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics, having authored 16 papers that have together received 572 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (13 papers), Semiconductor materials and devices (7 papers), Quantum Dots Synthesis And Properties (4 papers), Semiconductor materials and interfaces (2 papers), Quantum and electron transport phenomena (2 papers), Advancements in Battery Materials (2 papers), GaN-based semiconductor devices and materials (2 papers) and Advanced Semiconductor Detectors and Materials (2 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (322 citations), Condensed Matter Physics (95 citations) and Electrical and Electronic Engineering (435 citations). Z.H. Lu has collaborated with scholars based in United States, China and Poland. Frequent co-authors include A. Majerfeld, Arthur J. Nozik, M. C. Hanna, O. I. Mićić, Julian Sprague, Ling Yang, P. D. Wright, V. Eu, D. M. Szmyd and J.H. Zhao. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Crystal Growth, IEEE Journal of Selected Topics in Quantum Electronics and Sustainable Energy & Fuels.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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