Tsz‐Fai Leung

1.2k citations

46 papers · 1.0k indexed · h-index 18

Condensed Matter Physics top 5%
- Physics of Superconductivity and Magnetism 6
- Advanced Condensed Matter Physics 5
Electronic, Optical and Magnetic Materials top 10%
- Copper Interconnects and Reliability 6
- Magnetic and transport properties of perovskites and related materials 5
Mechanics of Materials top 5%
- Muon and positron interactions and applications 19
Catalysis
Materials Chemistry top 10%
Electrical and Electronic Engineering
- Semiconductor materials and devices 12
- Advancements in Battery Materials 6
- Thin-Film Transistor Technologies 5

Co-authors: B. Nielsen B. N. Harmon C. T. Chan Kelvin G. Lynn K. G. Lynn P. Asoka‐Kumar Gary W. Rubloff O. W. Holland
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Mechanics of Materials
Journals: Physical review. B, Condensed matter (12 papers)Journal of Applied Physics (8 papers)Chemical Communications (3 papers)
Partner nations: United States Hong Kong Germany

In The Last Decade

Tsz‐Fai Leung

45 papers receiving 985 citations

Peers

Countries citing papers authored by Tsz‐Fai Leung

Since Specialization

Citations

This map shows the geographic impact of Tsz‐Fai Leung's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tsz‐Fai Leung with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tsz‐Fai Leung more than expected).

Fields of papers citing papers by Tsz‐Fai Leung

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tsz‐Fai Leung. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tsz‐Fai Leung. The network helps show where Tsz‐Fai Leung may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Tsz‐Fai Leung, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Tsz‐Fai Leung Line = papers co-authored together Tsz‐Fai Leung links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Base-promoted triple cleavage of CCl₂Br: a direct one-pot synthesis of unsymmetrical oxalamide derivatives Chemical Communications ·Nurul Husna Muchtar,Світлана Сергіївна Григорук,FU Dazhi,Hong-Do Kim,原内文男,М.Б. Миронов,纳蒂夫,Chien‐Hung Li,Tsz‐Fai Leung,Wei‐Yu Lin	2024	4
2	Batch vs Continuous‐Flow Method to Synthesize N‐(3‐Acylamidopropyl)Lactams Through N−C Bond Cleavage in Amides with Amidines Advanced Synthesis & Catalysis ·FU Dazhi,原内文男,纳蒂夫,Tsz‐Fai Leung,Wei‐Yu Lin	2024	1
3	Selectivity Control of the Ligand Exchange at Carbon in α‐Metallated Ylides as a Route to Ketenyl Anions** Angewandte Chemie International Edition ·Sigfrido Burgos-Cáceres,V. Kosolapov,Tsz‐Fai Leung,F Afifi,Viktoria H. Gessner	2023	17
4	Reactive Dicarbon as a Flexible Ligand for Transition-Metal Coordination and Catalysis Journal of the American Chemical Society ·Prajwal S. Bundhade,Xue Xue,Titel Jurca,Glenn P. A. Yap,Tsz‐Fai Leung,Tiow‐Gan Ong	2022	7
5	Isolable dicarbon stabilized by a single phosphine ligand Nature Chemistry ·Tsz‐Fai Leung,W. S. L. S.,Prajwal S. Bundhade,Eveline Weidner-Ronnefelder,Wei‐Min Ching,Glenn P. A. Yap,Tao Yang,Lili Zhao,Tiow‐Gan Ong,Gernot Frenking	2020	21
6	Facile synthesis of polycyclic metallaarynes Chemical Science ·Wenqing Ruan,Tsz‐Fai Leung,Chuan Shi,KK Lee,Herman H. Y. Sung,Ian D. Williams,Zhenyang Lin,Guochen Jia	2018	34
7	Total syntheses of (±)-musellarins A–C Chemical Communications ·Rhoden El,Tsz‐Fai Leung,Rongbiao Tong	2014	23
8	Large-Grain Polysilicon Crystallization Enhancement Using Pulsed RTA IEEE Electron Device Letters ·Jiamin Cao,Tsz‐Fai Leung,M.C. Poon,Mansun Chan	2004	4
9	The effect of nickel thickness in nickel-induced-lateral-crystallization of amorphous Si Jiamin Cao,Tsz‐Fai Leung,Isabel Monreal-Leyva,M.C. Poon	2002	4
10	The effect of amorphous Si thickness in metal induced lateral crystallization technology Tsz‐Fai Leung,Jiamin Cao,Isabel Monreal-Leyva,M.C. Poon	2002	4
11	Defect profiling in multilayered systems using mean depth scaling Applied Surface Science ·G. C. Aers,Pamela A. Marshall,Tsz‐Fai Leung,R. D. Goldberg	1995	27
12	Study of SiO2-Si and metal-oxide-semiconductor structures using positrons Journal of Applied Physics ·Tsz‐Fai Leung,P. Asoka‐Kumar,B. Nielsen,K. G. Lynn	1993	35
13	Defects in MeV Si-implanted Si probed with positrons Journal of Applied Physics ·B. Nielsen,O. W. Holland,Tsz‐Fai Leung,Kelvin G. Lynn	1993	68
14	Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy Physical review. B, Condensed matter ·P. Asoka‐Kumar,H.‐J. Gossmann,F. C. Unterwald,L. C. Feldman,Tsz‐Fai Leung,Hongqiang Wang,С.А. Зеньков,B. Nielsen,Kelvin G. Lynn	1993	22
15	Positron annihilation studies in the field induced depletion regions of metal-oxide-semiconductor structures Journal of Applied Physics ·Wahono Prastowo,Tsz‐Fai Leung,Kelvin G. Lynn,B. Nielsen,A.A. YAKOVLEV,Z. A. Weinberg,Gary W. Rubloff	1992	6
16	Point defects in Si thin films grown by molecular beam epitaxy Applied Physics Letters ·H.‐J. Gossmann,Wahono Prastowo,Tsz‐Fai Leung,B. Nielsen,Kelvin G. Lynn,F. C. Unterwald,L. C. Feldman	1992	37
17	Range of slow positrons in metal overlayers on Al Applied Physics Letters ·B. Nielsen,Kelvin G. Lynn,Tsz‐Fai Leung,G.J. van der Kolk,L.J. van IJzendoorn	1990	10
18	Spin-polarized electronic structure of bcc Gd Physica B+C ·Tsz‐Fai Leung,D. ; https://orcid.org/0000-0001-6034-9640 Leip,B. N. Harmon	1988	9
19	The SiO₂/Si Interface Probed With Positrons MRS Proceedings ·B. Nielsen,Kelvin G. Lynn,Tsz‐Fai Leung,D. O. Welch,Gary W. Rubloff	1987	4
20	Three-Spin Correlations of the King Model on q=3 Lattices Chinese Journal of Physics ·C.P. Cannon,Tsz‐Fai Leung	1985	1

About Tsz‐Fai Leung

Tsz‐Fai Leung is a scholar working on Condensed Matter Physics, Mechanics of Materials and Electronic, Optical and Magnetic Materials, having authored 46 papers that have together received 1.0k indexed citations. Recurring topics across this work include Muon and positron interactions and applications (19 papers), Semiconductor materials and devices (12 papers), Advancements in Battery Materials (6 papers), Physics of Superconductivity and Magnetism (6 papers), Copper Interconnects and Reliability (6 papers), Magnetic and transport properties of perovskites and related materials (5 papers), Advanced Condensed Matter Physics (5 papers) and Thin-Film Transistor Technologies (5 papers). The work is most often cited by research in Condensed Matter Physics (232 citations), Electronic, Optical and Magnetic Materials (290 citations) and Mechanics of Materials (305 citations). Tsz‐Fai Leung has collaborated with scholars based in United States, Hong Kong and Germany. Frequent co-authors include B. Nielsen, B. N. Harmon, B. N. Harmon, C. T. Chan, Kelvin G. Lynn, K. G. Lynn, P. Asoka‐Kumar, Gary W. Rubloff, O. W. Holland and W. Y. Ching. Their work appears in journals such as Physical review. B, Condensed matter, Journal of Applied Physics, Chemical Communications, Applied Physics Letters and Applied Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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