T.J. Smith

565 total citations
28 papers, 392 citations indexed

About

T.J. Smith is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, T.J. Smith has authored 28 papers receiving a total of 392 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 6 papers in Condensed Matter Physics and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in T.J. Smith's work include Radio Frequency Integrated Circuit Design (13 papers), Silicon Carbide Semiconductor Technologies (12 papers) and Semiconductor materials and devices (6 papers). T.J. Smith is often cited by papers focused on Radio Frequency Integrated Circuit Design (13 papers), Silicon Carbide Semiconductor Technologies (12 papers) and Semiconductor materials and devices (6 papers). T.J. Smith collaborates with scholars based in United States and United Kingdom. T.J. Smith's co-authors include S. Sriram, M.C. Driver, H. McD. Hobgood, Scott T. Allen, S.T. Sheppard, J. Milligan, W.L. Pribble, R.P. Smith, John W. Palmour and Joseph J. Sumakeris and has published in prestigious journals such as IEEE Transactions on Microwave Theory and Techniques, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

T.J. Smith

24 papers receiving 348 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T.J. Smith United States 10 380 150 69 24 19 28 392
D. Eng United States 11 308 0.8× 112 0.7× 160 2.3× 26 1.1× 10 0.5× 45 327
D. Leung United States 12 313 0.8× 114 0.8× 174 2.5× 18 0.8× 10 0.5× 49 333
E. Belohoubek United States 10 202 0.5× 122 0.8× 66 1.0× 29 1.2× 19 1.0× 33 315
Kazuhisa Yamauchi Japan 11 407 1.1× 120 0.8× 96 1.4× 21 0.9× 6 0.3× 31 446
Haorui Luo Singapore 11 246 0.6× 147 1.0× 67 1.0× 9 0.4× 7 0.4× 21 281
Mattias Südow Sweden 10 390 1.0× 228 1.5× 65 0.9× 18 0.8× 4 0.2× 19 405
Yanbin Luo United States 10 317 0.8× 37 0.2× 66 1.0× 39 1.6× 5 0.3× 28 347
Tatsuya Hirose Japan 12 395 1.0× 57 0.4× 65 0.9× 13 0.5× 24 1.3× 46 410
Stephan Maroldt Germany 9 304 0.8× 219 1.5× 71 1.0× 69 2.9× 13 0.7× 28 348
D. Floriot France 14 740 1.9× 539 3.6× 168 2.4× 41 1.7× 4 0.2× 60 767

Countries citing papers authored by T.J. Smith

Since Specialization
Citations

This map shows the geographic impact of T.J. Smith's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T.J. Smith with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T.J. Smith more than expected).

Fields of papers citing papers by T.J. Smith

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T.J. Smith. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T.J. Smith. The network helps show where T.J. Smith may publish in the future.

Co-authorship network of co-authors of T.J. Smith

This figure shows the co-authorship network connecting the top 25 collaborators of T.J. Smith. A scholar is included among the top collaborators of T.J. Smith based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T.J. Smith. T.J. Smith is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Sriram, S., et al.. (2009). High-Gain SiC MESFETs Using Source-Connected Field Plates. IEEE Electron Device Letters. 30(9). 952–953. 24 indexed citations
3.
Agarwal, Anant, T.W. O'Keeffe, J.R. Szedon, et al.. (2005). Microx -An All Silicon Microwave Technology. 144–145. 1 indexed citations
4.
Siergiej, R.R., Anant Agarwal, Albert A. Burk, et al.. (2005). Novel silicon carbide mosfet's for monolithic integrated circuits. 25–26.
5.
Pribble, W.L., John W. Palmour, S.T. Sheppard, et al.. (2003). Applications of SiC MESFETs and GaN HEMTs in power amplifier design. 3. 1819–1822. 56 indexed citations
6.
Sriram, S., R.C. Clarke, R.L. Messham, T.J. Smith, & M.C. Driver. (2003). High voltage operation in class B GaAs X-band power MESFETs. 218–227. 2 indexed citations
7.
Sriram, S., R.L. Messham, T.J. Smith, H. McD. Hobgood, & M.C. Driver. (2002). High-performance microwave power MESFETs on GaAs/Si. 229–232.
8.
Sriram, S., T.J. Smith, L.B. Rowland, et al.. (2002). High power operation of 4H-SiC MESFETs at 10 GHz. 138–139. 1 indexed citations
9.
Sriram, S., J. Ostop, T.J. Smith, et al.. (2002). Recent application of silicon carbide to high power microwave. 1. 53–56. 6 indexed citations
10.
Palmour, John W., S.T. Sheppard, R.P. Smith, et al.. (2002). Wide bandgap semiconductor devices and MMICs for RF power applications. 17.4.1–17.4.4. 65 indexed citations
11.
Adam, J.D., et al.. (2002). K-band circulators on semiconductor wafers. 1. 113–115. 2 indexed citations
12.
13.
Sriram, S., T.J. Smith, G. Augustine, et al.. (2002). High efficiency operation of 6-H SiC MESFETs at 6 GHz. 104–105. 6 indexed citations
14.
Sriram, S. & T.J. Smith. (2000). Reduction of common-source inductance in FET/HEMT structures utilizing wave-propagation effects. IEEE Transactions on Microwave Theory and Techniques. 48(3). 406–411. 2 indexed citations
15.
Sriram, S., G. Augustine, Albert A. Burk, et al.. (1996). 4H-SiC MESFET's with 42 GHz f/sub max/. IEEE Electron Device Letters. 17(7). 369–371. 58 indexed citations
16.
Sriram, S., R.C. Clarke, Albert A. Burk, et al.. (1994). RF performance of SiC MESFET's on high resistivity substrates. IEEE Electron Device Letters. 15(11). 458–459. 50 indexed citations
17.
Agarwal, Anant, T.W. O'Keeffe, H. McD. Hobgood, et al.. (1993). MICROX-an all-silicon technology for monolithic microwave integrated circuits. IEEE Electron Device Letters. 14(5). 219–221. 44 indexed citations
18.
Clarke, R.C., et al.. (1992). Silicon carbide microwave MESFET's. IEEE Transactions on Electron Devices. 39(11). 2666–2666. 1 indexed citations
19.
Smith, T.J., et al.. (1974). An IMPATT Pump for a Low-Noise Parametric Amplifier (Short Papers). IEEE Transactions on Microwave Theory and Techniques. 22(12). 1331–1334. 1 indexed citations
20.
Smith, T.J., et al.. (1974). An IMPATT Pump for a Low Noise Parametric Amplifier. 228–230. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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