Satoshi Hamaguchi

10.8k total citations · 1 hit paper
252 papers, 6.3k citations indexed

About

Satoshi Hamaguchi is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Materials Chemistry. According to data from OpenAlex, Satoshi Hamaguchi has authored 252 papers receiving a total of 6.3k indexed citations (citations by other indexed papers that have themselves been cited), including 148 papers in Electrical and Electronic Engineering, 72 papers in Computational Mechanics and 62 papers in Materials Chemistry. Recurrent topics in Satoshi Hamaguchi's work include Plasma Diagnostics and Applications (97 papers), Semiconductor materials and devices (68 papers) and Ion-surface interactions and analysis (67 papers). Satoshi Hamaguchi is often cited by papers focused on Plasma Diagnostics and Applications (97 papers), Semiconductor materials and devices (68 papers) and Ion-surface interactions and analysis (67 papers). Satoshi Hamaguchi collaborates with scholars based in Japan, United States and Germany. Satoshi Hamaguchi's co-authors include Rida T. Farouki, Hiromichi Ohta, Katsuhisa Kitano, D. H. E. Dubin, Satoshi Ikawa, Kazuhiro Karahashi, W. Horton, Mohamed Aqiel Dalvie, S. M. Rossnagel and Masanaga Fukasawa and has published in prestigious journals such as Physical Review Letters, The Journal of Chemical Physics and Applied Physics Letters.

In The Last Decade

Satoshi Hamaguchi

241 papers receiving 6.0k citations

Hit Papers

Effects of pH on Bacterial Inactivation in Aqueous Soluti... 2009 2026 2014 2020 2009 100 200 300 400

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Satoshi Hamaguchi Japan 42 2.9k 1.8k 1.3k 1.2k 1.1k 252 6.3k
Andreas Menzel Switzerland 50 1.1k 0.4× 1.3k 0.8× 1.7k 1.3× 464 0.4× 560 0.5× 158 9.4k
Gary S. Selwyn United States 33 3.6k 1.2× 1.3k 0.8× 923 0.7× 2.9k 2.5× 587 0.5× 61 5.4k
B. L. Henke United States 19 1.6k 0.6× 1.9k 1.1× 1.6k 1.3× 206 0.2× 268 0.2× 54 7.2k
Gregor E. Morfill Germany 36 1.4k 0.5× 2.8k 1.5× 613 0.5× 1.9k 1.7× 2.5k 2.2× 116 6.1k
James F. Ziegler United States 13 1.3k 0.5× 750 0.4× 1.9k 1.4× 292 0.3× 162 0.1× 22 5.0k
Jianwei Miao United States 51 1.5k 0.5× 2.6k 1.5× 2.7k 2.1× 464 0.4× 133 0.1× 137 11.2k
Hubertus M. Thomas Germany 51 1.4k 0.5× 8.4k 4.7× 713 0.5× 1.0k 0.9× 6.2k 5.4× 297 10.3k
I. Snigireva France 38 890 0.3× 761 0.4× 1.5k 1.1× 496 0.4× 145 0.1× 259 7.1k
J. F. Ziegler United States 41 3.4k 1.2× 2.1k 1.2× 2.0k 1.5× 178 0.2× 131 0.1× 160 8.1k
Ana Díaz Switzerland 40 709 0.2× 856 0.5× 881 0.7× 474 0.4× 275 0.2× 172 6.0k

Countries citing papers authored by Satoshi Hamaguchi

Since Specialization
Citations

This map shows the geographic impact of Satoshi Hamaguchi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Satoshi Hamaguchi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Satoshi Hamaguchi more than expected).

Fields of papers citing papers by Satoshi Hamaguchi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Satoshi Hamaguchi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Satoshi Hamaguchi. The network helps show where Satoshi Hamaguchi may publish in the future.

Co-authorship network of co-authors of Satoshi Hamaguchi

This figure shows the co-authorship network connecting the top 25 collaborators of Satoshi Hamaguchi. A scholar is included among the top collaborators of Satoshi Hamaguchi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Satoshi Hamaguchi. Satoshi Hamaguchi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Donkó, Zoltán, et al.. (2025). Numerical simulation of chemical reactions in phosphate-buffered saline (PBS) exposed to helium pulsed plasmas at atmospheric pressure. Japanese Journal of Applied Physics. 64(4). 46002–46002.
2.
Hamaguchi, Satoshi, et al.. (2025). Influence of gas flow rate on modes of reactive oxygen and nitrogen species in a grid-type surface dielectric barrier discharge. Journal of Applied Physics. 137(20). 1 indexed citations
3.
Hirata, Akiko, et al.. (2024). Surface chemical reactions of etch stop prevention in plasma-enhanced atomic layer etching of silicon nitride. Surface and Coatings Technology. 477. 130365–130365. 5 indexed citations
4.
Isobe, Michiro, et al.. (2024). Etch-stop mechanisms in plasma-enhanced atomic layer etching of silicon nitride: A molecular dynamics study. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 42(5). 1 indexed citations
5.
Wu, Stephen, Ryo Yoshida, Zoltán Donkó, et al.. (2024). Machine learning-based prediction of the electron energy distribution function and electron density of argon plasma from the optical emission spectra. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 42(5). 4 indexed citations
6.
7.
Benkadda, S., et al.. (2023). Spectroscopic analysis improvement using convolutional neural networks. Journal of Physics D Applied Physics. 56(35). 354001–354001. 4 indexed citations
8.
Ito, Tomoko, et al.. (2023). Polyetheretherketone (PEEK) Implant Functionalization with Magnetron-Sputtered SrTiO3 for Regenerative Medicine. Plasma Medicine. 13(3). 53–67. 2 indexed citations
9.
Hamaguchi, Satoshi, et al.. (2023). Global numerical simulation of chemical reactions in phosphate-buffered saline (PBS) exposed to atmospheric-pressure plasmas. Plasma Sources Science and Technology. 32(8). 85014–85014. 5 indexed citations
10.
Ito, Tomoko, et al.. (2023). Molecular dynamics simulation of amine formation in plasma-enhanced chemical vapor deposition with hydrocarbon and amino radicals. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 41(6). 2 indexed citations
11.
Isobe, Michiro, et al.. (2023). Molecular dynamics study of SiO2 nanohole etching by fluorocarbon ions. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 41(2). 8 indexed citations
12.
Donkó, Zoltán, et al.. (2023). First-principles simulation of optical emission spectra for low-pressure argon plasmas and its experimental validation. Plasma Sources Science and Technology. 32(12). 125007–125007. 9 indexed citations
13.
Hirata, Akiko, Masanaga Fukasawa, Yoshiya Hagimoto, et al.. (2023). High-throughput SiN ALE: surface reaction and ion-induced damage generation mechanisms. Japanese Journal of Applied Physics. 62(SI). SI1015–SI1015. 1 indexed citations
14.
Isobe, Michiro, et al.. (2022). Molecular dynamics simulation of oxide-nitride bilayer etching with energetic fluorocarbon ions. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 40(6). 11 indexed citations
15.
Hamaguchi, Satoshi, et al.. (2022). Roles of the reaction boundary layer and long diffusion of stable reactive nitrogen species (RNS) in plasma-irradiated water as an oxidizing media — numerical simulation study. Japanese Journal of Applied Physics. 61(7). 76002–76002. 10 indexed citations
16.
Tennyson, Jonathan, Sebastian Mohr, Bingqing Liu, et al.. (2022). The 2021 release of the Quantemol database (QDB) of plasma chemistries and reactions. Plasma Sources Science and Technology. 31(9). 95020–95020. 16 indexed citations
17.
Ito, Tomoko, et al.. (2021). Molecular dynamics simulation for reactive ion etching of Si and SiO2 by SF5+ ions. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 39(4). 13 indexed citations
18.
Kino, Hiori, et al.. (2021). Characterization of descriptors in machine learning for data-based sputtering yield prediction. Physics of Plasmas. 28(1). 21 indexed citations
19.
Isobe, Michiro, et al.. (2021). Surface damage formation during atomic layer etching of silicon with chlorine adsorption. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 39(4). 29 indexed citations
20.
Ikawa, Satoshi, Katsuhisa Kitano, & Satoshi Hamaguchi. (2009). Effects of pH on Bacterial Inactivation in Aqueous Solutions due to Low‐Temperature Atmospheric Pressure Plasma Application. Plasma Processes and Polymers. 7(1). 33–42. 480 indexed citations breakdown →

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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