P. C. Chang

434 total citations
34 papers, 391 citations indexed

About

P. C. Chang is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Biomedical Engineering. According to data from OpenAlex, P. C. Chang has authored 34 papers receiving a total of 391 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Condensed Matter Physics, 28 papers in Electronic, Optical and Magnetic Materials and 15 papers in Biomedical Engineering. Recurrent topics in P. C. Chang's work include GaN-based semiconductor devices and materials (31 papers), Ga2O3 and related materials (27 papers) and Photocathodes and Microchannel Plates (10 papers). P. C. Chang is often cited by papers focused on GaN-based semiconductor devices and materials (31 papers), Ga2O3 and related materials (27 papers) and Photocathodes and Microchannel Plates (10 papers). P. C. Chang collaborates with scholars based in Taiwan and China. P. C. Chang's co-authors include Chun Yu, S.J. Chang, Shoou‐Jinn Chang, Y.K. Su, Hao‐Chang Hung, Yun‐Che Wang, C.H. Liu, Ricky W. Chuang, C. H. Kuo and Yan Su and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

P. C. Chang

34 papers receiving 384 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
P. C. Chang Taiwan	13	293	230	156	151	122	34	391
Daniel Le Si Dang France	9	215 0.7×	179 0.8×	150 1.0×	325 2.2×	87 0.7×	16	437
Kenneth J. Vampola United States	8	249 0.8×	108 0.5×	151 1.0×	225 1.5×	61 0.5×	9	363
Moritz Brendel Germany	13	283 1.0×	208 0.9×	155 1.0×	158 1.0×	98 0.8×	25	405
Huiqing Sun China	11	287 1.0×	208 0.9×	127 0.8×	147 1.0×	141 1.2×	50	383
O. Gelhausen Australia	9	217 0.7×	193 0.8×	131 0.8×	220 1.5×	36 0.3×	14	334
Sugita Kenichi Japan	7	297 1.0×	128 0.6×	130 0.8×	118 0.8×	121 1.0×	10	353
Claude Ahyi United States	10	253 0.9×	139 0.6×	272 1.7×	97 0.6×	50 0.4×	14	394
Youhua Zhu China	12	378 1.3×	273 1.2×	171 1.1×	223 1.5×	130 1.1×	46	477
T. Ami Japan	8	200 0.7×	168 0.7×	145 0.9×	244 1.6×	49 0.4×	17	445
Felix Nippert Germany	11	352 1.2×	173 0.8×	175 1.1×	152 1.0×	99 0.8×	28	433

Countries citing papers authored by P. C. Chang

Since Specialization

Citations

This map shows the geographic impact of P. C. Chang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. C. Chang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. C. Chang more than expected).

Fields of papers citing papers by P. C. Chang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. C. Chang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. C. Chang. The network helps show where P. C. Chang may publish in the future.

Co-authorship network of co-authors of P. C. Chang

This figure shows the co-authorship network connecting the top 25 collaborators of P. C. Chang. A scholar is included among the top collaborators of P. C. Chang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. C. Chang. P. C. Chang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lin, Chun‐Yu, Chun‐Liang Lin, Junting Li, et al.. (2023). SiO₂ Aerogel Mixed in Silicone Encapsulant to Improve Chromaticity Coordinate Inconsistencies of WLEDs. IEEE Photonics Technology Letters. 36(4). 207–210. 1 indexed citations

Lin, Chun‐Yu, Chun‐Liang Lin, Jean‐Hong Chen, & P. C. Chang. (2021). Phosphor-Saving SiO₂-Aerogel-Embedded Silicone for Enhancing White LEDs Characteristics. IEEE Electron Device Letters. 43(2). 252–255. 2 indexed citations

Chao, Der-Sheng, et al.. (2014). Characteristics of phase transition in boron‐implanted Ge ₂ Sb ₂ Te ₅ thin films for phase change memory applications. Surface and Interface Analysis. 46(12-13). 1178–1182. 4 indexed citations

Chang, P. C., et al.. (2014). AlGaN/GaN High Electron Mobility Transistors with Multi‐Mg_xN_y/GaN Buffer. Journal of Nanomaterials. 2014(1). 1 indexed citations

Chang, P. C., et al.. (2012). AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO2 dielectrics. Microelectronic Engineering. 104. 105–109. 8 indexed citations

Chang, P. C., et al.. (2011). InGaN Metal-Semiconductor-Metal Photodetectors With Aluminum Nitride Cap Layers. IEEE Journal of Quantum Electronics. 47(8). 1107–1112. 8 indexed citations

Chang, P. C., et al.. (2011). InGaN metal-semiconductor-metal photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers. Journal of Applied Physics. 110(8). 7 indexed citations

Chang, P. C., et al.. (2010). III-Nitride Schottky Rectifiers With an AlGaN/GaN/AlGaN/GaN Quadruple Layer and Their Applications to UV Detection. IEEE Sensors Journal. 10(4). 799–804. 1 indexed citations

Chang, P. C., et al.. (2010). Improved performance of GaN-based Schottky barrier photodetectors by annealing Ir/Pt Schottky contact in O2. Journal of Alloys and Compounds. 504. S429–S431. 18 indexed citations

10.

Chang, P. C., et al.. (2009). Characterization of AlGaN/GaN Metal- Semiconductor-Metal Photodetectors With a Low-Temperature AlGaN Interlayer. IEEE Sensors Journal. 9(6). 723–727. 14 indexed citations

11.

Chang, P. C., et al.. (2009). High-Sensitivity Nitride-Based Ultraviolet Photosensors with a Low-Temperature AlGaN Interlayer. Journal of Electronic Materials. 39(1). 29–33. 1 indexed citations

12.

Chang, P. C., et al.. (2008). The Influence of Vicinal-Cut Sapphire Substrate on AlGaN/GaN Heterostructure by MOCVD. Journal of The Electrochemical Society. 155(6). H369–H369. 3 indexed citations

13.

Chuang, Ricky W., et al.. (2008). Nitride-Based MSM Photodetectors with a HEMT Structure and a Low-Temperature AlGaN Intermediate Layer. Journal of The Electrochemical Society. 155(12). H959–H959. 4 indexed citations

14.

Chang, P. C., et al.. (2007). High-Detectivity Nitride-Based MSM Photodetectors on InGaN–GaN Multiquantum Well With the Unactivated Mg-Doped GaN Layer. IEEE Journal of Quantum Electronics. 43(11). 1060–1064. 14 indexed citations

15.

Chang, P. C., Chun Yu, Shoou‐Jinn Chang, & C. H. Liu. (2007). GaN Schottky photodiodes with annealed Ir/Pt semi-transparent contacts. Thin Solid Films. 516(10). 3324–3327. 6 indexed citations

16.

Lam, Kin-Tak, et al.. (2007). Nitride-based photodetectors with unactivated Mg-doped GaN cap layer. Sensors and Actuators A Physical. 143(2). 191–195. 12 indexed citations

17.

Chang, P. C.. (2007). GaN ultraviolet photosensors capped by low-temperature aluminium nitride layer. Applied Physics Letters. 91(5). 10 indexed citations

18.

Lam, Kin-Tak, et al.. (2007). AlGaN/GaN heterostructure grown on 1∘ -tilt sapphire substrate by MOCVD. Superlattices and Microstructures. 43(3). 147–152. 3 indexed citations

19.

Chuang, Ricky W., S.J. Chang, Y.K. Su, et al.. (2005). Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures. Solid-State Electronics. 49(8). 1347–1351. 36 indexed citations

20.

Yu, Chun, et al.. (2005). In/sub 0.37/Ga/sub 0.63/N metal-semiconductor-metal photodetectors with recessed electrodes. IEEE Photonics Technology Letters. 17(4). 875–877. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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