A. Fejfar

3.2k total citations
150 papers, 2.6k citations indexed

About

A. Fejfar is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, A. Fejfar has authored 150 papers receiving a total of 2.6k indexed citations (citations by other indexed papers that have themselves been cited), including 128 papers in Electrical and Electronic Engineering, 106 papers in Materials Chemistry and 32 papers in Biomedical Engineering. Recurrent topics in A. Fejfar's work include Thin-Film Transistor Technologies (85 papers), Silicon Nanostructures and Photoluminescence (74 papers) and Silicon and Solar Cell Technologies (67 papers). A. Fejfar is often cited by papers focused on Thin-Film Transistor Technologies (85 papers), Silicon Nanostructures and Photoluminescence (74 papers) and Silicon and Solar Cell Technologies (67 papers). A. Fejfar collaborates with scholars based in Czechia, Japan and Switzerland. A. Fejfar's co-authors include J. Kočka, Martin Ledinský, J. Stuchlı́k, Bohuslav Rezek, T. Mates, Jakub Holovský, H. Stuchlı́ková, Stefaan De Wolf, A. Poruba and I. Pelant and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and The Astrophysical Journal.

In The Last Decade

A. Fejfar

146 papers receiving 2.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Fejfar Czechia 25 2.1k 1.8k 547 516 203 150 2.6k
J. Kočka Czechia 27 2.8k 1.4× 2.2k 1.2× 501 0.9× 528 1.0× 453 2.2× 180 3.2k
K. Shimakawa Japan 29 2.1k 1.0× 3.0k 1.6× 519 0.9× 380 0.7× 241 1.2× 193 3.5k
Martin Hundhausen Germany 26 1.4k 0.7× 1.8k 1.0× 494 0.9× 564 1.1× 77 0.4× 85 2.6k
В. А. Володин Russia 24 1.5k 0.7× 1.8k 1.0× 708 1.3× 682 1.3× 91 0.4× 298 2.5k
J. Geurts Germany 24 1.8k 0.9× 1.6k 0.9× 322 0.6× 972 1.9× 233 1.1× 134 2.8k
B. E. White United States 29 2.0k 1.0× 1.3k 0.7× 205 0.4× 412 0.8× 91 0.4× 74 2.5k
F. Gourbilleau France 32 2.1k 1.0× 2.7k 1.4× 1.1k 1.9× 583 1.1× 78 0.4× 204 3.2k
K. B. K. Teo United Kingdom 25 779 0.4× 2.4k 1.3× 879 1.6× 523 1.0× 105 0.5× 60 2.8k
M. Lux‐Steiner Germany 32 2.3k 1.1× 1.9k 1.0× 305 0.6× 863 1.7× 400 2.0× 102 3.0k
W. Fuhs Germany 37 3.7k 1.8× 3.2k 1.8× 299 0.5× 781 1.5× 134 0.7× 232 4.3k

Countries citing papers authored by A. Fejfar

Since Specialization
Citations

This map shows the geographic impact of A. Fejfar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Fejfar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Fejfar more than expected).

Fields of papers citing papers by A. Fejfar

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Fejfar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Fejfar. The network helps show where A. Fejfar may publish in the future.

Co-authorship network of co-authors of A. Fejfar

This figure shows the co-authorship network connecting the top 25 collaborators of A. Fejfar. A scholar is included among the top collaborators of A. Fejfar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Fejfar. A. Fejfar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Landová, Lucie, Zdeňka Hájková, K. Knı́žek, et al.. (2025). Grain-Size-Dependent Stability and Crystallographic Orientation Effects in MAFA Perovskite Thin Films. The Journal of Physical Chemistry Letters. 16(46). 11901–11906.
2.
Živcová, Zuzana Vlčková, et al.. (2025). Structural and Chemical Changes in Si Nanoparticle-Based Anodes in Lithium-Ion Batteries during the (De)lithiation Processes Studied by In Situ Raman Spectroelectrochemistry. ACS Applied Energy Materials. 8(9). 5729–5737. 2 indexed citations
3.
Sonia, Farjana J., Golam Haider, Subrata Ghosh, et al.. (2024). Interface and Morphology Engineered Amorphous Si for Ultrafast Electrochemical Lithium Storage. Small. 20(29). e2311250–e2311250. 7 indexed citations
4.
Nogay, Gizem, Philipp Löper, Franz‐Josef Haug, et al.. (2021). Nanoscale Study of the Hole-Selective Passivating Contacts with High Thermal Budget Using C-AFM Tomography. ACS Applied Materials & Interfaces. 13(8). 9994–10000. 3 indexed citations
5.
Müller, Martin, et al.. (2020). Nucleation and growth of metal-catalyzed silicon nanowires under plasma. Nanotechnology. 31(22). 225601–225601. 5 indexed citations
6.
Kratzer, Markus, Christian Teichert, Soumyadeep Misra, et al.. (2015). Investigating inhomogeneous electronic properties of radial junction solar cells using correlative microscopy. Japanese Journal of Applied Physics. 54(8S1). 08KA08–08KA08. 6 indexed citations
7.
Rath, J.K., et al.. (2014). Fabrication of SnS quantum dots for solar-cell applications: Issues of capping and doping (Phys. Status Solidi B 7/2014). physica status solidi (b). 251(7). 1 indexed citations
8.
Hrabina, Jan, et al.. (2013). Nanopositioning with detection of a standing wave. ASEP. 1 indexed citations
9.
Lazar, Josef, et al.. (2011). Position measurement in standing wave interferometer for metrology of length. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8306. 830607–830607. 4 indexed citations
10.
Rezek, Bohuslav, Jan Čermák, Alexander Kromka, et al.. (2011). Synthesis, structure, and opto-electronic properties of organic-based nanoscale heterojunctions. Nanoscale Research Letters. 6(1). 238–238. 18 indexed citations
11.
Vetushka, Aliaksei, et al.. (2010). Role of the tip induced local anodic oxidation in the conductive atomic force microscopy of mixed phase silicon thin films. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(3-4). 728–731. 4 indexed citations
12.
Kočka, J., T. Mates, H. Stuchlı́ková, J. Stuchlı́k, & A. Fejfar. (2005). Characterization of grain growth, nature and role of grain boundaries in microcrystalline silicon—review of typical features. Thin Solid Films. 501(1-2). 107–112. 29 indexed citations
13.
Kočka, J., A. Fejfar, T. Mates, et al.. (2004). The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 1(5). 1097–1114. 27 indexed citations
14.
Mates, T., A. Fejfar, Martin Ledinský, et al.. (2003). Effect of substrate temperature and hydrogen dilution on thin silicon films deposited at low substrate temperatures. 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of. 2. 1643–1646. 1 indexed citations
15.
Švrček, Vladimír, I. Pelant, J. Kočka, et al.. (2001). Transport anisotropy in microcrystalline silicon studied by measurement of ambipolar diffusion length. Journal of Applied Physics. 89(3). 1800–1805. 25 indexed citations
16.
Kočka, J., A. Fejfar, H. Stuchlı́ková, et al.. (1998). Charge Transport in Microcrystalline Silicon, Relation to Thin Film Solar Cells. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 785–788. 1 indexed citations
17.
Poruba, A., Z. Remeš, J. Špringer, et al.. (1998). Light Scattering in Microcrystalline Thin Film Cells. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 781–784. 1 indexed citations
18.
Fejfar, A., N. Beck, H. Stuchlı́ková, et al.. (1998). On the transport properties of microcrystalline silicon. Journal of Non-Crystalline Solids. 227-230. 1006–1010. 22 indexed citations
19.
Fejfar, A., G. Juška, & J. Kočka. (1996). Comments on space-charge-limited time-of-flight measurements in post-transit mode, applied to a-Si:H based solar cells. Journal of Non-Crystalline Solids. 198-200. 190–193. 4 indexed citations
20.
Fejfar, A., J. Zemek, & Miroslava Trchová. (1995). Hydrogen and nitrogen bonding in silicon nitride layers deposited by laser reactive ablation: Infrared and x-ray photoelectron study. Applied Physics Letters. 67(22). 3269–3271. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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