D. Siche

888 total citations
64 papers, 719 citations indexed

About

D. Siche is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, D. Siche has authored 64 papers receiving a total of 719 indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Electrical and Electronic Engineering, 23 papers in Condensed Matter Physics and 21 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in D. Siche's work include Silicon Carbide Semiconductor Technologies (26 papers), GaN-based semiconductor devices and materials (23 papers) and Semiconductor materials and devices (18 papers). D. Siche is often cited by papers focused on Silicon Carbide Semiconductor Technologies (26 papers), GaN-based semiconductor devices and materials (23 papers) and Semiconductor materials and devices (18 papers). D. Siche collaborates with scholars based in Germany, Russia and Bulgaria. D. Siche's co-authors include D. Schulz, Horst Hartmann, D. Gogova, K. Irmscher, R. Fornari, J. Wollweber, G. Wagner, Detlef Klimm, M. Schmidbauer and M. Albrecht and has published in prestigious journals such as Journal of Materials Science, Journal of Solid State Chemistry and Journal of Crystal Growth.

In The Last Decade

D. Siche

62 papers receiving 700 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Siche Germany 16 507 305 190 158 153 64 719
Christo Guguschev Germany 14 276 0.5× 425 1.4× 185 1.0× 119 0.8× 99 0.6× 55 604
B. T. Melekh Russia 13 244 0.5× 474 1.6× 178 0.9× 156 1.0× 87 0.6× 39 637
R. Bacewicz Poland 16 550 1.1× 709 2.3× 187 1.0× 86 0.5× 152 1.0× 59 867
S. Öberg Sweden 10 272 0.5× 239 0.8× 154 0.8× 242 1.5× 146 1.0× 15 553
Shinzo Yoshikado Japan 14 372 0.7× 475 1.6× 192 1.0× 71 0.4× 109 0.7× 149 755
K. Grasza Poland 14 468 0.9× 428 1.4× 133 0.7× 71 0.4× 231 1.5× 84 722
S. I. Shah United States 13 252 0.5× 294 1.0× 123 0.6× 84 0.5× 142 0.9× 21 508
C.D. Stinespring United States 14 383 0.8× 254 0.8× 81 0.4× 103 0.7× 123 0.8× 39 563
N. A. Ismayilova Azerbaijan 14 356 0.7× 500 1.6× 270 1.4× 95 0.6× 108 0.7× 72 706
V. D. Petrikov Russia 13 392 0.8× 509 1.7× 144 0.8× 221 1.4× 237 1.5× 28 751

Countries citing papers authored by D. Siche

Since Specialization
Citations

This map shows the geographic impact of D. Siche's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Siche with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Siche more than expected).

Fields of papers citing papers by D. Siche

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Siche. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Siche. The network helps show where D. Siche may publish in the future.

Co-authorship network of co-authors of D. Siche

This figure shows the co-authorship network connecting the top 25 collaborators of D. Siche. A scholar is included among the top collaborators of D. Siche based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Siche. D. Siche is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Siche, D., et al.. (2019). Growth of CuFeO2 single crystals by the optical floating-zone technique. Journal of Crystal Growth. 532. 125426–125426. 18 indexed citations
2.
Siche, D., et al.. (2017). Carbon doped GaN layers grown by Pseudo‐Halide Vapour Phase Epitaxy. Crystal Research and Technology. 52(8). 4 indexed citations
3.
Siche, D., et al.. (2016). FTIR exhaust gas analysis of GaN pseudo-halide vapor phase growth. Materials Chemistry and Physics. 177. 12–18. 4 indexed citations
4.
Golka, S., D. Siche, R. Fornari, et al.. (2013). Plasma enhanced growth of GaN single crystalline layers from Ga vapour. Crystal Research and Technology. 48(4). 186–192. 4 indexed citations
5.
Korytov, M., D. Gogova, Zbigniew Galazka, et al.. (2012). A new approach to free-standing GaN using β-Ga2O3 as a substrate. CrystEngComm. 14(24). 8536–8536. 41 indexed citations
6.
Gogova, D., G. Yu. Rudko, D. Siche, et al.. (2011). A new approach to grow C‐doped GaN thick epitaxial layers. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2120–2122. 10 indexed citations
7.
Siche, D., et al.. (2008). Surface preparation of AlN substrates. Crystal Research and Technology. 43(6). 651–655. 10 indexed citations
8.
Siche, D., et al.. (2008). Growth of single crystalline GaN from chlorine‐free gas phase. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1543–1546. 3 indexed citations
9.
Siche, D., et al.. (2007). Growth of GaN crystals from chlorine-free gas phase. Journal of Crystal Growth. 310(5). 916–919. 8 indexed citations
10.
Irmscher, K., et al.. (2006). Formation and properties of stacking faults in nitrogen-doped 4H-SiC. Physica B Condensed Matter. 376-377. 338–341. 30 indexed citations
11.
Gogova, D., D. Siche, R. Fornari, et al.. (2006). Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AlN buffer layer. Semiconductor Science and Technology. 21(5). 702–708. 14 indexed citations
12.
Irmscher, K., et al.. (2003). Influence of nitrogen doping on the properties of 4H–SiC single crystals grown by physical vapor transport. Journal of Crystal Growth. 257(1-2). 75–83. 43 indexed citations
13.
Siche, D., Klaus Böttcher, Ursula Rinas, & Horst Hartmann. (2002). Crystal growth of zinc selenide under μg-conditions. Journal of Crystal Growth. 244(3-4). 249–256. 3 indexed citations
14.
Schulz, D., et al.. (2002). Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes. Materials science forum. 389-393. 67–70. 5 indexed citations
15.
Siche, D., et al.. (2001). Source Material Related Distribution of Defects in 6H-SiC Single Crystals. Materials science forum. 353-356. 263–266. 2 indexed citations
16.
Schulz, D., G. Wagner, J. Dolle, et al.. (1999). Impurity incorporation during sublimation growth of 6H bulk SiC. Journal of Crystal Growth. 198-199. 1024–1027. 11 indexed citations
17.
Siche, D., J. Dolle, T.F.G. Muller, et al.. (1999). Influence of different growth parameters and related conditions on 6H-SiC crystals grown by the modified Lely method. Materials Science and Engineering B. 61-62. 68–72. 17 indexed citations
18.
Wenisch, H., J. Kreissl, K. Schüll, et al.. (1997). Investigation of the interfacial quality and the influence of different substrates in ZnSe homoepitaxy. Journal of Crystal Growth. 174(1-4). 751–756. 3 indexed citations
19.
Wenisch, H., K. Schüll, D. Hommel, et al.. (1996). (Cd,Zn)Se multi-quantum-well LEDs: homoepitaxy on ZnSe substrates and heteroepitaxy on buffer layers. Journal of Crystal Growth. 159(1-4). 26–31. 13 indexed citations
20.
Schönherr, E., et al.. (1996). The vapor composition and vapor pressure of ZnSe from a modified Knudsen technique between 1190 and 1310 K. Berichte der Bunsengesellschaft für physikalische Chemie. 100(11). 1766–1771. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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