L. Ouellet

400 total citations
19 papers, 342 citations indexed

About

L. Ouellet is a scholar working on Electrical and Electronic Engineering, Mechanics of Materials and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, L. Ouellet has authored 19 papers receiving a total of 342 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 10 papers in Mechanics of Materials and 10 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in L. Ouellet's work include Semiconductor materials and devices (11 papers), Copper Interconnects and Reliability (10 papers) and Metal and Thin Film Mechanics (10 papers). L. Ouellet is often cited by papers focused on Semiconductor materials and devices (11 papers), Copper Interconnects and Reliability (10 papers) and Metal and Thin Film Mechanics (10 papers). L. Ouellet collaborates with scholars based in Canada, United States and France. L. Ouellet's co-authors include My Alı El Khakani, D. Brassard, D.K. Sarkar, G. Gagnon, J. F. Currie, S. C. Gujrathi, Mario Caron, J. L. Brebner, J. R. Currie and Stéphane Blain and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Optics Express.

In The Last Decade

L. Ouellet

19 papers receiving 332 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. Ouellet Canada 11 219 183 79 70 38 19 342
J. Dudonis Lithuania 13 147 0.7× 327 1.8× 98 1.2× 71 1.0× 31 0.8× 34 427
S. Patra India 10 176 0.8× 187 1.0× 49 0.6× 21 0.3× 35 0.9× 28 300
Christopher Jezewski United States 13 344 1.6× 219 1.2× 56 0.7× 145 2.1× 46 1.2× 28 432
J. Vilcarromero Brazil 10 252 1.2× 260 1.4× 81 1.0× 35 0.5× 75 2.0× 17 374
Arthur Sherman United States 8 278 1.3× 178 1.0× 118 1.5× 104 1.5× 36 0.9× 13 385
Sebastião Gomes dos Santos Filho Brazil 10 312 1.4× 162 0.9× 45 0.6× 53 0.8× 61 1.6× 62 424
Joris More-Chevalier Czechia 10 151 0.7× 227 1.2× 58 0.7× 88 1.3× 36 0.9× 47 342
Kai‐Erik Elers Finland 10 411 1.9× 214 1.2× 150 1.9× 176 2.5× 30 0.8× 11 459
J. Trube Germany 10 372 1.7× 328 1.8× 42 0.5× 60 0.9× 23 0.6× 22 482
C. B. Samantaray South Korea 9 196 0.9× 345 1.9× 49 0.6× 134 1.9× 19 0.5× 21 419

Countries citing papers authored by L. Ouellet

Since Specialization
Citations

This map shows the geographic impact of L. Ouellet's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Ouellet with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Ouellet more than expected).

Fields of papers citing papers by L. Ouellet

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Ouellet. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Ouellet. The network helps show where L. Ouellet may publish in the future.

Co-authorship network of co-authors of L. Ouellet

This figure shows the co-authorship network connecting the top 25 collaborators of L. Ouellet. A scholar is included among the top collaborators of L. Ouellet based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Ouellet. L. Ouellet is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Pittet, Patrick, et al.. (2012). CMOS buried Quad p-n junction photodetector for multi-wavelength analysis. Optics Express. 20(3). 2053–2053. 27 indexed citations
2.
Brassard, D., My Alı El Khakani, & L. Ouellet. (2007). Substrate biasing effect on the electrical properties of magnetron-sputtered high-k titanium silicate thin films. Journal of Applied Physics. 102(3). 19 indexed citations
3.
Brassard, D., L. Ouellet, & My Alı El Khakani. (2007). Room-Temperature Deposited Titanium Silicate Thin Films for MIM Capacitor Applications. IEEE Electron Device Letters. 28(4). 261–263. 30 indexed citations
4.
Sarkar, D.K., D. Brassard, My Alı El Khakani, & L. Ouellet. (2007). Dielectric properties of sol–gel derived high-k titanium silicate thin films. Thin Solid Films. 515(11). 4788–4793. 41 indexed citations
5.
Brassard, D., D.K. Sarkar, My Alı El Khakani, & L. Ouellet. (2006). Compositional effect on the dielectric properties of high-k titanium silicate thin films deposited by means of a cosputtering process. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 24(3). 600–605. 27 indexed citations
6.
Sarkar, D.K., D. Brassard, My Alı El Khakani, & L. Ouellet. (2005). Single-electron tunneling at room temperature in TixSi1−xO2 nanocomposite thin films. Applied Physics Letters. 87(25). 11 indexed citations
7.
Brassard, D., D.K. Sarkar, My Alı El Khakani, & L. Ouellet. (2004). Tuning the electrical resistivity of pulsed laser deposited TiSiOx thin films from highly insulating to conductive behaviors. Applied Physics Letters. 84(13). 2304–2306. 31 indexed citations
8.
Brassard, D., D.K. Sarkar, My Alı El Khakani, & L. Ouellet. (2004). High-k titanium silicate thin films grown by reactive magnetron sputtering for complementary metal–oxide–semiconductor applications. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 22(3). 851–855. 31 indexed citations
9.
Fortin, Vincent, S. C. Gujrathi, G. Gagnon, et al.. (1999). Effect of in situ plasma oxidation of TiN diffusion barrier for AlSiCu/TiN/Ti metallization structure of integrated circuits. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(2). 423–431. 5 indexed citations
10.
Fortin, Vincent, G. Gagnon, Mario Caron, et al.. (1998). The determination of phases formed in AlSiCu/TiN/Ti contact metallization structure of integrated circuits by x-ray diffraction. Journal of Applied Physics. 83(1). 132–138. 6 indexed citations
11.
Ouellet, L., Yves Tremblay, G. Gagnon, et al.. (1996). The effect of an oxygen plasma exposure on the reliability of a Ti/TiN contact metallization. Journal of Applied Physics. 79(8). 4438–4443. 3 indexed citations
12.
Ouellet, L., Yves Tremblay, G. Gagnon, et al.. (1996). Effect of the Ti/TiN bilayer barrier and its surface treatment on the reliability of a Ti/TiN/AlSiCu/TiN contact metallization. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(6). 3502–3508. 1 indexed citations
13.
Ouellet, L., Yves Tremblay, G. Gagnon, et al.. (1996). The effect of the Ti glue layer in an integrated Ti/TiN/Ti/AlSiCu/TiN contact metallization process. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(4). 2627–2635. 3 indexed citations
14.
Caron, Mario, G. Gagnon, Vincent Fortin, et al.. (1996). Calculation of a Al–Ti–O–N quaternary isotherm diagram for the prediction of stable phases in TiN/Al alloy contact metallization. Journal of Applied Physics. 79(8). 4468–4470. 14 indexed citations
15.
Gagnon, G., S. C. Gujrathi, Mario Caron, et al.. (1996). Effect of the oxidation of TiN on the stability of the Al/TiN interface. Journal of Applied Physics. 80(1). 188–195. 8 indexed citations
16.
Jackson, Scott C., et al.. (1995). Collimated contact and barrier layers for sub 0.5 μm CVD W-filled contact holes. Thin Solid Films. 270(1-2). 522–525. 5 indexed citations
17.
Иванов, Д. В., et al.. (1995). Structural and dielectric properties of spin-on barium-strontium titanate thin films. Journal of Applied Physics. 77(6). 2666–2671. 30 indexed citations
18.
Gagnon, G., et al.. (1994). Characterization of reactively evaporated TiN layers for diffusion barrier applications. Journal of Applied Physics. 75(3). 1565–1570. 49 indexed citations
19.
Gagnon, G., J. F. Currie, J. L. Brebner, S. C. Gujrathi, & L. Ouellet. (1993). The use of elastic recoil detection for stoichiometry determination of reactively evaporated TiN layers. Journal of Applied Physics. 74(6). 4233–4235. 1 indexed citations

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