Seung-Jae Lee

404 total citations
21 papers, 222 citations indexed

About

Seung-Jae Lee is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Seung-Jae Lee has authored 21 papers receiving a total of 222 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Condensed Matter Physics, 10 papers in Electronic, Optical and Magnetic Materials and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Seung-Jae Lee's work include GaN-based semiconductor devices and materials (21 papers), Ga2O3 and related materials (9 papers) and Semiconductor Quantum Structures and Devices (8 papers). Seung-Jae Lee is often cited by papers focused on GaN-based semiconductor devices and materials (21 papers), Ga2O3 and related materials (9 papers) and Semiconductor Quantum Structures and Devices (8 papers). Seung-Jae Lee collaborates with scholars based in South Korea, United States and Türkiye. Seung-Jae Lee's co-authors include Jong Hyeob Baek, Cheul‐Ro Lee, In‐Hwan Lee, Lee‐Woon Jang, Jin-Woo Ju, Dae‐Woo Jeon, Tak Jeong, Jin‐Kyu Yang, A. Y. Polyakov and Inseok Seo and has published in prestigious journals such as Applied Physics Letters, Optics Express and Journal of Physics D Applied Physics.

In The Last Decade

Seung-Jae Lee

20 papers receiving 211 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Seung-Jae Lee South Korea 10 176 109 103 67 64 21 222
Lukas Schade Germany 7 240 1.4× 99 0.9× 94 0.9× 93 1.4× 44 0.7× 11 272
Chu‐Li Chao Taiwan 10 298 1.7× 201 1.8× 140 1.4× 106 1.6× 60 0.9× 19 330
A. Ougazzaden France 9 218 1.2× 161 1.5× 125 1.2× 127 1.9× 55 0.9× 18 326
Jean-Marc Bethoux France 7 147 0.8× 189 1.7× 67 0.7× 140 2.1× 82 1.3× 16 321
Hao-Chung Kuo Taiwan 12 230 1.3× 146 1.3× 111 1.1× 143 2.1× 60 0.9× 27 356
F. Ranalli United Kingdom 11 261 1.5× 120 1.1× 116 1.1× 100 1.5× 77 1.2× 20 309
Sugita Kenichi Japan 7 297 1.7× 118 1.1× 128 1.2× 130 1.9× 121 1.9× 10 353
S. Nagata Germany 10 321 1.8× 133 1.2× 166 1.6× 122 1.8× 154 2.4× 16 357
Chia-Ming Lee Taiwan 4 304 1.7× 145 1.3× 132 1.3× 71 1.1× 53 0.8× 5 322
R. Debnath India 6 250 1.4× 202 1.9× 171 1.7× 102 1.5× 134 2.1× 10 338

Countries citing papers authored by Seung-Jae Lee

Since Specialization
Citations

This map shows the geographic impact of Seung-Jae Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Seung-Jae Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Seung-Jae Lee more than expected).

Fields of papers citing papers by Seung-Jae Lee

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Seung-Jae Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Seung-Jae Lee. The network helps show where Seung-Jae Lee may publish in the future.

Co-authorship network of co-authors of Seung-Jae Lee

This figure shows the co-authorship network connecting the top 25 collaborators of Seung-Jae Lee. A scholar is included among the top collaborators of Seung-Jae Lee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Seung-Jae Lee. Seung-Jae Lee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lee, Seung-Jae, Seong Ran Jeon, Sung Hoon Jung, et al.. (2023). Realization of Low Dislocation Density AlN on Patterned Sapphire Substrate by Hydride Vapor‐Phase Epitaxy for Deep Ultraviolet Light‐Emitting Diodes. physica status solidi (a). 220(16).
2.
Lee, Seung-Jae, et al.. (2021). High Quality AlN Layer Grown on Patterned Sapphire Substrates by Hydride Vapor-Phase Epitaxy: A Route for Cost Efficient AlN Templates for Deep Ultraviolet Light Devices. Journal of Nanoscience and Nanotechnology. 21(9). 4881–4885. 2 indexed citations
3.
Lee, Seung-Jae, Seong-Ran Jeon, Jong Hyeob Baek, et al.. (2018). Impact of Al Pre-Deposition Layer on Crystalline Quality of GaN Grown on Si(111) Substrates. Journal of Nanoscience and Nanotechnology. 19(2). 892–896. 6 indexed citations
4.
Lee, Kwang Jae, Jaeyi Chun, Semi Oh, et al.. (2016). Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer. Optics Express. 24(5). 4391–4391. 11 indexed citations
5.
Lee, Seung-Jae, et al.. (2015). High Brightness, Large Scale GaN Based Light-Emitting Diode Grown on 8-Inch Si Substrate. ECS Journal of Solid State Science and Technology. 4(8). Q92–Q95. 2 indexed citations
6.
Jang, Lee‐Woon, Dae‐Woo Jeon, Trilochan Sahoo, et al.. (2012). Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO_2 nanoparticles. Optics Express. 20(3). 2116–2116. 36 indexed citations
7.
Jang, Lee‐Woon, Jin-Woo Ju, Dae‐Woo Jeon, et al.. (2012). Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer. Optics Express. 20(6). 6036–6036. 19 indexed citations
8.
Ju, Jin-Woo, Jong Hyeob Baek, Seung-Jae Lee, et al.. (2012). Fabrication and characterization of high efficiency green nanopillar LED. Journal of Crystal Growth. 370. 332–335. 4 indexed citations
9.
10.
Lee, Seung-Jae, et al.. (2011). High-Brightness GaN-Based Light-Emitting Diodes on Si Using Wafer Bonding Technology. Applied Physics Express. 4(6). 66501–66501. 26 indexed citations
11.
Jang, Lee‐Woon, Jin-Woo Ju, Dae‐Woo Jeon, et al.. (2010). Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7945. 794511–794511. 7 indexed citations
12.
Lee, Chul‐Ho, Young Joon Hong, Yong‐Jin Kim, et al.. (2010). GaN/ZnO Nanotube Heterostructure Light-Emitting Diodes Fabricated on Si. IEEE Journal of Selected Topics in Quantum Electronics. 17(4). 966–970. 8 indexed citations
13.
Kim, Jae‐Hun, Seung-Jae Lee, & Si‐Hyun Park. (2010). InGaN-Based Resonant-Cavity Light-Emitting Diodes with a ZrO2/SiO2 Distributed Bragg Reflector and Metal Reflector. Japanese Journal of Applied Physics. 49(12R). 122102–122102. 9 indexed citations
14.
Park, Tae‐Young, Seong-Ju Park, Seung-Jae Lee, et al.. (2009). Nanopatterned aluminum nitride template for high efficiency light-emitting diodes. Optics Express. 17(17). 14791–14791. 16 indexed citations
15.
Lee, Joonhee, Sungmo Ahn, Dong-Uk Kim, et al.. (2009). GaN light-emitting diode with monolithically integrated photonic crystals and angled sidewall deflectors for efficient surface emission. Applied Physics Letters. 94(10). 19 indexed citations
16.
Lee, Hyun Haeng, et al.. (2009). Surface and Electrical Properties of Inductively-coupledPlasma-etched N-face n-GaN and a Method of Reducing the OhmicContact Resistance of Plasma-damaged N-face n-GaN. Journal of the Korean Physical Society. 55(3(1)). 1140–1144. 1 indexed citations
17.
Jeon, Seong‐Ran, Seung-Jae Lee, Jong Hyeob Baek, et al.. (2008). Effect of V-shaped defects on structural and optical properties of AlGaN/InGaN multiple quantum wells. Journal of Physics D Applied Physics. 41(13). 132006–132006. 14 indexed citations
18.
Kang, Dong‐Hun, Dongwook Kim, Seon‐Ho Lee, et al.. (2008). Fabrication and Characterization of InxGa1-xN Quantum Dots Using Nitridation of Nano-alloyed Droplet Growth Technique. Japanese Journal of Applied Physics. 47(4S). 3053–3053. 3 indexed citations
19.
Lee, Seung-Jae, et al.. (2003). Growth and characterization of In0.28Ga0.72N/GaN multiple-quantum wells on Si(111). Journal of Crystal Growth. 249(1-2). 65–71. 10 indexed citations
20.
Seo, Inseok, et al.. (2002). The role of AlN buffer layer in AlxGa1−xN/GaN heterostructures with x from 0.35 to 0.5 grown on sapphire (0001). Journal of Crystal Growth. 241(3). 297–303. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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