Kohei Ueno

1.9k total citations
116 papers, 1.4k citations indexed

About

Kohei Ueno is a scholar working on Condensed Matter Physics, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, Kohei Ueno has authored 116 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 74 papers in Condensed Matter Physics, 39 papers in Materials Chemistry and 33 papers in Mechanics of Materials. Recurrent topics in Kohei Ueno's work include GaN-based semiconductor devices and materials (71 papers), Metal and Thin Film Mechanics (33 papers) and ZnO doping and properties (32 papers). Kohei Ueno is often cited by papers focused on GaN-based semiconductor devices and materials (71 papers), Metal and Thin Film Mechanics (33 papers) and ZnO doping and properties (32 papers). Kohei Ueno collaborates with scholars based in Japan, United Kingdom and China. Kohei Ueno's co-authors include Hiroshi Fujioka, Atsushi Kobayashi, Jitsuo Ohta, Yasuaki Arakawa, K. Komura, Masayoshi Yamamoto, A. Koma, Masao Yagi, Makoto Sakurai and Xabier de Aretxabala and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Kohei Ueno

114 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Kohei Ueno Japan 20 834 554 423 351 289 116 1.4k
J. Garcı́a López Spain 20 161 0.2× 604 1.1× 149 0.4× 533 1.5× 150 0.5× 142 1.6k
Hillary L. Smith United States 20 84 0.1× 381 0.7× 176 0.4× 521 1.5× 34 0.1× 51 1.4k
I. L. F. Ray Germany 20 90 0.1× 1.4k 2.6× 62 0.1× 327 0.9× 170 0.6× 31 2.2k
U. Flechsig Switzerland 18 319 0.4× 437 0.8× 325 0.8× 366 1.0× 11 0.0× 52 1.5k
F. Abel France 22 162 0.2× 393 0.7× 95 0.2× 259 0.7× 119 0.4× 64 1.2k
J. P. Kirkland United States 18 257 0.3× 540 1.0× 306 0.7× 220 0.6× 39 0.1× 42 1.1k
Yutaka Sugita Japan 20 329 0.4× 353 0.6× 971 2.3× 357 1.0× 296 1.0× 85 1.8k
Kheirreddine Lebbou France 23 92 0.1× 1.3k 2.4× 159 0.4× 954 2.7× 75 0.3× 137 2.1k
L.R. Greenwood United States 17 110 0.1× 453 0.8× 36 0.1× 72 0.2× 26 0.1× 67 1.0k

Countries citing papers authored by Kohei Ueno

Since Specialization
Citations

This map shows the geographic impact of Kohei Ueno's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kohei Ueno with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kohei Ueno more than expected).

Fields of papers citing papers by Kohei Ueno

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kohei Ueno. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kohei Ueno. The network helps show where Kohei Ueno may publish in the future.

Co-authorship network of co-authors of Kohei Ueno

This figure shows the co-authorship network connecting the top 25 collaborators of Kohei Ueno. A scholar is included among the top collaborators of Kohei Ueno based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kohei Ueno. Kohei Ueno is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Ueno, Kohei, et al.. (2024). Hole Conduction Mechanism in In–Mg‐Codoped GaN Prepared via Pulsed Sputtering Deposition. physica status solidi (a). 221(9). 1 indexed citations
4.
Kobayashi, Atsushi, et al.. (2023). Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering. Applied Physics Express. 17(1). 11002–11002. 12 indexed citations
5.
Ueno, Kohei, et al.. (2023). Positive impurity size effect in degenerate Sn-doped GaN prepared by pulsed sputtering. Applied Physics Letters. 122(8). 6 indexed citations
6.
Ueno, Kohei, et al.. (2023). Pulsed sputtering selective epitaxial formation of highly degenerate n-type GaN ohmic contacts for GaN HEMT applications. Applied Physics Express. 17(1). 11006–11006. 3 indexed citations
7.
Ueno, Kohei, et al.. (2023). Preparation of degenerate n-type AlxGa1−xN (0 < x ≤ 0.81) with record low resistivity by pulsed sputtering deposition. Applied Physics Letters. 122(23). 8 indexed citations
8.
Ueno, Kohei, et al.. (2022). Schottky barrier height engineering in vertical p-type GaN Schottky barrier diodes for high-temperature operation up to 800 K. Applied Physics Letters. 121(23). 5 indexed citations
9.
Kobayashi, Atsushi, Takahito Takeda, Masaki Kobayashi, et al.. (2022). Crystal‐Phase Controlled Epitaxial Growth of NbNx Superconductors on Wide‐Bandgap AlN Semiconductors. Advanced Materials Interfaces. 9(31). 7 indexed citations
10.
Sakurai, Yuya, Kohei Ueno, Atsushi Kobayashi, et al.. (2021). High Electron Mobility AlN on Sapphire (0001) with a Low Dislocation Density Prepared via Sputtering and High‐Temperature Annealing. physica status solidi (a). 218(16). 3 indexed citations
11.
Ueno, Kohei, et al.. (2021). Pulsed sputtering growth of heavily Si-doped GaN (20 2 1) for tunneling junction contacts on semipolar InGaN (20 2 1) LEDs. Applied Physics Express. 14(5). 51011–51011. 2 indexed citations
12.
Sakurai, Yuya, Kohei Ueno, Atsushi Kobayashi, et al.. (2021). High Electron Mobility AlN on Sapphire (0001) with a Low Dislocation Density Prepared via Sputtering and High‐Temperature Annealing. physica status solidi (a). 218(16). 1 indexed citations
13.
Kobayashi, Atsushi, et al.. (2020). Growth of InN ultrathin films on AlN for the application to field-effect transistors. AIP Advances. 10(12). 1 indexed citations
14.
Kobayashi, Atsushi, Kohei Ueno, & Hiroshi Fujioka. (2020). Autonomous growth of NbN nanostructures on atomically flat AlN surfaces. Applied Physics Letters. 117(23). 12 indexed citations
15.
Ma, Bei, Kohei Ueno, Atsushi Kobayashi, et al.. (2020). Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN. Applied Physics Letters. 117(19). 7 indexed citations
16.
Kobayashi, Atsushi, Kohei Ueno, & Hiroshi Fujioka. (2020). Coherent epitaxial growth of superconducting NbN ultrathin films on AlN by sputtering. Applied Physics Express. 13(6). 61006–61006. 18 indexed citations
17.
Kobayashi, Atsushi, et al.. (2019). AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature. Scientific Reports. 9(1). 6254–6254. 4 indexed citations
18.
Kobayashi, Atsushi, et al.. (2019). Improving the electron mobility of polycrystalline InN grown on glass substrates using AlN crystalline orientation layers. Journal of Applied Physics. 126(7). 2 indexed citations
19.
Ueno, Kohei, et al.. (2019). Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition. Scientific Reports. 9(1). 20242–20242. 20 indexed citations
20.
Ueno, Kohei, et al.. (2019). Wide range doping controllability of p-type GaN films prepared via pulsed sputtering. Applied Physics Letters. 114(3). 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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