S. Usui

2.4k total citations · 1 hit paper
44 papers, 2.0k citations indexed

About

S. Usui is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computational Mechanics. According to data from OpenAlex, S. Usui has authored 44 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 21 papers in Materials Chemistry and 16 papers in Computational Mechanics. Recurrent topics in S. Usui's work include Thin-Film Transistor Technologies (24 papers), Silicon and Solar Cell Technologies (17 papers) and Laser Material Processing Techniques (14 papers). S. Usui is often cited by papers focused on Thin-Film Transistor Technologies (24 papers), Silicon and Solar Cell Technologies (17 papers) and Laser Material Processing Techniques (14 papers). S. Usui collaborates with scholars based in Japan, United States and Taiwan. S. Usui's co-authors include Toshiyuki Sameshima, Dharam Pal Gosain, M. Sekiya, Harry E. Ruda, Shigetaka Tomiya, Masaki Hara, Masanori Kikuchi, Takashi Noguchi, N. Watanabe and Yoshinori Hayafuji and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

S. Usui

42 papers receiving 1.9k citations

Hit Papers

Growth of silicon nanowires via gold/silane vapor–liquid–... 1997 2026 2006 2016 1997 100 200 300 400 500
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Growth of silicon nanowires via gold/silane vapor–liquid–solid reaction
    1997 546 citations Dharam Pal Gosain, Shigetaka Tomiya et al. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Usui Japan 21 1.6k 1.2k 733 382 349 44 2.0k
Toshiyuki Sameshima Japan 28 2.8k 1.8× 2.0k 1.6× 560 0.8× 293 0.8× 585 1.7× 198 3.1k
D. W. Dong United States 21 1.4k 0.9× 963 0.8× 335 0.5× 260 0.7× 106 0.3× 40 1.6k
Giampiero Amato Italy 20 1.0k 0.7× 1.3k 1.1× 716 1.0× 230 0.6× 124 0.4× 125 1.7k
Masakiyo Matsumura Japan 23 1.7k 1.1× 1.2k 1.0× 247 0.3× 167 0.4× 258 0.7× 160 1.9k
G. González-Dı́az Spain 27 2.1k 1.3× 1.3k 1.0× 286 0.4× 877 2.3× 215 0.6× 167 2.4k
James S. Im United States 17 1.3k 0.8× 985 0.8× 366 0.5× 78 0.2× 559 1.6× 68 1.6k
M. Voelskow Germany 18 918 0.6× 621 0.5× 180 0.2× 286 0.7× 200 0.6× 124 1.2k
W. Vandervorst Belgium 21 1.2k 0.8× 325 0.3× 315 0.4× 650 1.7× 263 0.8× 98 1.4k
J. L. Batstone United States 19 1.0k 0.7× 604 0.5× 281 0.4× 662 1.7× 184 0.5× 58 1.4k
Daniel Recht United States 16 994 0.6× 837 0.7× 288 0.4× 392 1.0× 286 0.8× 24 1.2k

Countries citing papers authored by S. Usui

Since Specialization
Citations

This map shows the geographic impact of S. Usui's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Usui with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Usui more than expected).

Fields of papers citing papers by S. Usui

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Usui. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Usui. The network helps show where S. Usui may publish in the future.

Co-authorship network of co-authors of S. Usui

This figure shows the co-authorship network connecting the top 25 collaborators of S. Usui. A scholar is included among the top collaborators of S. Usui based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Usui. S. Usui is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gosain, Dharam Pal, Takashi Noguchi, & S. Usui. (2000). High Mobility Thin Film Transistors Fabricated on a Plastic Substrate at a Processing Temperature of 110°C. Japanese Journal of Applied Physics. 39(3A). L179–L179. 89 indexed citations
2.
Gosain, Dharam Pal, et al.. (1997). Growth of silicon nanowires via gold/silane vapor–liquid–solid reaction. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 15(3). 554–557. 546 indexed citations breakdown →
3.
Gosain, Dharam Pal, et al.. (1997). Control of the Size and Position of Silicon Nanowires Grown via the Vapor-Liquid-Solid Technique. Japanese Journal of Applied Physics. 36(10R). 6204–6204. 56 indexed citations
4.
Gosain, Dharam Pal, et al.. (1995). Nanoscale silicon whiskers formed by silane/gold reaction at 335 °C. Materials Letters. 24(1-3). 109–112. 9 indexed citations
5.
Sameshima, Toshiyuki & S. Usui. (1992). Pulsed Laser-Induced Crystallization and Amorphization of SiGe Films.. MRS Proceedings. 258. 7 indexed citations
6.
Sameshima, Toshiyuki & S. Usui. (1991). Pulsed Laser-Induced Amorphization of Silicon Films. MRS Proceedings. 235. 1 indexed citations
7.
Sameshima, Toshiyuki, Masaki Hara, & S. Usui. (1990). Pulsed Laser-Induced Amorphization of Polycrystalline Silicon Film. Japanese Journal of Applied Physics. 29(4A). L548–L548. 24 indexed citations
8.
Sameshima, Toshiyuki, Masaki Hara, Naoki Sano, & S. Usui. (1990). XeCl Excimer Laser-Induced Amorphization and Crystllization of Silicon Films.
9.
Sameshima, Toshiyuki, et al.. (1988). In Situ Observation of Pulsed Laser Doping. Japanese Journal of Applied Physics. 27(10A). L1935–L1935. 8 indexed citations
10.
Sameshima, Toshiyuki & S. Usui. (1987). Analysis of Dopant Diffusion in Molten Silicon Induced by a Pulsed Excimer Laser. Japanese Journal of Applied Physics. 26(7A). L1208–L1208. 20 indexed citations
11.
Sameshima, Toshiyuki, S. Usui, & M. Sekiya. (1987). Laser-induced melting of predeposited impurity doping technique used to fabricate shallow junctions. Journal of Applied Physics. 62(2). 711–713. 61 indexed citations
12.
Sameshima, Toshiyuki & S. Usui. (1986). XeCl Excimer Laser Annealing Used to Fabricate Poly-Si Tfts. MRS Proceedings. 71. 40 indexed citations
13.
Hayafuji, Yoshinori, S. Usui, Seiji Kawado, et al.. (1983). Laterally seeded regrowth of silicon over SiO2 through strip electron beam irradiation. Applied Physics Letters. 43(5). 473–475. 26 indexed citations
14.
Hayafuji, Yoshinori, Kazuo Kajiwara, & S. Usui. (1982). Shrinkage and growth of oxidation stacking faults during thermal nitridation of silicon and oxidized silicon. Journal of Applied Physics. 53(12). 8639–8646. 35 indexed citations
15.
Noguchi, Takashi, et al.. (1982). Anomalous Variations in Conductivity of a-Si: H with Nitrogen Doping. Japanese Journal of Applied Physics. 21(8A). L485–L485. 32 indexed citations
16.
Usui, S., et al.. (1981). A contact-type linear sensor with a GD a-Si:H photodetector array. 313–316. 6 indexed citations
17.
Usui, S., et al.. (1980). Properties of a-Si : H : F deposited in SiF4/SiH4/Ar Gas mixtures by a glow-discharge technique. Journal of Non-Crystalline Solids. 41(2). 151–159. 9 indexed citations
18.
Usui, S. & Masanori Kikuchi. (1979). Properties of heavily doped GDSi with low resistivity. Journal of Non-Crystalline Solids. 34(1). 1–11. 94 indexed citations
19.
Watanabe, N. & S. Usui. (1967). Photoluminescence Spectra of ZnTe with Anomalous Temperature Dependence. Japanese Journal of Applied Physics. 6(10). 1253–1254. 11 indexed citations
20.
Watanabe, N. & S. Usui. (1966). Near Infrared Absorption in Phosphorus DopedP-Type ZnTe. Japanese Journal of Applied Physics. 5(7). 569–577. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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