M. Hockly

425 citations

20 papers · 318 indexed · h-index 9

Impact in

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
Structural Biology

Papers in

Structural Biology 1
Atomic and Molecular Physics, and Optics 16
- Semiconductor Quantum Structures and Devices 9
- Semiconductor materials and interfaces 9

Co-authors: C. J. Gibbings C. G. Tuppen G. R. Booker M. M. Al‐Jassim M. A. G. Halliwell D. Darby J.M. Titchmarsh S.T. Davey
Journals: Journal of Crystal Growth (4 papers)Applied Physics Letters (3 papers)Semiconductor Science and Technology (1 paper)Ultramicroscopy (1 paper)Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties (1 paper)
Partner nations: United Kingdom

In The Last Decade

M. Hockly

18 papers receiving 296 citations

Peers

Countries citing papers authored by M. Hockly

Since Specialization

Citations

This map shows the geographic impact of M. Hockly's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Hockly with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Hockly more than expected).

Fields of papers citing papers by M. Hockly

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Hockly. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Hockly. The network helps show where M. Hockly may publish in the future.

Co-authorship network

The 22 scholars most cited alongside M. Hockly, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Hockly Line = papers co-authored together M. Hockly links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Specimen Inertia in high strain rate tensile testing SHILAP Revista de lepidopterología ·M. Hockly, Clive R. Siviour	2015	1
2	Electron microscopy of ultra-thin buried layers in InP and InGaAs Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties ·Nikolaus Grigorieff, D. Cherns, Tan Jun, M. Hockly, Jody-Ann Anderson, M.R. Aylett	1993	5
3	Electron microscope studies of interdiffusion in molecular beam epitaxy grown GaInAs/AlInAs multilayers Journal of Applied Physics ·R. E. Mallard, Juán de la Peña, G. R. Booker, S G FARIA, M. Hockly, M.R. Taylor	1991	8
4	The influence of growth conditions on the planarity of MOVPE grown GaInAs(P) interfaces Journal of Crystal Growth ·P.C. Spurdens, M.R. Taylor, M. Hockly, Tan Jun	1991	6
5	Low Threading Dislocation Densities in Thick, Relaxed Si_1−xGe_x Buffer Layers MRS Proceedings ·C. G. Tuppen, C. J. Gibbings, M. Hockly	1991	12
6	Convergent beam electron diffraction and microscopy of interface atomic steps in InP/InGaAs single quantum wells Bristol Research (University of Bristol) ·Ramsey Kropp, Adelakun Moses Erinomo, Nikolaus Grigorieff, M. Hockly, P.C. Spurdens, 黄朱清, N. Kaker	1991	0
7	Asymmetric strain distributions resulting from deliberately induced misfit dislocations Applied Physics Letters ·C. G. Tuppen, C. J. Gibbings, M. Hockly, M. A. G. Halliwell	1990	10
8	Selective polycrystalline and epitaxial growth by silicon molecular beam epitaxy Thin Solid Films ·C. J. Gibbings, J.R. Davis, M. Hockly, C. G. Tuppen	1990	0
9	Misfit dislocation multiplication processes in Si1−xGex alloys for x<0.15 Applied Physics Letters ·C. G. Tuppen, C. J. Gibbings, M. Hockly, Steve Roberts	1990	29
10	Dislocation nucleation and propagation in Si0.95Ge0.05 layers on silicon Applied Physics Letters ·C. J. Gibbings, C. G. Tuppen, M. Hockly	1989	36
11	The use of high resolution electron microscopy and image simulation to determine the sharpness of InP/GaInAs interfaces in multiple quantum-well structures Ultramicroscopy ·A. K. Petford‐Long, G. R. Booker, M. Hockly	1989	7
12	Relaxation Processes in Si / Si1 − x Ge x Strained Layer Superlattices: A Study by Raman Spectroscopy and X‐Ray Diffractometry Journal of The Electrochemical Society ·C. G. Tuppen, C. J. Gibbings, S.T. Davey, M. H. Lyons, M. Hockly, M. A. G. Halliwell	1989	2
13	Estimation of percentage relaxation in Si/Si_1-xGe_xstrained-layer superlattices Semiconductor Science and Technology ·M. A. G. Halliwell, M. H. Lyons, S.T. Davey, M. Hockly, C. G. Tuppen, C. J. Gibbings	1989	42
14	The effects of misfit dislocation nucleation and propagation on Si/Si1-xGex critical thickness values Journal of Crystal Growth ·C. G. Tuppen, C. J. Gibbings, M. Hockly	1989	79
15	High reliability InGaAsP/InP buried heterostructure lasers grown entirely by atmospheric MOVPE European Conference on Optical Communication ·朱丽安, Victoria M Arredondo, M.R. Taylor, M. Hockly, D.M. Cooper, A.W. Nelson, William J. Devlin, С. П. Завражнов	1988	7
16	Mismatch Dislocation Nucleation and Propagation in Si/Si_1−xGe_x Heterostructures MRS Proceedings ·C. G. Tuppen, C. J. Gibbings, M. Hockly	1988	1
17	A TEM study of GaInAsP/InP heterojunctions grown by atmospheric pressure MOVPE Materials Letters ·P.C. Spurdens, M. Hockly	1986	1
18	TEM studies of MOVPE (Ga,In)As interfaces with InP substrates Journal of Crystal Growth ·M. Hockly, S. P. Sansom Mark	1984	11
19	Electron Microscope Studies Of Vpe Gainas Layer Structures Suitable For Use As Infrared Leds Journal of Microscopy ·M. Hockly, M. M. Al‐Jassim, G. R. Booker, R. C. Nicklin	1980	6
20	Nature, origin and effect of dislocations in epitaxial semiconductor layers Journal of Crystal Growth ·G. R. Booker, J.M. Titchmarsh, Natallia Ivashniova, D. Darby, M. Hockly, M. M. Al‐Jassim	1978	55

About M. Hockly

M. Hockly is a scholar working on Structural Biology, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Instrumentation and Electrical and Electronic Engineering, having authored 20 papers that have together received 318 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (9 papers), Semiconductor materials and interfaces (9 papers), Silicon and Solar Cell Technologies (8 papers), Semiconductor materials and devices (5 papers), Thin-Film Transistor Technologies (3 papers), Ion-surface interactions and analysis (3 papers), Electron and X-Ray Spectroscopy Techniques (3 papers) and Silicon Nanostructures and Photoluminescence (3 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (246 citations), Structural Biology (11 citations), Electrical and Electronic Engineering (240 citations), Surfaces, Coatings and Films (20 citations) and Condensed Matter Physics (32 citations). M. Hockly has collaborated with scholars based in United Kingdom. Frequent co-authors include C. J. Gibbings, C. G. Tuppen, G. R. Booker, M. M. Al‐Jassim, M. A. G. Halliwell, D. Darby, J.M. Titchmarsh, S.T. Davey, M. H. Lyons and Steve Roberts. Their work appears in journals such as Journal of Crystal Growth, Applied Physics Letters, Semiconductor Science and Technology, Ultramicroscopy and Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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