Shaoyan Yang

414 total citations
46 papers, 336 citations indexed

About

Shaoyan Yang is a scholar working on Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Shaoyan Yang has authored 46 papers receiving a total of 336 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Condensed Matter Physics, 22 papers in Materials Chemistry and 18 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Shaoyan Yang's work include GaN-based semiconductor devices and materials (32 papers), ZnO doping and properties (17 papers) and Ga2O3 and related materials (17 papers). Shaoyan Yang is often cited by papers focused on GaN-based semiconductor devices and materials (32 papers), ZnO doping and properties (17 papers) and Ga2O3 and related materials (17 papers). Shaoyan Yang collaborates with scholars based in China, United States and United Kingdom. Shaoyan Yang's co-authors include Zhanguo Wang, Lianshan Wang, Hongyuan Wei, Xianglin Liu, Guijuan Zhao, Xianglin Liu, Qin-Sheng Zhu, Huijie Li, Zhe Chen and Xiaoqing Xu and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Shaoyan Yang

41 papers receiving 315 citations

Peers

Shaoyan Yang

CMP

EOMM

EEE

Xuecheng Wei China

Ferrán Vallés Spain

V. Leca Romania

Sammy Saber United States

P. Misra Germany

P. Chen China

Yuma Todoroki Japan

D. Shiell United States

Shuichi Kubo Japan

H. S. Craft United States

Xuecheng Wei China

Shaoyan Yang

99 ×0.4

CMP

248 ×1.3

70 ×0.5

EOMM

142 ×1.3

EEE

104 ×1.5

Citations per year, relative to Shaoyan Yang Shaoyan Yang (= 1×) peers Xuecheng Wei

Countries citing papers authored by Shaoyan Yang

Since Specialization

Citations

This map shows the geographic impact of Shaoyan Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shaoyan Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shaoyan Yang more than expected).

Fields of papers citing papers by Shaoyan Yang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shaoyan Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shaoyan Yang. The network helps show where Shaoyan Yang may publish in the future.

Co-authorship network of co-authors of Shaoyan Yang

This figure shows the co-authorship network connecting the top 25 collaborators of Shaoyan Yang. A scholar is included among the top collaborators of Shaoyan Yang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shaoyan Yang. Shaoyan Yang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Zhang, Junshan, Arun Murali, Yuanpei Lan, et al.. (2024). Advancements in organic pollutant remediation: The role of nitrogen-doped rGO-CeO2 in photocatalytic efficiency enhancement. Colloids and Surfaces A Physicochemical and Engineering Aspects. 685. 133282–133282. 15 indexed citations

Li, Chengming, Shaoyan Yang, Huijie Li, et al.. (2024). ZrN films with low resistivity under different chamber pressures by MOCVD. CrystEngComm. 26(12). 1694–1700.

Yang, Shaoyan, Chengming Li, Xianglin Liu, et al.. (2022). MOCVD growth of ZrN thin films on GaN/Si templates and the effect of substrate temperature on growth mode, stress state, and electrical properties. Journal of Physics D Applied Physics. 55(40). 404003–404003. 5 indexed citations

Li, Wenlong, et al.. (2022). The influence of high-temperature nitridation process on the crystalline quality of semipolar ( 11 2 ‾ 2 ) GaN epitaxial films. Current Applied Physics. 39. 38–44. 1 indexed citations

Li, Wenlong, Lianshan Wang, Zhen Wang, et al.. (2022). Anisotropic Strain Relaxation in Semipolar (112¯2) InGaN/GaN Superlattice Relaxed Templates. Nanomaterials. 12(17). 3007–3007. 5 indexed citations

Wang, Lianshan, et al.. (2021). Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes. CrystEngComm. 23(12). 2360–2366. 17 indexed citations

Yang, Shaoyan, Zhifeng Xu, & Cheng Chen. (2020). METHOD OF AIRBORNE SAR RADIATION CALIBRATION BASED ON POINT TARGET. SHILAP Revista de lepidopterología. XLIII-B1-2020. 123–128. 2 indexed citations

Wang, Lianshan, et al.. (2019). Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/GaN-based high electron mobility transistors. Semiconductor Science and Technology. 34(12). 125006–125006. 7 indexed citations

Zhao, Guijuan, Xiaoqing Xu, Huijie Li, et al.. (2016). The immiscibility of InAlN ternary alloy. Scientific Reports. 6(1). 26600–26600. 16 indexed citations

10.

Lin, Zhengzhong, et al.. (2015). Magnetic, spectroscopic and structural properties of a copper cyclic compound. Journal of Coordination Chemistry. 68(12). 2121–2129. 4 indexed citations

11.

Wei, Hongyuan, Shaoyan Yang, Zhe Chen, et al.. (2014). Competitive growth mechanisms of AlN on Si (111) by MOVPE. Scientific Reports. 4(1). 6416–6416. 51 indexed citations

12.

Wang, Lianshan, Shaoyan Yang, Huijie Li, et al.. (2014). Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures. Journal of Applied Physics. 115(4). 1 indexed citations

13.

Wei, Hongyuan, Shaoyan Yang, Huijie Li, et al.. (2014). Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor phase epitaxy. RSC Advances. 4(97). 54902–54906. 5 indexed citations

14.

Jia, Caihong, Yonghai Chen, Xianglin Liu, et al.. (2013). Control of epitaxial relationships of ZnO/SrTiO3 heterointerfaces by etching the substrate surface. Nanoscale Research Letters. 8(1). 23–23. 14 indexed citations

15.

Liu, Guipeng, Ju Wu, Guijuan Zhao, et al.. (2012). Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures. Applied Physics Letters. 100(8). 9 indexed citations

16.

Liu, Jianming, Xianlin Liu, Chengming Li, et al.. (2011). Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method. Nanoscale Research Letters. 6(1). 69–69. 12 indexed citations

17.

Liu, Guipeng, Ju Wu, Yanwu Lü, et al.. (2011). Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures. Journal of Applied Physics. 110(2). 5 indexed citations

18.

Chen, Nuofu, Zhikai Liu, Shaoyan Yang, et al.. (2003). The Micro-Magnetic Structures of Mn⁺Ion-Implanted GaSb. Japanese Journal of Applied Physics. 42(Part 1, No. 6A). 3389–3391. 2 indexed citations

19.

Song, Shulin, Nuofu Chen, Jianping Zhou, et al.. (2003). (Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit. Journal of Crystal Growth. 260(3-4). 451–455.

20.

Zhang, Zhicheng, Shaoyan Yang, Fuqiang Zhang, et al.. (2002). Strain relaxation of InP film directly grown on GaAs patterned compliant substrate. Journal of Crystal Growth. 243(1). 71–76. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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