F.M. Kießling

900 total citations
50 papers, 490 citations indexed

About

F.M. Kießling is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, F.M. Kießling has authored 50 papers receiving a total of 490 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 16 papers in Materials Chemistry. Recurrent topics in F.M. Kießling's work include Silicon and Solar Cell Technologies (19 papers), Advanced Semiconductor Detectors and Materials (12 papers) and Solidification and crystal growth phenomena (11 papers). F.M. Kießling is often cited by papers focused on Silicon and Solar Cell Technologies (19 papers), Advanced Semiconductor Detectors and Materials (12 papers) and Solidification and crystal growth phenomena (11 papers). F.M. Kießling collaborates with scholars based in Germany, France and Norway. F.M. Kießling's co-authors include P. Rudolph, Natasha Dropka, P. Gille, Uta Juda, Martin Burkert, Michael Müller, W. Ulrici, A. Polity, R. Krause and C. Corbel and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

F.M. Kießling

49 papers receiving 453 citations

Peers

F.M. Kießling

EEE

AMPO

Paul G. Huray United States

Khaled Hassouni France

M. P. Volz United States

А. И. Потекаев Russia

Katsuhiko Ishida Japan

Shariar Motakef United States

Adam L. Woodcraft United Kingdom

M. Asen-Palmer Germany

Choijil Baasandash Japan

С. П. Малышенко Russia

Paul G. Huray United States

F.M. Kießling

270 ×0.8

EEE

115 ×0.5

105 ×0.8

AMPO

67 ×0.7

46 ×0.6

Citations per year, relative to F.M. Kießling F.M. Kießling (= 1×) peers Paul G. Huray

Countries citing papers authored by F.M. Kießling

Since Specialization

Citations

This map shows the geographic impact of F.M. Kießling's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F.M. Kießling with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F.M. Kießling more than expected).

Fields of papers citing papers by F.M. Kießling

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F.M. Kießling. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F.M. Kießling. The network helps show where F.M. Kießling may publish in the future.

Co-authorship network of co-authors of F.M. Kießling

This figure shows the co-authorship network connecting the top 25 collaborators of F.M. Kießling. A scholar is included among the top collaborators of F.M. Kießling based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F.M. Kießling. F.M. Kießling is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Kießling, F.M., et al.. (2025). Heating efficiency and energy saving potential of Czochralski crystal growth furnaces. Journal of Crystal Growth. 662. 128106–128106. 1 indexed citations

Kießling, F.M., P. G. Murray, M. Kinley-Hanlon, et al.. (2022). Quasi-monocrystalline silicon for low-noise end mirrors in cryogenic gravitational-wave detectors. Physical Review Research. 4(4). 1 indexed citations

Dropka, Natasha, et al.. (2022). Adjustment of resistivity for phosphorus-doped n-type multicrystalline silicon. Solar Energy Materials and Solar Cells. 248. 111989–111989. 5 indexed citations

Kießling, F.M., et al.. (2020). Characterization of Mono-Crystalline and Multi-Crystalline Silicon by the Extended Lateral Photovoltage Scanning and Scanning Photoluminescence. ECS Journal of Solid State Science and Technology. 9(8). 86001–86001.

Dropka, Natasha, et al.. (2020). Influence of impurities from SiC and TiC crucible cover on directionally solidified silicon. Journal of Crystal Growth. 542. 125692–125692. 10 indexed citations

Dropka, Natasha, et al.. (2019). Semiconductor Crystal Growth under the Influence of Magnetic Fields. Crystal Research and Technology. 55(2). 19 indexed citations

Wagner, Matthias, et al.. (2018). Defect-induced Stress Imaging in Single and Multi-crystalline Semiconductor Materials. Materials Today Proceedings. 5(6). 14748–14756. 1 indexed citations

Kießling, F.M., et al.. (2016). Different nucleation approaches for production of high-performance multi-crystalline silicon ingots and solar cells. Solar Energy Materials and Solar Cells. 159. 128–135. 27 indexed citations

Dropka, Natasha, et al.. (2014). Characterization of a 75 kg multicrystalline Si ingot grown in a KRISTMAG ® -type G2-sized directional solidification furnace. Solar Energy Materials and Solar Cells. 130. 652–660. 7 indexed citations

10.

Kießling, F.M., et al.. (2012). Characterization of mc-Si directionally solidified in travelling magnetic fields. Journal of Crystal Growth. 360. 81–86. 33 indexed citations

11.

Hempel, Martin, Jens W. Tomm, Fabio La Mattina, et al.. (2012). Microscopic Origins of Catastrophic Optical Damage in Diode Lasers. IEEE Journal of Selected Topics in Quantum Electronics. 19(4). 1500508–1500508. 25 indexed citations

12.

Kießling, F.M., M. Albrecht, K. Irmscher, et al.. (2009). Boron‐ and stoichiometry‐related defect engineering during B₂O₃‐free GaAs crystal growth. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(12). 2778–2784. 2 indexed citations

13.

Kießling, F.M., M. Albrecht, K. Irmscher, et al.. (2007). Defect distribution in boron-reduced GaAs crystals grown by vapour-pressure-controlled Czochralski technique. Journal of Crystal Growth. 310(7-9). 1418–1423. 5 indexed citations

14.

Kießling, F.M., P. Rudolph, M. Neubert, et al.. (2004). Growth of GaAs crystals from Ga-rich melts by the VCz method without liquid encapsulation. Journal of Crystal Growth. 269(2-4). 218–228. 13 indexed citations

15.

Kießling, F.M., Michael Neubert, P. Rudolph, & W. Ulrici. (2003). Non-stoichiometric growth of GaAs by the vapour pressure controlled Czochralski (VCz) method without B2O3 encapsulation. Materials Science in Semiconductor Processing. 6(5-6). 303–306. 3 indexed citations

16.

Kießling, F.M. & Hartmut S. Leipner. (1993). TEM investigation of precipitates in Hg0.8Cd0.2Te grown by the travelling heater method. Journal of Crystal Growth. 128(1-4). 599–603. 3 indexed citations

17.

Neubert, M., F.M. Kießling, Bogdan Barz, & Karin Jacobs. (1993). Kinetics of Te precipitation in mercury cadmium telluride. Semiconductor Science and Technology. 8(12). 2151–2160. 3 indexed citations

18.

Corbel, C., et al.. (1993). Positron trapping at native vacancies in CdTe crystals: In doping effect. Materials Science and Engineering B. 16(1-3). 134–138. 14 indexed citations

19.

Kießling, F.M. & P. Gille. (1990). Temperature Measurement in a THM Solution Zone for the Growth of Hg_1−xCd_xTe. Crystal Research and Technology. 25(11). 1359–1364. 3 indexed citations

20.

Genzel, Ch., et al.. (1990). Structural perfection of Hg1−xCdxTe Grown by THM. Journal of Crystal Growth. 101(1-4). 232–236. 17 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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