Jiro Ida

491 total citations
69 papers, 242 citations indexed

About

Jiro Ida is a scholar working on Electrical and Electronic Engineering, Aerospace Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Jiro Ida has authored 69 papers receiving a total of 242 indexed citations (citations by other indexed papers that have themselves been cited), including 69 papers in Electrical and Electronic Engineering, 8 papers in Aerospace Engineering and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Jiro Ida's work include Advancements in Semiconductor Devices and Circuit Design (43 papers), Semiconductor materials and devices (41 papers) and Integrated Circuits and Semiconductor Failure Analysis (20 papers). Jiro Ida is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (43 papers), Semiconductor materials and devices (41 papers) and Integrated Circuits and Semiconductor Failure Analysis (20 papers). Jiro Ida collaborates with scholars based in Japan, Belgium and France. Jiro Ida's co-authors include Takayuki Mori, Kenji Itoh, Keisuke Noguchi, Y. Arai, Masao Okihara, Koichiro Ishibashi, Takahiro Furuta, Shunsuke Baba, Akira Uchiyama and M. Ino and has published in prestigious journals such as Japanese Journal of Applied Physics, Solid-State Electronics and IEEE Journal of the Electron Devices Society.

In The Last Decade

Jiro Ida

59 papers receiving 232 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jiro Ida Japan 9 237 33 28 12 9 69 242
C. Leyris France 9 207 0.9× 15 0.5× 31 1.1× 12 1.0× 15 217
Woorim Shin United States 11 389 1.6× 91 2.8× 19 0.7× 18 1.5× 6 0.7× 16 398
Youngchang Yoon United States 10 410 1.7× 26 0.8× 27 1.0× 10 0.8× 5 0.6× 22 418
Kaushik Dasgupta United States 12 361 1.5× 52 1.6× 34 1.2× 13 1.1× 2 0.2× 20 374
Jinseok Park South Korea 9 267 1.1× 36 1.1× 19 0.7× 13 1.1× 3 0.3× 16 277
T. Toyama Japan 5 66 0.3× 59 1.8× 26 0.9× 20 1.7× 2 0.2× 44 91
M. Courthold United Kingdom 5 45 0.2× 25 0.8× 47 1.7× 10 0.8× 2 0.2× 8 68
Ryoichi Tachibana Japan 8 267 1.1× 20 0.6× 17 0.6× 5 0.4× 6 0.7× 11 286
Donghyup Shin United States 7 288 1.2× 93 2.8× 25 0.9× 7 0.6× 7 0.8× 17 317
Yi-Cheng Wu United States 11 295 1.2× 15 0.5× 43 1.5× 17 1.4× 11 1.2× 30 307

Countries citing papers authored by Jiro Ida

Since Specialization
Citations

This map shows the geographic impact of Jiro Ida's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jiro Ida with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jiro Ida more than expected).

Fields of papers citing papers by Jiro Ida

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jiro Ida. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jiro Ida. The network helps show where Jiro Ida may publish in the future.

Co-authorship network of co-authors of Jiro Ida

This figure shows the co-authorship network connecting the top 25 collaborators of Jiro Ida. A scholar is included among the top collaborators of Jiro Ida based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jiro Ida. Jiro Ida is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mori, Takayuki, et al.. (2025). Steep Subthreshold Slope Gate-Controlled Carrier-Injection SOI Transistor for Ultralow Power Applications. IEEE Journal of the Electron Devices Society. 13. 892–898.
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Mori, Takayuki, et al.. (2023). Steep subthreshold slope “Dual-gate PN-body tied SOI-FET” – First fabrication results –. Solid-State Electronics. 207. 108720–108720. 3 indexed citations
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Mori, Takayuki & Jiro Ida. (2021). Investigation of capacitor-less integrate and fire neuron by using dual-gate a PN-body tied silicon on insulator field-effect transistor. Japanese Journal of Applied Physics. 60(SB). SBBA04–SBBA04. 2 indexed citations
6.
Ishibashi, Koichiro, et al.. (2019). RF Characteristics of Rectifier Devices for Ambient RF Energy Harvesting. 1–4. 5 indexed citations
7.
Itoh, Kenji, et al.. (2019). High Sensitive 2.4 GHz Band Rectenna with Direct Matching Topology. 278–281. 2 indexed citations
8.
Noguchi, Keisuke, et al.. (2018). A Folded Dipole Antenna with Three conductors for Energy Harvesting Applications. IEICE Technical Report; IEICE Tech. Rep.. 118(37). 1–6.
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Ida, Jiro, et al.. (2015). Super steep subthreshold slope PN-body tied SOI FET with ultra low drain voltage down to 0.1V. 22.7.1–22.7.4. 24 indexed citations
12.
Noguchi, Keisuke, et al.. (2015). Design of high-impedance wideband folded dipole antennas for energy harvesting applications. 257–258. 1 indexed citations
13.
Noguchi, Keisuke, et al.. (2014). Design of a High-Impedance Wideband Folded Dipole Antenna and Reception Power Level for Energy Harvesting Applications. IEICE Technical Report; IEICE Tech. Rep.. 114(245). 13–18. 1 indexed citations
14.
Mori, Takayuki & Jiro Ida. (2013). Possibility of SOI based super steep subthreshold slope MOSFET for ultra low voltage application. 8. 1–2. 2 indexed citations
15.
Shindou, H., et al.. (2008). Improvement of the tolerance to total ionizing dose in SOI CMOS. 50. 135–136. 3 indexed citations
16.
Uchiyama, Akira, et al.. (2006). Fully Depleted SOI Technology for Ultra Low Power Digital and RF Applications. 15–16. 9 indexed citations
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Ida, Jiro, et al.. (1998). Characterization of Dopant Interdiffusion and Power Reduction on TiSi2 Local Wiring Technology in Sub-Half-Micron Complementary Metal Oxide Semiconductor. Japanese Journal of Applied Physics. 37(4R). 1674–1674. 1 indexed citations
20.
Ida, Jiro, et al.. (1994). Dopant Redistribution Effect on Post-Junction Silicide Scheme Shallow Junction and a Proposal of Novel Self-Aligned Silicide Scheme. Japanese Journal of Applied Physics. 33(1S). 475–475. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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