René Hammer
Impact in
- Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials
- Materials Chemistry top 10%
- Quasicrystal Structures and Properties
- X-ray Diffraction in Crystallography
- Graphene research and applications
- Thermal properties of materials
Papers in
-
- Silicon Carbide Semiconductor Technologies 7
- Integrated Circuits and Semiconductor Failure Analysis 6
-
- Ultrasonics and Acoustic Wave Propagation 7
- Co-authors
- W. Widdra (9 shared papers)Stefan Förster (7 shared papers)K. Meinel (5 shared papers)W. Pötz (5 shared papers)Martin Trautmann (2 shared papers)Anton Arnold (2 shared papers)Hans-Peter Gänser (7 shared papers)Thomas Antretter (4 shared papers)
- Journals
- Microelectronics Reliability (5 papers)Materials & Design (4 papers)Journal of Applied Physics (3 papers)Journal of Computational Physics (2 papers)Energies (2 papers)
- Partner nations
- AustriaGermanyUnited States
In The Last Decade
René Hammer
53 papers receiving 820 citations
Peers
Comparison fields: 5 of 67
- Condensed Matter Physics 112
- Materials Chemistry 428
- Geochemistry and Petrology 46
- Archeology 6
- Atomic and Molecular Physics, and Optics 177
Countries citing papers authored by René Hammer
This map shows the geographic impact of René Hammer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by René Hammer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites René Hammer more than expected).
Fields of papers citing papers by René Hammer
This network shows the impact of papers produced by René Hammer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by René Hammer. The network helps show where René Hammer may publish in the future.
Co-authors
The 25 scholars most cited alongside René Hammer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
Showing the 20 most-cited of 53 papers — load more, or switch the sort, to bring in the rest.
| # | Work | ||
|---|---|---|---|
| 1 | 2013 | 144 | |
| 2 | 2020 | 63 | |
| 3 | 2014 | 53 | |
| 4 | 2019 | 42 | |
| 5 | 2013 | 40 | |
| 6 | 2016 | 39 | |
| 7 | 2020 | 34 | |
| 8 | 2014 | 27 | |
| 9 | 2013 | 24 | |
| 10 | 2017 | 22 | |
| 11 | 2016 | 20 | |
| 12 | 2018 | 19 | |
| 13 | 2016 | 18 | |
| 14 | 2020 | 17 | |
| 15 | 1977 | 16 | |
| 16 | 2013 | 16 | |
| 17 | 2016 | 16 | |
| 18 | 2019 | 14 | |
| 19 | 2016 | 14 | |
| 20 | 2021 | 13 |
About René Hammer
René Hammer is a scholar working on Electrical and Electronic Engineering, Mechanics of Materials, Materials Chemistry, Mechanical Engineering and Biomedical Engineering, having authored 53 papers that have together received 829 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (7 papers), GaN-based semiconductor devices and materials (7 papers), Ultrasonics and Acoustic Wave Propagation (7 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers), Microstructure and mechanical properties (5 papers), Advanced Surface Polishing Techniques (5 papers), Topological Materials and Phenomena (5 papers) and Metal Forming Simulation Techniques (5 papers). The work is most often cited by research in Condensed Matter Physics (112 citations), Materials Chemistry (428 citations), Geochemistry and Petrology (46 citations), Archeology (6 citations) and Atomic and Molecular Physics, and Optics (177 citations). René Hammer has collaborated with scholars based in Austria, Germany and United States. Frequent co-authors include W. Widdra, Stefan Förster, K. Meinel, W. Pötz, Martin Trautmann, Anton Arnold, Hans-Peter Gänser, Thomas Antretter, Wolfgang Sanz and Sina Lohrasbi. Their work appears in journals such as Microelectronics Reliability, Materials & Design, Journal of Applied Physics, Journal of Computational Physics and Energies.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.