I. V. Grekhov

1.5k total citations
142 papers, 1.2k citations indexed

About

I. V. Grekhov is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Control and Systems Engineering. According to data from OpenAlex, I. V. Grekhov has authored 142 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 123 papers in Electrical and Electronic Engineering, 57 papers in Atomic and Molecular Physics, and Optics and 38 papers in Control and Systems Engineering. Recurrent topics in I. V. Grekhov's work include Silicon Carbide Semiconductor Technologies (41 papers), Semiconductor materials and devices (41 papers) and Pulsed Power Technology Applications (37 papers). I. V. Grekhov is often cited by papers focused on Silicon Carbide Semiconductor Technologies (41 papers), Semiconductor materials and devices (41 papers) and Pulsed Power Technology Applications (37 papers). I. V. Grekhov collaborates with scholars based in Russia, South Korea and Germany. I. V. Grekhov's co-authors include Pavel Rodin, S. V. Korotkov, G. A. Mesyats, P. A. Ivanov, M. I. Vexler, А. С. Потапов, Ute Ebert, A.F. Kardo-Sysoev, Willem Hundsdorfer and O. I. Kon’kov and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

I. V. Grekhov

135 papers receiving 1.1k citations

Peers

I. V. Grekhov

EEE

CSE

AMPO

D. Shiffler United States

F.J. Zutavern United States

E. A. Litvinov Russia

J.O. Rossi Brazil

C. S. Kou Taiwan

K. Golby United States

M.D. Haworth United States

Diana Gamzina United States

S. Banna United States

Liansheng Xia China

D. Shiffler United States

I. V. Grekhov

928 ×1.0

EEE

489 ×0.9

CSE

960 ×2.2

AMPO

447 ×1.8

132 ×1.5

Citations per year, relative to I. V. Grekhov I. V. Grekhov (= 1×) peers D. Shiffler

Countries citing papers authored by I. V. Grekhov

Since Specialization

Citations

This map shows the geographic impact of I. V. Grekhov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. V. Grekhov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. V. Grekhov more than expected).

Fields of papers citing papers by I. V. Grekhov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. V. Grekhov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. V. Grekhov. The network helps show where I. V. Grekhov may publish in the future.

Co-authorship network of co-authors of I. V. Grekhov

This figure shows the co-authorship network connecting the top 25 collaborators of I. V. Grekhov. A scholar is included among the top collaborators of I. V. Grekhov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. V. Grekhov. I. V. Grekhov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Grekhov, I. V., et al.. (2019). Investigation of the Turn-off Process of an Integrated Thyristor with an Embedded Control System. Instruments and Experimental Techniques. 62(4). 493–497.

Rozhkov, A. V., et al.. (2016). Picosecond-Range Avalanche Switching of High-Voltage Diodes: Si Versus GaAs Structures. IEEE Transactions on Plasma Science. 44(10). 1941–1946. 17 indexed citations

Иванов, М. С., Pavel Rodin, P. A. Ivanov, & I. V. Grekhov. (2016). Parameters of silicon carbide diode avalanche shapers for the picosecond range. Technical Physics Letters. 42(1). 43–46. 5 indexed citations

Grekhov, I. V., et al.. (2015). A high-voltage pulse integrated thyristor. Instruments and Experimental Techniques. 58(1). 67–69. 6 indexed citations

Argunova, T. S., et al.. (2013). Si_{1-x}Ge_{x} Single Crystals Grown by the Czochralski Method: Defects and Electrical Properties. Acta Physica Polonica A. 124(2). 239–243. 1 indexed citations

Grekhov, I. V., et al.. (2012). Effects of current localization in high-power microgate bipolar switches with nonideal interconnection between controlled cells. Technical Physics. 57(5). 636–643. 2 indexed citations

Grekhov, I. V., et al.. (2010). Ultrafast turn-off of high currents by field-controlled integrated thyristor. Technical Physics Letters. 36(10). 926–928. 1 indexed citations

Grekhov, I. V., et al.. (2010). Cascode turn-off of field-controlled integrated thyristors. Technical Physics. 55(1). 154–157. 4 indexed citations

Пронин, И. П., et al.. (2005). A ferroelectric field effect transistor based on a Pb(ZrxTi1−x )O3/SnO2 heterostructure. Semiconductors. 39(7). 856–860. 5 indexed citations

10.

Ivanov, Pavel A., et al.. (2003). Reverse Current Recovery in 4H-SiC Diodes with n- and p-Base. Materials science forum. 433-436. 855–858.

11.

Vexler, M. I., et al.. (2002). Electron tunneling through a double barrier in a reverse-biased metal-oxide-silicon structure. Semiconductors. 36(8). 889–894. 4 indexed citations

12.

Veselovskii, Igor, et al.. (2001). Strongly modulated conductivity in a perovskite ferroelectric field-effect transistor. Technical Physics Letters. 27(1). 17–19. 7 indexed citations

13.

Argunova, T. S., et al.. (1999). Reduction of elastic strains in directly-bonded silicon structures. Physics of the Solid State. 41(11). 1790–1798. 9 indexed citations

14.

Grekhov, I. V., et al.. (1997). A new buffer layer for high-quality HTSC ultrathin film fabrication. Physica C Superconductivity. 276(1-2). 18–24. 13 indexed citations

15.

Grekhov, I. V., et al.. (1996). Recombination properties of directly bonded silicon structures with a regular relief at the interface. Technical Physics Letters. 22(12). 956–957. 1 indexed citations

16.

Grekhov, I. V., et al.. (1996). Electrical properties of Au/CaF 2 /n-Si structures grown by molecular-beam epitaxy with ultrathin (less than 20 nm) CaF 2 layers. Semiconductors. 30(7). 698–701. 7 indexed citations

17.

Grekhov, I. V., et al.. (1994). Superconductor - insulator transition in YBa2Cu3−xNbxO7 material. Physica C Superconductivity. 235-240. 1295–1296. 6 indexed citations

18.

Grekhov, I. V., et al.. (1993). Multistability of metal-insulator-semiconductor structures with a tunnel-thin insulator layer. 19(2). 89–91. 2 indexed citations

19.

Grekhov, I. V.. (1989). New principles of high power switching with semiconductor devices. Solid-State Electronics. 32(11). 923–930. 60 indexed citations

20.

Grekhov, I. V., et al.. (1979). Breakdown delay and excitation of ionization waves in p-n junctions. Technical Physics Letters. 5. 399. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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