R. E. Viturro

865 total citations
42 papers, 713 citations indexed

About

R. E. Viturro is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Surfaces, Coatings and Films. According to data from OpenAlex, R. E. Viturro has authored 42 papers receiving a total of 713 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Atomic and Molecular Physics, and Optics, 25 papers in Electrical and Electronic Engineering and 12 papers in Surfaces, Coatings and Films. Recurrent topics in R. E. Viturro's work include Semiconductor materials and interfaces (23 papers), Semiconductor Quantum Structures and Devices (15 papers) and Surface and Thin Film Phenomena (15 papers). R. E. Viturro is often cited by papers focused on Semiconductor materials and interfaces (23 papers), Semiconductor Quantum Structures and Devices (15 papers) and Surface and Thin Film Phenomena (15 papers). R. E. Viturro collaborates with scholars based in United States, Italy and France. R. E. Viturro's co-authors include L. J. Brillson, L. J. Brillson, P. D. Kirchner, J. L. Shaw, G. D. Pettit, G. Margaritondo, J. M. Woodall, M. L. Slade, J. M. Woodall and K. Weiser and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

R. E. Viturro

40 papers receiving 688 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
R. E. Viturro United States	18	527	460	209	165	88	42	713
R. Cao United States	14	621 1.2×	549 1.2×	169 0.8×	166 1.0×	89 1.0×	37	812
M. Alonso Spain	12	411 0.8×	367 0.8×	197 0.9×	192 1.2×	71 0.8×	40	636
P. H. Mahowald United States	12	489 0.9×	558 1.2×	208 1.0×	166 1.0×	78 0.9×	26	737
Hirohiko Sugahara Japan	12	445 0.8×	509 1.1×	133 0.6×	140 0.8×	71 0.8×	27	646
Toshihiro Ichikawa Japan	13	475 0.9×	226 0.5×	181 0.9×	150 0.9×	80 0.9×	25	601
C. E. McCants United States	12	471 0.9×	480 1.0×	132 0.6×	115 0.7×	64 0.7×	21	623
Jia-Fa Fan Japan	8	536 1.0×	607 1.3×	118 0.6×	215 1.3×	93 1.1×	13	752
M. del Giudice United States	15	465 0.9×	267 0.6×	257 1.2×	182 1.1×	90 1.0×	28	660
Keung L. Luke United States	12	302 0.6×	416 0.9×	102 0.5×	119 0.7×	64 0.7×	27	527
Naoaki Aizaki Japan	14	316 0.6×	584 1.3×	93 0.4×	259 1.6×	136 1.5×	37	709

Countries citing papers authored by R. E. Viturro

Since Specialization

Citations

This map shows the geographic impact of R. E. Viturro's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. E. Viturro with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. E. Viturro more than expected).

Fields of papers citing papers by R. E. Viturro

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. E. Viturro. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. E. Viturro. The network helps show where R. E. Viturro may publish in the future.

Co-authorship network of co-authors of R. E. Viturro

This figure shows the co-authorship network connecting the top 25 collaborators of R. E. Viturro. A scholar is included among the top collaborators of R. E. Viturro based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. E. Viturro. R. E. Viturro is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Mestha, Lalit K., et al.. (2005). Gray Balance Control Loop for Digital Color Printing Systems. Technical programs and proceedings. 21(1). 499–504.

Quintanilla, M. A. S., José Manuel Valverde, A. Castellanos, & R. E. Viturro. (2001). Looking for Self-Organized Critical Behavior in Avalanches of Slightly Cohesive Powders. Physical Review Letters. 87(19). 194301–194301. 25 indexed citations

Brillson, L. J., I. M. Vitomirov, A. Raisanen, et al.. (1993). Electronic structure of metal/semiconductor interfaces from cathodoluminescence and soft X-ray photoemission spectroscopies. Applied Surface Science. 65-66. 667–675. 7 indexed citations

Vitomirov, I. M., A. Raisanen, Adam C. Finnefrock, et al.. (1992). Geometric ordering, surface chemistry, band bending, and work function at decapped GaAs(100) surfaces. Physical review. B, Condensed matter. 46(20). 13293–13302. 60 indexed citations

Vitomirov, I. M., A. Raisanen, Adam C. Finnefrock, et al.. (1992). Surface and interface states for GaAs(100) (1×1) and (4×2)-c(8×2) reconstructions. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 10(4). 749–753. 9 indexed citations

Johnson, F.G., et al.. (1992). Use of Valved, Solid Group V Sources for the Growth of GaAs/GaInP Heterostructures by Molecular Beam Epitaxy. MRS Proceedings. 281. 1 indexed citations

Houde-Walter, S. N., et al.. (1991). Dependence of Interdiffusion in AlGaAs on Stoichiometry between Ga-RICH and As-Rich Solidus Limits. MRS Proceedings. 240.

Viturro, R. E., et al.. (1991). Low-energy cathodoluminescence spectroscopy studies of III–V superlattice interdiffusion: Optical emission properties of diffusion associated defects. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 9(4). 2244–2250. 3 indexed citations

Brillson, L. J., et al.. (1990). Interface states at metal-compound semiconductor junctions. Vacuum. 41(4-6). 1016–1020. 5 indexed citations

10.

Chang, Shih-Hang, J. L. Shaw, R. E. Viturro, et al.. (1990). Temperature-dependent formation of interface states and Schottky barriers at metal/molecular-beam epitaxy GaAs(100) junctions. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 8(5). 3803–3808. 6 indexed citations

11.

Chiaradia, P., et al.. (1989). Schottky-like behavior of the GaP(110)/Ag interface. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 7(2). 195–198. 9 indexed citations

12.

Shaw, J. L., R. E. Viturro, L. J. Brillson, & D. LaGraffe. (1989). Influence of deep states on CdTe and GaAs metal interface formation. Journal of Electronic Materials. 18(1). 59–64. 2 indexed citations

13.

Chiaradia, P., M. Fanfoni, Paola De Padova, et al.. (1989). Fermi-level pinning and intrinsic surface states in cleaved GaP. Physical review. B, Condensed matter. 39(8). 5128–5131. 21 indexed citations

14.

Brillson, L. J., et al.. (1988). Cathodoluminescence spectroscopy of metal–semiconductor interface structures. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(3). 1437–1445. 24 indexed citations

15.

Shaw, J. L., R. E. Viturro, L. J. Brillson, & D. LaGraffe. (1988). Chemically controlled deep level formation and band bending at metal-CdTe interfaces. Applied Physics Letters. 53(18). 1723–1725. 14 indexed citations

16.

Shaw, J. L., R. E. Viturro, L. J. Brillson, D. Kilday, & G. Margaritondo. (1988). Modification of electronic and chemical structure at metal/cdte interfaces by pulsed laser annealing. Journal of Electronic Materials. 17(2). 149–153. 8 indexed citations

17.

Shaw, J. L., R. E. Viturro, L. J. Brillson, et al.. (1988). Deep level formation and band bending at metal/CdTe interfaces. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(3). 1579–1583. 5 indexed citations

18.

Shaw, J. L., R. E. Viturro, L. J. Brillson, et al.. (1988). Interfacial deep‐level formation and its effect on band bending at metal/CdTe interfaces. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(4). 2752–2756. 11 indexed citations

19.

Viturro, R. E. & K. Weiser. (1986). Some properties of hydrogenated amorphous silicon produced by direct reaction of silicon and hydrogen atoms. Philosophical Magazine B. 53(2). 93–103. 36 indexed citations

20.

Brillson, L. J., M. L. Slade, R. E. Viturro, et al.. (1986). Absence of Fermi level pinning at metal-InxGa1−xAs(100) interfaces. Applied Physics Letters. 48(21). 1458–1460. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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