C. E. McCants

759 total citations
21 papers, 623 citations indexed

About

C. E. McCants is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Surfaces, Coatings and Films. According to data from OpenAlex, C. E. McCants has authored 21 papers receiving a total of 623 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Atomic and Molecular Physics, and Optics, 13 papers in Electrical and Electronic Engineering and 6 papers in Surfaces, Coatings and Films. Recurrent topics in C. E. McCants's work include Semiconductor materials and interfaces (11 papers), Surface and Thin Film Phenomena (8 papers) and Semiconductor materials and devices (8 papers). C. E. McCants is often cited by papers focused on Semiconductor materials and interfaces (11 papers), Surface and Thin Film Phenomena (8 papers) and Semiconductor materials and devices (8 papers). C. E. McCants collaborates with scholars based in United States. C. E. McCants's co-authors include W. E. Spicer, T. Kendelewicz, I. Lindau, N. Newman, P. H. Mahowald, R. Cao, K. E. Miyano, Z. Liliental‐Weber, E. R. Weber and M. D. Williams and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Proceedings of the IEEE.

In The Last Decade

C. E. McCants

20 papers receiving 592 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. E. McCants United States 12 480 471 132 115 64 21 623
P. H. Mahowald United States 12 558 1.2× 489 1.0× 208 1.6× 166 1.4× 78 1.2× 26 737
Jia-Fa Fan Japan 8 607 1.3× 536 1.1× 118 0.9× 215 1.9× 93 1.5× 13 752
W.R. MacEwan United Kingdom 17 396 0.8× 519 1.1× 68 0.5× 169 1.5× 46 0.7× 46 658
L. C. Hopkins United States 12 335 0.7× 304 0.6× 66 0.5× 100 0.9× 163 2.5× 28 506
W. Reichert United States 15 427 0.9× 268 0.6× 50 0.4× 107 0.9× 58 0.9× 49 594
H. J. Stocker United States 16 481 1.0× 409 0.9× 46 0.3× 239 2.1× 52 0.8× 24 661
Hirohiko Sugahara Japan 12 509 1.1× 445 0.9× 133 1.0× 140 1.2× 71 1.1× 27 646
Satoshi Maeyama Japan 12 315 0.7× 282 0.6× 164 1.2× 136 1.2× 46 0.7× 52 501
Keung L. Luke United States 12 416 0.9× 302 0.6× 102 0.8× 119 1.0× 64 1.0× 27 527
M. Iwatsuki Japan 16 207 0.4× 494 1.0× 72 0.5× 207 1.8× 171 2.7× 36 679

Countries citing papers authored by C. E. McCants

Since Specialization
Citations

This map shows the geographic impact of C. E. McCants's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. E. McCants with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. E. McCants more than expected).

Fields of papers citing papers by C. E. McCants

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. E. McCants. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. E. McCants. The network helps show where C. E. McCants may publish in the future.

Co-authorship network of co-authors of C. E. McCants

This figure shows the co-authorship network connecting the top 25 collaborators of C. E. McCants. A scholar is included among the top collaborators of C. E. McCants based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. E. McCants. C. E. McCants is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Leheny, R. F. & C. E. McCants. (2009). Technologies for Photonic Sensor Systems. Proceedings of the IEEE. 97(6). 957–970. 4 indexed citations
2.
Trefonas, Peter, et al.. (1989). A Lithographic Study of Photoresists Containing a Base Soluble Dye. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1086. 515–515. 1 indexed citations
3.
Friedman, D. J., et al.. (1989). Fermi-level movement at metal/HgCdTe contacts formed at low temperature. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 7(2). 483–488. 1 indexed citations
4.
Bertness, K. A., P. H. Mahowald, C. E. McCants, et al.. (1988). Photoenhancement mechanism for oxygen chemisorption on GaAs(110) using visible light. Applied Physics A. 47(3). 219–228. 19 indexed citations
5.
List, R. S., T. Kendelewicz, M. D. Williams, et al.. (1988). Chemical reactions at the Si/GaAs(110) and Si/InP(110) interfaces: Effects on valence-band discontinuity measurements. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(3). 1543–1547. 6 indexed citations
6.
Spicer, W. E., T. Kendelewicz, N. Newman, et al.. (1988). The advanced unified defect model and its applications. Applied Surface Science. 33-34. 1009–1029. 48 indexed citations
7.
McCants, C. E., T. Kendelewicz, P. H. Mahowald, et al.. (1988). Chemical and electrical properties at the annealed Ti/GaAs(110) interface. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(3). 1466–1472. 11 indexed citations
8.
Spicer, W. E., Z. Liliental‐Weber, E. R. Weber, et al.. (1988). The advanced unified defect model for Schottky barrier formation. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 6(4). 1245–1251. 340 indexed citations
9.
McCants, C. E., Tom Kendelewicz, K. A. Bertness, et al.. (1987). Chemical and electronic properties of the Pt/GaAs(110) interface. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 5(4). 1068–1074. 13 indexed citations
10.
Kendelewicz, T., et al.. (1987). Surface shifts in the In 4dand P 2pcore-level spectra of InP(110). Physical review. B, Condensed matter. 36(12). 6543–6546. 36 indexed citations
11.
Mahowald, P. H., Tom Kendelewicz, K. A. Bertness, et al.. (1987). Valence-band discontinuity at the Ge/InP(110) interface. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 5(4). 1258–1262. 4 indexed citations
12.
Kendelewicz, Tom, et al.. (1987). Chemical reaction and Schottky barrier formation at the Ti/InP(110) and Sn/InP(110) interfaces: Reactive versus nonreactive cases. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 5(4). 1033–1038. 5 indexed citations
13.
Bertness, K. A., C. E. McCants, P. H. Mahowald, et al.. (1987). Comparative uptake kinetics of N2O and O2 chemisorption on GaAs(110). Surface Science. 185(3). 544–558. 18 indexed citations
14.
Chin, Ken K., T. Kendelewicz, C. E. McCants, et al.. (1986). Kinetic study of Schottky barrier formation of In on GaAs(110) surface. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 4(3). 969–972. 18 indexed citations
15.
Kendelewicz, T., M. D. Williams, Ken K. Chin, et al.. (1986). Temperature-dependent pinning at the Al/n-GaAs(110) interface. Applied Physics Letters. 48(14). 919–921. 13 indexed citations
16.
Williams, M. D., et al.. (1986). Al on GaAs(110) revisited: Kinetic considerations. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 4(4). 939–942. 7 indexed citations
17.
Chin, Ken K., R. Cao, K. E. Miyano, et al.. (1985). An Investigation Of The Cause Of Initial Band Bending Of A Cleaved Clean n-GaAs(llO) Surface. MRS Proceedings. 54. 5 indexed citations
18.
Newman, N., Ken K. Chin, W Petro, et al.. (1985). Annealing of intimate Ag, Al, and Au–GaAs Schottky barriers. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 3(3). 996–1001. 29 indexed citations
19.
Williams, M. D., T. Kendelewicz, R. S. List, et al.. (1985). Cr on GaAs (110): The effect of electronegativity on the Schottky barrier height. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 3(4). 1202–1205. 13 indexed citations
20.
Spicer, W. E., N. Newman, W Petro, et al.. (1985). Experimental results examining various models of Schottky barrier formation on GaAs. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 3(4). 1178–1183. 32 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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