J. Da̧browski

3.7k total citations
122 papers, 3.0k citations indexed

About

J. Da̧browski is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J. Da̧browski has authored 122 papers receiving a total of 3.0k indexed citations (citations by other indexed papers that have themselves been cited), including 91 papers in Electrical and Electronic Engineering, 61 papers in Materials Chemistry and 41 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J. Da̧browski's work include Semiconductor materials and devices (74 papers), Graphene research and applications (25 papers) and Semiconductor materials and interfaces (24 papers). J. Da̧browski is often cited by papers focused on Semiconductor materials and devices (74 papers), Graphene research and applications (25 papers) and Semiconductor materials and interfaces (24 papers). J. Da̧browski collaborates with scholars based in Germany, Sweden and Poland. J. Da̧browski's co-authors include Matthias Scheffler, H.‐J. Müssig, Grzegorz Łupina, G. Lippert, Thomas Schroeder, G. A. Wolff, Christian Wenger, P. Zaumseil, Wolfgang Mehr and Max C. Lemme and has published in prestigious journals such as Physical Review Letters, Nano Letters and Physical review. B, Condensed matter.

In The Last Decade

J. Da̧browski

117 papers receiving 2.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Da̧browski Germany 29 1.9k 1.7k 1.2k 336 302 122 3.0k
Hiroyuki Kageshima Japan 31 2.4k 1.2× 2.8k 1.6× 1.3k 1.1× 238 0.7× 610 2.0× 199 4.0k
J. Falta Germany 25 917 0.5× 1.2k 0.7× 1.1k 0.9× 238 0.7× 272 0.9× 185 2.3k
Martin M. Frank United States 39 2.8k 1.4× 2.3k 1.4× 944 0.8× 366 1.1× 475 1.6× 97 4.0k
Cary Y. Yang United States 28 1.4k 0.7× 1.4k 0.8× 614 0.5× 351 1.0× 427 1.4× 147 2.7k
J. R. Engstrom United States 30 1.6k 0.8× 1.3k 0.8× 752 0.6× 201 0.6× 340 1.1× 96 2.5k
Tetsuji Yasuda Japan 36 3.5k 1.8× 1.6k 0.9× 1.6k 1.3× 237 0.7× 542 1.8× 240 4.2k
Atsushi Koma Japan 29 1.8k 1.0× 2.7k 1.6× 1.2k 1.0× 441 1.3× 445 1.5× 117 3.6k
Ravi Droopad United States 31 2.8k 1.5× 2.1k 1.3× 1.1k 0.9× 825 2.5× 374 1.2× 197 3.8k
Andrew J. Mayne France 30 1.7k 0.9× 2.0k 1.2× 1.7k 1.4× 195 0.6× 505 1.7× 115 3.2k
V. Yu. Aristov Russia 28 1.6k 0.8× 1.1k 0.6× 1.0k 0.8× 292 0.9× 375 1.2× 110 2.5k

Countries citing papers authored by J. Da̧browski

Since Specialization
Citations

This map shows the geographic impact of J. Da̧browski's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Da̧browski with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Da̧browski more than expected).

Fields of papers citing papers by J. Da̧browski

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Da̧browski. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Da̧browski. The network helps show where J. Da̧browski may publish in the future.

Co-authorship network of co-authors of J. Da̧browski

This figure shows the co-authorship network connecting the top 25 collaborators of J. Da̧browski. A scholar is included among the top collaborators of J. Da̧browski based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Da̧browski. J. Da̧browski is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Da̧browski, J., Markus Andreas Schubert, Mohamed Achehboune, et al.. (2024). Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si. Advanced Materials Interfaces. 12(1).
2.
Achehboune, Mohamed, J. Da̧browski, D. Vignaud, et al.. (2024). Atomistic insights into the nucleation and growth of hexagonal boron nitride and graphene heterostructures. Physical Chemistry Chemical Physics. 26(44). 28198–28207.
3.
Da̧browski, J., et al.. (2023). Chemical Vapor Deposition Growth of Graphene on 200 mm Ge(110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge(110) and Ge(001). ACS Applied Materials & Interfaces. 15(30). 36966–36974. 8 indexed citations
4.
Da̧browski, J., Marco Lisker, Y. Yamamoto, et al.. (2020). Investigation of the Oxidation Behavior of Graphene/Ge(001) Versus Graphene/Ge(110) Systems. ACS Applied Materials & Interfaces. 12(2). 3188–3197. 10 indexed citations
5.
Sowińska, M., T. Bertaud, Damian Walczyk, et al.. (2014). Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory.. ACS Applied Materials & Interfaces. 6(7). 5056–5060. 55 indexed citations
6.
Niu, Gang, P. Zaumseil, Markus Andreas Schubert, et al.. (2013). Lattice-matched epitaxial ternary PrxY2−xO3 films on SrO-passivated Si (001): Interface engineering and crystallography tailoring. Applied Physics Letters. 102(1). 7 indexed citations
7.
Lippert, G., J. Da̧browski, Y. Yamamoto, et al.. (2012). Molecular beam growth of micrometer-size graphene on mica. Carbon. 52. 40–48. 27 indexed citations
8.
Mehr, Wolfgang, J. Christoph Scheytt, J. Da̧browski, et al.. (2011). Vertical Transistor with a Graphene Base. arXiv (Cornell University). 7 indexed citations
9.
Łupina, Grzegorz, Piotr Dudek, Grzegorz Kozłowski, et al.. (2009). Dielectric Properties of Thin Hf- and Zr-based Alkaline Earth Perovskite Layers. ECS Transactions. 25(6). 147–151. 2 indexed citations
10.
Kissinger, G. & J. Da̧browski. (2008). Oxide Precipitation Via Coherent Seed-Oxide Phases. Journal of The Electrochemical Society. 155(6). H448–H448. 8 indexed citations
11.
Schaefer, Andreas, Thomas Schroeder, Grzegorz Łupina, et al.. (2007). Heteroepitaxial praseodymium sesquioxide films on Si(111): A new model catalyst system for praseodymium oxide based catalysts. Surface Science. 601(6). 1473–1480. 24 indexed citations
12.
Da̧browski, J., et al.. (2005). Rozczynianie jako kluczowy etap efektywnego usuwania czastek kleistych w procesie odbarwiania makulatury. PRZEGLĄD PAPIERNICZY. 61(12). 741–755. 1 indexed citations
13.
Wenger, Christian, R. Sorge, Thomas Schroeder, et al.. (2005). MIM capacitors using amorphous high-k PrTixOy dielectrics. Microelectronic Engineering. 80. 313–316. 16 indexed citations
14.
Da̧browski, J. & Eicke R. Weber. (2004). Predictive simulation of semiconductor processing : status and challenges. Springer eBooks. 6 indexed citations
15.
Da̧browski, J., Christian Wenger, Grzegorz Łupina, et al.. (2004). Ultrathin Dielectric Films Grown by Solid Phase Reaction of Pr with SiO2. MRS Proceedings. 811. 1 indexed citations
16.
Müssig, H.‐J., et al.. (2001). Can Si(113) wafers be an alternative to Si(001)?. Microelectronic Engineering. 56(1-2). 195–203. 17 indexed citations
17.
Müssig, H.‐J., et al.. (1996). Low coverage adsorption of Sb4 on Si(113) studied by scanning tunneling microscopy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(2). 982–987. 9 indexed citations
18.
Wolff, G. A., et al.. (1996). Structural models for Sb on Si(113): an experimental and theoretical STM study. Surface Science. 357-358. 667–672. 11 indexed citations
19.
Da̧browski, J., et al.. (1995). Role of Interstitial Atoms in Microscopic Processes on (113) and (001) Surfaces of Silicon. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 47-48. 57–64. 1 indexed citations
20.
Da̧browski, J. & Matthias Scheffler. (1992). Self-consistent study of the electronic and structural properties of the clean Si(001)(2 × 1) surface. Applied Surface Science. 56-58. 15–19. 215 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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