H. Rinnert

542 total citations
30 papers, 398 citations indexed

About

H. Rinnert is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, H. Rinnert has authored 30 papers receiving a total of 398 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 20 papers in Materials Chemistry and 7 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in H. Rinnert's work include Silicon Nanostructures and Photoluminescence (14 papers), Thin-Film Transistor Technologies (10 papers) and Semiconductor materials and devices (8 papers). H. Rinnert is often cited by papers focused on Silicon Nanostructures and Photoluminescence (14 papers), Thin-Film Transistor Technologies (10 papers) and Semiconductor materials and devices (8 papers). H. Rinnert collaborates with scholars based in France, Russia and Japan. H. Rinnert's co-authors include M. Vergnat, M.S. Aïda, N. Attaf, J. Bougdira, G. Marchal, A. Burneau, M. Stoffel, P. Bourson, A. Dinia and A. Slaoui and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

H. Rinnert

28 papers receiving 384 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Rinnert France 10 328 272 80 54 26 30 398
H.F.W. Dekkers Belgium 15 563 1.7× 272 1.0× 99 1.2× 66 1.2× 18 0.7× 31 601
David Trémouilles France 15 580 1.8× 183 0.7× 48 0.6× 43 0.8× 14 0.5× 65 707
Jerzy Rużyłło United States 11 422 1.3× 324 1.2× 73 0.9× 90 1.7× 39 1.5× 56 518
Jong Shik Jang South Korea 10 257 0.8× 264 1.0× 48 0.6× 74 1.4× 43 1.7× 18 401
Guanglin Kong China 13 418 1.3× 389 1.4× 34 0.4× 91 1.7× 21 0.8× 47 468
İlker Doğan Netherlands 14 325 1.0× 308 1.1× 65 0.8× 115 2.1× 23 0.9× 29 472
Djoudi Bouhafs Algeria 6 272 0.8× 142 0.5× 48 0.6× 76 1.4× 14 0.5× 26 362
Erwann Fourmond France 15 604 1.8× 258 0.9× 199 2.5× 76 1.4× 14 0.5× 39 657
S. V. Jagadeesh Chandra India 12 316 1.0× 235 0.9× 78 1.0× 23 0.4× 9 0.3× 38 395
Sunbo Kim South Korea 15 478 1.5× 270 1.0× 84 1.1× 96 1.8× 15 0.6× 46 510

Countries citing papers authored by H. Rinnert

Since Specialization
Citations

This map shows the geographic impact of H. Rinnert's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Rinnert with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Rinnert more than expected).

Fields of papers citing papers by H. Rinnert

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Rinnert. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Rinnert. The network helps show where H. Rinnert may publish in the future.

Co-authorship network of co-authors of H. Rinnert

This figure shows the co-authorship network connecting the top 25 collaborators of H. Rinnert. A scholar is included among the top collaborators of H. Rinnert based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Rinnert. H. Rinnert is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Володин, В. А., et al.. (2022). IR Photoluminescence of Silicon Irradiated with High-Energy Xe Ions after Annealing. Optoelectronics Instrumentation and Data Processing. 58(6). 633–642.
2.
Володин, В. А., et al.. (2021). Optical properties of GeO[SiO] and GeO[SiO2] solid alloy layers grown at low temperature. Optical Materials. 122. 111736–111736. 6 indexed citations
3.
Володин, В. А., et al.. (2020). Infrared photoluminescence from GeO[SiO2] and GeO[SiO] solid alloy layers irradiated with swift heavy Xe ions. Journal of Luminescence. 223. 117238–117238. 6 indexed citations
4.
Володин, В. А., В.А. Тимофеев, А. И. Никифоров, et al.. (2019). Vibrational and Light-Emitting Properties of Si/Si1−xSnx Heterostructures. Journal of Experimental and Theoretical Physics Letters. 109(6). 368–371. 1 indexed citations
5.
Pigeat, P., Stéphanie Bruyère, H. Rinnert, et al.. (2018). Ultraviolet optical excitation of near infrared emission of Yb-doped crystalline aluminum oxynitride thin films. Journal of Applied Physics. 124(3). 1 indexed citations
6.
Xu, Yong, Weiwei Lin, S. Petit, et al.. (2016). Origins of large light induced voltage in magnetic tunnel junctions grown on semiconductor substrates. Journal of Applied Physics. 119(2). 3 indexed citations
7.
Володин, В. А., et al.. (2016). Structure and infrared photoluminescence of GeSi nanocrystals formed by high temperature annealing of GeOx/SiO2multilayers. Materials Research Express. 3(8). 85019–85019. 16 indexed citations
8.
Easwarakhanthan, T., et al.. (2014). Structural and optical properties of magnetron-sputtered Er-doped AlN films grown under negative substrate bias. Applied Surface Science. 307. 189–196. 7 indexed citations
9.
10.
Dau, Minh Tuan, M. Stoffel, V. Le Thanh, et al.. (2013). Control of tensile strain and interdiffusion in Ge/Si(001) epilayers grown by molecular-beam epitaxy. Journal of Applied Physics. 114(8). 53 indexed citations
11.
Kokanyan, Edvard, et al.. (2012). INFRARED LUMINESCENCE AT 1010 nm AND 1500 nm IN LiNbO3:Er3+ EXCITED BY SHORT PULSE RADIATION AT 980 nm. International Journal of Modern Physics Conference Series. 15. 76–84. 1 indexed citations
12.
Aïda, M.S., et al.. (2012). Cu2ZnSnS4 thin films deposition by ultrasonic spray pyrolysis. Journal of Alloys and Compounds. 542. 22–27. 88 indexed citations
13.
Rinnert, H., Patrice Miska, M. Vergnat, et al.. (2012). Photoluminescence of Nd-doped SnO2 thin films. Applied Physics Letters. 100(10). 53 indexed citations
14.
Bourson, P., et al.. (2008). Polaron luminescence in iron-doped lithium niobate. Applied Physics B. 92(4). 555–561. 13 indexed citations
15.
Molinari, Michaël, H. Rinnert, & M. Vergnat. (2008). Preparation of dense, smooth and homogeneous amorphous silicon nitride films by nitrogen-ion-beam assisted evaporation. Journal of Physics D Applied Physics. 41(17). 175410–175410. 3 indexed citations
16.
Rinnert, H., et al.. (2006). 蒸着GeO x 薄膜の構造と光ルミネセンス特性. Applied Physics Letters. 89(1). 11902–11902. 6 indexed citations
17.
Molinari, Michaël, H. Rinnert, & M. Vergnat. (2003). Correlation between structure and photoluminescence in amorphous hydrogenated silicon nitride alloys. Physica E Low-dimensional Systems and Nanostructures. 16(3-4). 445–449. 10 indexed citations
18.
Rinnert, H. & M. Vergnat. (2002). Enhanced hydrogen stability in a-Si:H thin films evaporated under a flow of energetic argon ions. Applied Surface Science. 193(1-4). 175–179. 2 indexed citations
19.
20.
Rinnert, H., M. Vergnat, G. Marchal, & A. Burneau. (1997). Thermal desorption spectrometry study of Si1−xGex:H amorphous alloys. Applied Surface Science. 119(3-4). 224–228. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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