E. F. Krimmel

504 total citations
43 papers, 383 citations indexed

About

E. F. Krimmel is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, E. F. Krimmel has authored 43 papers receiving a total of 383 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 22 papers in Computational Mechanics and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in E. F. Krimmel's work include Ion-surface interactions and analysis (19 papers), Integrated Circuits and Semiconductor Failure Analysis (16 papers) and Semiconductor materials and devices (16 papers). E. F. Krimmel is often cited by papers focused on Ion-surface interactions and analysis (19 papers), Integrated Circuits and Semiconductor Failure Analysis (16 papers) and Semiconductor materials and devices (16 papers). E. F. Krimmel collaborates with scholars based in Germany, Greece and South Africa. E. F. Krimmel's co-authors include H. Baumann, Κ. Bethge, A. Markwitz, A. Golański, H.-J. Pfleiderer, Wolfgang Grill, P. Misaelides, Christian Maurer, Hartmut Runge and H. Oppolzer and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physics Letters A.

In The Last Decade

E. F. Krimmel

42 papers receiving 366 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. F. Krimmel Germany 12 295 220 131 62 55 43 383
R. V. Knoell United States 11 492 1.7× 208 0.9× 155 1.2× 53 0.9× 228 4.1× 21 600
N. Natsuaki Japan 13 555 1.9× 207 0.9× 102 0.8× 36 0.6× 184 3.3× 48 647
R. W. Bicknell United Kingdom 11 293 1.0× 100 0.5× 113 0.9× 26 0.4× 128 2.3× 23 363
D. Barr United States 10 202 0.7× 96 0.4× 80 0.6× 35 0.6× 28 0.5× 33 268
Patricia G. Blauner United States 10 243 0.8× 188 0.9× 87 0.7× 73 1.2× 37 0.7× 30 374
Yukinori Kurogi Japan 12 326 1.1× 93 0.4× 125 1.0× 33 0.5× 113 2.1× 25 408
R. Shimizu Japan 10 160 0.5× 192 0.9× 96 0.7× 83 1.3× 47 0.9× 23 312
J. P. Gailliard France 12 442 1.5× 159 0.7× 168 1.3× 25 0.4× 305 5.5× 25 540
Mototaka Kamoshida Japan 10 232 0.8× 69 0.3× 68 0.5× 18 0.3× 62 1.1× 34 281
R. Danielou France 12 265 0.9× 89 0.4× 290 2.2× 24 0.4× 114 2.1× 25 432

Countries citing papers authored by E. F. Krimmel

Since Specialization
Citations

This map shows the geographic impact of E. F. Krimmel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. F. Krimmel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. F. Krimmel more than expected).

Fields of papers citing papers by E. F. Krimmel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. F. Krimmel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. F. Krimmel. The network helps show where E. F. Krimmel may publish in the future.

Co-authorship network of co-authors of E. F. Krimmel

This figure shows the co-authorship network connecting the top 25 collaborators of E. F. Krimmel. A scholar is included among the top collaborators of E. F. Krimmel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. F. Krimmel. E. F. Krimmel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Krimmel, E. F.. (2009). Limits of micro-electronics.
2.
Krimmel, E. F., et al.. (1997). Silicon nitride : electronic structure; electrical magnetic, and optical properties; spectra; analysis. Springer eBooks. 1 indexed citations
3.
Markwitz, A., et al.. (1997). Study of electronic properties and depth profiles of buried and near-surface silicon nitride layers produced by ion implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 124(4). 506–514. 3 indexed citations
4.
Markwitz, A., et al.. (1996). Depth profile analysis and study of the electronic properties of silicon nitride layers produced by ion implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 113(1-4). 223–226. 5 indexed citations
5.
Markwitz, A., H. Baumann, E. F. Krimmel, et al.. (1993). Nitrogen profiles of thin sputtered PVD silicon nitride films. Vacuum. 44(3-4). 367–370. 22 indexed citations
6.
Markwitz, A., H. Baumann, E. F. Krimmel, Κ. Bethge, & P. Misaelides. (1993). Characterisation of thin sputtered silicon nitride films by NRA, ERDA, RBS and SEM. Analytical and Bioanalytical Chemistry. 346(1-3). 177–180. 11 indexed citations
7.
Krimmel, E. F., et al.. (1991). Silicon nitride in microelectronics and solar cells. Springer eBooks. 6 indexed citations
8.
Golański, A., et al.. (1987). Photon, beam and plasma enhanced processing. 45 indexed citations
9.
Krimmel, E. F., et al.. (1985). Modelling of dopant profiles modified by diffusing defects in polycrystalline silicon. physica status solidi (a). 88(2). 533–538. 1 indexed citations
10.
11.
Krimmel, E. F., et al.. (1985). An inexpensive electron beam annealing apparatus with line focus, made from a converted electron welding machine. Microelectronics Journal. 16(1). 41–46. 2 indexed citations
12.
Krimmel, E. F., et al.. (1984). Time-resolved scanned electron beam annealing of ion-implanted polycrystalline silicon. Microelectronics Journal. 15(1). 30–37. 2 indexed citations
13.
Krimmel, E. F., et al.. (1984). Fabrication of green-emitting monolithic GaP light-emitting diode displays by laser-induced ablation and ion implantation. Journal of Applied Physics. 55(6). 1617–1618. 2 indexed citations
14.
Heywang, Walter, E. F. Krimmel, & Hartmut Runge. (1979). Annealing mechanism of radiation damage and dopants in pulsed laser light irradiated ion implanted layers. physica status solidi (a). 51(1). K79–K82. 3 indexed citations
15.
Runge, Hartmut & E. F. Krimmel. (1975). Resistors and diodes produced by Al-implantation in silicon. Solid-State Electronics. 18(2). 149–150. 1 indexed citations
16.
Krimmel, E. F., G. Möllenstedt, & W. Rothemund. (1964). MEASUREMENT OF CONTACT POTENTIAL DIFFERENCES BY ELECTRON INTERFEROMETRY. Applied Physics Letters. 5(10). 209–210. 11 indexed citations
17.
Krimmel, E. F., et al.. (1963). Bilder lokaler Aufladungen im Elektronen-Spiegelmikroskop. The European Physical Journal A. 175(3). 235–241. 1 indexed citations
18.
Krimmel, E. F., et al.. (1963). Die wellenoptische Intensit�tsverteilung im Linienfokus von Spektrometern f�r geladene Teilchen. The European Physical Journal A. 176(2). 191–196. 1 indexed citations
19.
Krimmel, E. F., et al.. (1961). Die allgemeine Intensit�tsverteilung in der koh�rent ausgeleuchteten Umgebung einer Kaustikfl�che. The European Physical Journal A. 163(3). 356–362. 1 indexed citations
20.
Krimmel, E. F.. (1960). Koh�rente Teilung eines Elektronenstrahls durch Magnetfelder. The European Physical Journal A. 158(1). 35–38. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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