N. Ashkenov

1.7k total citations · 2 hit papers
19 papers, 1.6k citations indexed

About

N. Ashkenov is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, N. Ashkenov has authored 19 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Materials Chemistry, 12 papers in Electrical and Electronic Engineering and 6 papers in Biomedical Engineering. Recurrent topics in N. Ashkenov's work include ZnO doping and properties (10 papers), Ga2O3 and related materials (5 papers) and Semiconductor materials and devices (5 papers). N. Ashkenov is often cited by papers focused on ZnO doping and properties (10 papers), Ga2O3 and related materials (5 papers) and Semiconductor materials and devices (5 papers). N. Ashkenov collaborates with scholars based in Germany, Sweden and United States. N. Ashkenov's co-authors include M. Schubert, Michael Lorenz, Marius Grundmann, Е. М. Кайдашев, Carsten Bundesmann, D. Spemann, T. Butz, G. Wagner, Vanya Darakchieva and Beri N. Mbenkum and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

N. Ashkenov

19 papers receiving 1.5k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li

2003 581 citations Carsten Bundesmann, N. Ashkenov et al. Applied Physics Letters profile →
Infrared dielectric functions and phonon modes of high-quality ZnO films

2002 562 citations N. Ashkenov, Beri N. Mbenkum et al. Journal of Applied Physics profile →

Peers

Countries citing papers authored by N. Ashkenov

Since Specialization

Citations

This map shows the geographic impact of N. Ashkenov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Ashkenov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Ashkenov more than expected).

Fields of papers citing papers by N. Ashkenov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Ashkenov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Ashkenov. The network helps show where N. Ashkenov may publish in the future.

Co-authorship network of co-authors of N. Ashkenov

This figure shows the co-authorship network connecting the top 25 collaborators of N. Ashkenov. A scholar is included among the top collaborators of N. Ashkenov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Ashkenov. N. Ashkenov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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19 of 19 papers shown

#	Work	Indexed citations
1	Interface polarization coupling in piezoelectric-semiconductor ferroelectric heterostructures 2010 ·Physical Review B ·(unknown), Tino Hofmann, M. Brandt, Michael Lorenz, Marius Grundmann, N. Ashkenov, Heidemarie Schmidt, N. J. Ianno, M. Schubert	38
2	Resistive hysteresis and interface charge coupling in BaTiO3-ZnO heterostructures 2009 ·Applied Physics Letters ·(unknown), Tino Hofmann, M. Schubert, M. Brandt, Michael Lorenz, Marius Grundmann, N. Ashkenov	48
3	Electrical properties of ZnO–BaTiO3–ZnO heterostructures with asymmetric interface charge distribution 2009 ·Applied Physics Letters ·(unknown), Tino Hofmann, M. Brandt, Michael Lorenz, N. Ashkenov, Marius Grundmann, M. Schubert	22
4	Interface-Charge-Coupled Polarization Response of Pt-BaTiO3-ZnO-Pt Heterojunctions: A Physical Model Approach 2008 ·Journal of Electronic Materials ·(unknown), Tino Hofmann, M. Brandt, Michael Lorenz, Marius Grundmann, N. Ashkenov, M. Schubert	19
5	Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO 2007 ·AIP conference proceedings ·Rüdiger Schmidt‐Grund, N. Ashkenov, M. Schubert, (unknown), D. Faltermeier, G. Benndorf, H. Hochmuth, Michael Lorenz, Marius Grundmann	16
6	Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy 2006 ·Applied Physics Letters ·T. Paskova, D. Hommel, Vanya Darakchieva, B. Ḿonemar, Michał Boćkowski, T. Suski, I. Grzegory, Filip Tuomisto, K. Saarinen, N. Ashkenov, M. Schubert	25
7	Bending in HVPE GaN free‐standing films: effects of laser lift‐off, polishing and high‐pressure annealing 2006 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·T. Paskova, Vanya Darakchieva, B. Ḿonemar, Mirko Bukowski, T. Suski, N. Ashkenov, M. Schubert, D. Hommel	3
8	Rectifying semiconductor-ferroelectric polarization loops and offsets in Pt–BaTiO3–ZnO–Pt thin film capacitor structures 2005 ·Thin Solid Films ·N. Ashkenov, M. Schubert, (unknown), Holger von Wenckstern, Beri N. Mbenkum, H. Hochmuth, Michael Lorenz, Wolfgang Grill, Marius Grundmann	25
9	Temperature-dependent dielectric and electro-optic properties of a ZnO-BaTiO3-ZnO heterostructure grown by pulsed-laser deposition 2005 ·Applied Physics Letters ·Beri N. Mbenkum, N. Ashkenov, M. Schubert, Michael Lorenz, H. Hochmuth, D. Michel, Marius Grundmann, G. Wagner	51
10	Adsorption of human serum albumin in porous silicon gradients monitored by spatially‐resolved spectroscopic ellipsometry 2005 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown), M. Schubert, N. Ashkenov, Hans Arwin	4
11	Infrared dielectric functions and crystal orientation of a-plane ZnO thin films on r-plane sapphire determined by generalized ellipsometry 2004 ·Thin Solid Films ·Carsten Bundesmann, N. Ashkenov, M. Schubert, A. Rahm, Holger von Wenckstern, Е. М. Кайдашев, Michael Lorenz, Marius Grundmann	30
12	Protein adsorption in porous silicon gradients monitored by spatially-resolved spectroscopic ellipsometry 2004 ·Thin Solid Films ·(unknown), M. Schubert, N. Ashkenov, Hans Arwin	28
13	Electro-optical properties of ZnO-BaTiO3-ZnO heterostructures grown by pulsed laser deposition 2004 ·Annalen der Physik ·M. Schubert, N. Ashkenov, Tino Hofmann, Michael Lorenz, H. Hochmuth, Holger von Wenckstern, Marius Grundmann, G. Wagner	13
14	Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates 2004 ·Journal of Applied Physics ·Vanya Darakchieva, (unknown), T. Paskova, B. Monemar, N. Ashkenov, M. Schubert	28
15	High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress 2004 ·MRS Proceedings ·(unknown), T. Suski, Michał Boćkowski, T. Paskova, Vanya Darakchieva, B. Monemar, Filip Tuomisto, K. Saarinen, N. Ashkenov, M. Schubert, C. Roder, D. Hommel	2
16	Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers 2003 ·physica status solidi (a) ·Vanya Darakchieva, Tania Paskova, T. Paskova, B. Ḿonemar, N. Ashkenov, M. Schubert	18
17	Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li breakdown → 2003 ·Applied Physics Letters ·Carsten Bundesmann, N. Ashkenov, M. Schubert, D. Spemann, T. Butz, Е. М. Кайдашев, Michael Lorenz, Marius Grundmann	581
18	Infrared dielectric functions and phonon modes of wurtzite MgxZn1−xO (x⩽0.2) 2002 ·Applied Physics Letters ·Carsten Bundesmann, M. Schubert, D. Spemann, T. Butz, Michael Lorenz, Е. М. Кайдашев, Marius Grundmann, N. Ashkenov, H. Neumann, G. Wagner	57
19	Infrared dielectric functions and phonon modes of high-quality ZnO films breakdown → 2002 ·Journal of Applied Physics ·N. Ashkenov, Beri N. Mbenkum, Carsten Bundesmann, V. Riede, Michael Lorenz, D. Spemann, Е. М. Кайдашев, A. Kasic, M. Schubert, Marius Grundmann, G. Wagner, H. Neumann, Vanya Darakchieva, Hans Arwin, B. Ḿonemar	562

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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