Fei Yang

2.2k total citations
114 papers, 1.6k citations indexed

About

Fei Yang is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Fei Yang has authored 114 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 102 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 11 papers in Condensed Matter Physics. Recurrent topics in Fei Yang's work include Silicon Carbide Semiconductor Technologies (75 papers), Semiconductor materials and devices (40 papers) and Electromagnetic Compatibility and Noise Suppression (28 papers). Fei Yang is often cited by papers focused on Silicon Carbide Semiconductor Technologies (75 papers), Semiconductor materials and devices (40 papers) and Electromagnetic Compatibility and Noise Suppression (28 papers). Fei Yang collaborates with scholars based in China, United States and Denmark. Fei Yang's co-authors include Bilal Akin, Shi Pu, Enes Uğur, Chi Xu, Zhiqiang Wang, Bhanu Teja Vankayalapati, Zhenxian Liang, Shuai Zhao, Fred Wang and Fei Wang and has published in prestigious journals such as Water Research, Journal of Power Sources and Journal of The Electrochemical Society.

In The Last Decade

Fei Yang

104 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Fei Yang China 22 1.5k 166 164 132 74 114 1.6k
Olayiwola Alatise United Kingdom 24 2.2k 1.5× 154 0.9× 109 0.7× 191 1.4× 108 1.5× 151 2.3k
Munaf Rahimo Switzerland 26 2.0k 1.4× 96 0.6× 93 0.6× 199 1.5× 95 1.3× 126 2.0k
Xiaoze Pei United Kingdom 18 895 0.6× 279 1.7× 88 0.5× 71 0.5× 261 3.5× 86 1.1k
Petar Igić United Kingdom 17 930 0.6× 135 0.8× 80 0.5× 180 1.4× 187 2.5× 110 1.1k
Mauro Ciappa Switzerland 20 2.2k 1.5× 49 0.3× 165 1.0× 392 3.0× 89 1.2× 126 2.3k
Yvan Avenas France 19 1.4k 1.0× 75 0.5× 48 0.3× 466 3.5× 114 1.5× 77 1.8k
Michele Riccio Italy 24 1.7k 1.2× 184 1.1× 101 0.6× 181 1.4× 40 0.5× 141 1.9k
Liang Wang China 16 906 0.6× 107 0.6× 63 0.4× 28 0.2× 184 2.5× 123 1.1k
Josef Lutz Germany 31 4.0k 2.7× 176 1.1× 247 1.5× 426 3.2× 216 2.9× 192 4.1k
Dimosthenis Peftitsis Norway 25 2.1k 1.5× 101 0.6× 54 0.3× 140 1.1× 200 2.7× 117 2.2k

Countries citing papers authored by Fei Yang

Since Specialization
Citations

This map shows the geographic impact of Fei Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Fei Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Fei Yang more than expected).

Fields of papers citing papers by Fei Yang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Fei Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Fei Yang. The network helps show where Fei Yang may publish in the future.

Co-authorship network of co-authors of Fei Yang

This figure shows the co-authorship network connecting the top 25 collaborators of Fei Yang. A scholar is included among the top collaborators of Fei Yang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Fei Yang. Fei Yang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yang, Fei, et al.. (2025). Mechanical influence mechanisms of silicon anodes in solid-state batteries under low stack pressure. Journal of Power Sources. 652. 237634–237634. 2 indexed citations
2.
Xu, Zhiwei, et al.. (2025). On the Performance and Memory Footprint of Distributed Training: An Empirical Study on Transformers. Software Practice and Experience. 55(7). 1266–1284. 1 indexed citations
3.
4.
5.
Zhang, Wenting, Xinling Tang, Liang Wang, et al.. (2023). Effects of constant voltage stress on bipolar degradation in 4H-SiC IGBT. Journal of Crystal Growth. 605. 127083–127083. 2 indexed citations
6.
Zhou, Hang, Jialin Li, Tao Zhu, et al.. (2023). A review of the etched terminal structure of a 4H-SiC PiN diode. Journal of Semiconductors. 44(11). 113101–113101. 3 indexed citations
7.
Zhang, Wenting, et al.. (2023). Effect of Schottky annealing temperature on reverse leakage current of 6500 V 4H-SiC JBS diodes. Journal of Crystal Growth. 608. 127103–127103. 3 indexed citations
8.
Pu, Shi, et al.. (2022). A Comparative Study on Reliability and Ruggedness of Kelvin and Non-Kelvin Packaged SiC Mosfets. IEEE Transactions on Industry Applications. 58(3). 3863–3874. 12 indexed citations
9.
Hu, Jie, Fei Yang, Changgan Lai, et al.. (2022). Pb 3 (OH) 2 (CO 3 ) 2 -Acetylene Black Composites for Enhanced Hydrogen Evolution Reaction Inhibition of Lead-Acid Batteries. Journal of The Electrochemical Society. 169(6). 60538–60538. 7 indexed citations
10.
Yang, Fei, Die Liu, Zhijun Chen, et al.. (2022). Prediction of Mianyang Carbon Emission Trend Based on Adaptive GRU Neural Network. 747–750. 6 indexed citations
11.
Pu, Shi, Fei Yang, Bhanu Teja Vankayalapati, & Bilal Akin. (2021). Aging Mechanisms and Accelerated Lifetime Tests for SiC MOSFETs: An Overview. IEEE Journal of Emerging and Selected Topics in Power Electronics. 10(1). 1232–1254. 72 indexed citations
12.
Farhadi, Masoud, Fei Yang, Shi Pu, Bhanu Teja Vankayalapati, & Bilal Akin. (2021). Temperature-Independent Gate-Oxide Degradation Monitoring of SiC MOSFETs Based on Junction Capacitances. IEEE Transactions on Power Electronics. 36(7). 8308–8324. 52 indexed citations
13.
Vankayalapati, Bhanu Teja, Shi Pu, Fei Yang, et al.. (2021). Investigation and On-Board Detection of Gate-Open Failure in SiC MOSFETs. IEEE Transactions on Power Electronics. 37(4). 4658–4671. 13 indexed citations
14.
Yang, Fei, Shi Pu, Chi Xu, & Bilal Akin. (2020). Turn-on Delay Based Real-Time Junction Temperature Measurement for SiC MOSFETs With Aging Compensation. IEEE Transactions on Power Electronics. 36(2). 1280–1294. 77 indexed citations
15.
Pu, Shi, Fei Yang, Bhanu Teja Vankayalapati, et al.. (2020). A Practical On-Board SiC MOSFET Condition Monitoring Technique for Aging Detection. IEEE Transactions on Industry Applications. 56(3). 2828–2839. 49 indexed citations
16.
Uğur, Enes, Chi Xu, Fei Yang, Shi Pu, & Bilal Akin. (2020). A New Complete Condition Monitoring Method for SiC Power MOSFETs. IEEE Transactions on Industrial Electronics. 68(2). 1654–1664. 80 indexed citations
17.
Xu, Song, Xiaorong Luo, Jie Wei, et al.. (2020). An ultralow loss 4H-SiC double trenches MOSFET with integrated heterojunction diodes and split gate. Semiconductor Science and Technology. 35(8). 85025–85025. 8 indexed citations
18.
Sun, Hao, Yifei Wu, Yi Wu, et al.. (2019). A new approach for dielectric breakdown calculation of residual hot gas after arc burning based on particle transport and Boltzmann analysis. Journal of Physics D Applied Physics. 52(29). 295205–295205.
19.
Pu, Shi, Enes Uğur, Fei Yang, & Bilal Akin. (2019). In situ Degradation Monitoring of SiC MOSFET Based on Switching Transient Measurement. IEEE Transactions on Industrial Electronics. 67(6). 5092–5100. 56 indexed citations
20.
Chen, Guanghua, et al.. (2011). Monitoring system for vehicle overloading base on paste-type strain sensor. Beijing Hangkong Hangtian Daxue xuebao. 37(4). 409. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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