Qinglin Sai

1.1k total citations
50 papers, 887 citations indexed

About

Qinglin Sai is a scholar working on Materials Chemistry, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Qinglin Sai has authored 50 papers receiving a total of 887 indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Materials Chemistry, 28 papers in Electronic, Optical and Magnetic Materials and 27 papers in Electrical and Electronic Engineering. Recurrent topics in Qinglin Sai's work include Ga2O3 and related materials (28 papers), Advanced Photocatalysis Techniques (23 papers) and ZnO doping and properties (23 papers). Qinglin Sai is often cited by papers focused on Ga2O3 and related materials (28 papers), Advanced Photocatalysis Techniques (23 papers) and ZnO doping and properties (23 papers). Qinglin Sai collaborates with scholars based in China, Egypt and Poland. Qinglin Sai's co-authors include Changtai Xia, Hongji Qi, Xiaodong Xu, H.F. Mohamed, Juqing Di, Wei Zhou, Mingyan Pan, Hongzhe Zhang, Jiliang Si and Dahua Zhou and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and ACS Applied Materials & Interfaces.

In The Last Decade

Qinglin Sai

46 papers receiving 860 citations

Peers

Qinglin Sai

EOMM

EEE

RESE

Rensheng Shen China

Cheol‐Hee Park South Korea

Yen‐Hwei Chang Taiwan

S. Yatsunenko Poland

Dinesh Kumar India

Jinhua He China

M. P. Scheglov Russia

Tristan Koppe Germany

Todd Stefanik United States

Qionghua Mo China

Rensheng Shen China

Qinglin Sai

675 ×0.9

409 ×0.8

EOMM

328 ×0.8

EEE

211 ×0.6

RESE

50 ×0.3

Citations per year, relative to Qinglin Sai Qinglin Sai (= 1×) peers Rensheng Shen

Countries citing papers authored by Qinglin Sai

Since Specialization

Citations

This map shows the geographic impact of Qinglin Sai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Qinglin Sai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Qinglin Sai more than expected).

Fields of papers citing papers by Qinglin Sai

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Qinglin Sai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Qinglin Sai. The network helps show where Qinglin Sai may publish in the future.

Co-authorship network of co-authors of Qinglin Sai

This figure shows the co-authorship network connecting the top 25 collaborators of Qinglin Sai. A scholar is included among the top collaborators of Qinglin Sai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Qinglin Sai. Qinglin Sai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Yi, Xuezhuan, et al.. (2025). Fluorescence Output Enhancement of Ce3+:YAG Transparent Ceramics by Eutectic Soldering Packaging. Materials. 18(5). 1081–1081.

Zhou, Xinlong, Hao Zhang, Y. N. Guo, et al.. (2025). Over 1.2 GW cm⁻² β-Ga₂O₃ SBD with V _br of 1.93 kV realized by O₂ plasma and annealing. Semiconductor Science and Technology. 40(6). 65004–65004.

Ahmed, A.M., et al.. (2024). Tungsten donors doping in β-gallium oxide single crystal. Applied Physics Letters. 125(11). 1 indexed citations

Xu, Guangwei, Qinglin Sai, Hongji Qi, et al.. (2024). Ga vacancies as dominant intrinsic acceptors in Sn-doped β−Ga2O3 revealed by positron annihilation spectroscopy. Physical review. B.. 110(17). 2 indexed citations

Sai, Qinglin, Changtai Xia, Hongji Qi, et al.. (2024). Conduction mechanism and shallow donor defects in Nb-doped β-Ga2O3 single crystals. AIP Advances. 14(4). 4 indexed citations

Mohamed, H.F., Qinglin Sai, Changtai Xia, et al.. (2024). Effect of tin doping on the structural, optical, and dielectric properties of unintentionally β-Ga₂O₃ single crystal. Physica Scripta. 99(7). 75956–75956. 2 indexed citations

Wei, Jinshan, et al.. (2023). The origin of twins in the growth of the (100) plane of a β-Ga₂O₃ crystal using EFG. CrystEngComm. 25(24). 3556–3563. 7 indexed citations

Wei, Jinshan, et al.. (2023). Effect of high-temperature remelting on the properties of Sn-doped β-Ga₂O₃ crystal grown using the EFG method. CrystEngComm. 25(30). 4317–4324. 8 indexed citations

Zhang, Lu, Qinglin Sai, Mingyan Pan, et al.. (2023). Optical and electrical properties of Sb-doped β-Ga2O3 crystals grown by OFZ method. Chinese Optics Letters. 21(4). 41605–41605.

10.

Wan, Lingyu, Changtai Xia, Qinglin Sai, et al.. (2023). The Spatial Correlation and Anisotropy of β-(AlxGa1−x)2O3 Single Crystal. Materials. 16(12). 4269–4269. 1 indexed citations

11.

Pan, Mingyan, et al.. (2022). Crucial Role of Oxygen Vacancies in Scintillation and Optical Properties of Undoped and Al-Doped β-Ga2O3 Single Crystals. Crystals. 12(3). 429–429. 15 indexed citations

12.

Li, Xiaoxi, Yu Sun, Guang Zeng, et al.. (2022). Effective Suppression of MIS Interface Defects Using Boron Nitride toward High-Performance Ta-Doped-β-Ga₂O₃ MISFETs. The Journal of Physical Chemistry Letters. 13(15). 3377–3381. 12 indexed citations

13.

Chen, Jinxin, Xiaoxi Li, Jiajia Tao, et al.. (2020). Fabrication of a Nb-Doped β-Ga₂O₃ Nanobelt Field-Effect Transistor and Its Low-Temperature Behavior. ACS Applied Materials & Interfaces. 12(7). 8437–8445. 29 indexed citations

14.

Sai, Qinglin, et al.. (2019). Analysis on the electronic trap of β-Ga2O3 single crystal. Journal of Materials Science. 54(19). 12643–12649. 41 indexed citations

15.

Mohamed, H.F., et al.. (2019). Growth and fundamentals of bulkβ-Ga₂O₃single crystals. Journal of Semiconductors. 40(1). 11801–11801. 68 indexed citations

16.

Deng, Chenguang, Chongjun He, Qinglin Sai, et al.. (2018). Performance enhancement of white LED with TAG-Al2O3:Ce eutectic phosphor by partial Gd ion substitution. Optik. 160. 176–181. 14 indexed citations

17.

Zou, Zhengting, Lihe Zheng, Juntao Wang, et al.. (2018). Crystal growth and photoluminescence spectra properties of (Yb_xNd_ySc_1−x−y)₂SiO₅ laser crystal. Laser Physics Letters. 15(8). 85703–85703. 3 indexed citations

18.

Zhou, Wei, Changtai Xia, Qinglin Sai, & Hongzhe Zhang. (2017). Controlling n-type conductivity of β-Ga2O3 by Nb doping. Applied Physics Letters. 111(24). 76 indexed citations

19.

Xu, Xiaodong, Dongzhen Li, Juqing Di, et al.. (2017). Optical spectroscopy of Dy 3+ -doped CaGdAlO 4 single crystal for potential use in solid-state yellow lasers. Optical Materials. 66. 469–473. 51 indexed citations

20.

Zhang, Yuewei, et al.. (2014). Sol-gel Synthesis and Photoluminescence Characterization of Ba₂SiO₄:Eu²⁺ Green Phosphors for White-LED Application. Integrated ferroelectrics. 154(1). 128–134. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact