M. Schulz

1.5k total citations
52 papers, 1.2k citations indexed

About

M. Schulz is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, M. Schulz has authored 52 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Electrical and Electronic Engineering, 20 papers in Atomic and Molecular Physics, and Optics and 4 papers in Computational Mechanics. Recurrent topics in M. Schulz's work include Semiconductor materials and devices (26 papers), Silicon and Solar Cell Technologies (21 papers) and Semiconductor materials and interfaces (17 papers). M. Schulz is often cited by papers focused on Semiconductor materials and devices (26 papers), Silicon and Solar Cell Technologies (21 papers) and Semiconductor materials and interfaces (17 papers). M. Schulz collaborates with scholars based in Germany, United States and Belgium. M. Schulz's co-authors include Gerhard Pensl, Michael J. Uren, M. J. Kirton, H. P. Strunk, Kay Hofmann, E. Gmelin, K. Ploog, Renald Schaub, C. H. Holm and K. Heinz and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

M. Schulz

51 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. Schulz Germany	20	993	482	207	124	100	52	1.2k
G. Metze United States	16	945 1.0×	658 1.4×	154 0.7×	53 0.4×	119 1.2×	58	1.1k
C.N. Pannell United Kingdom	19	921 0.9×	574 1.2×	150 0.7×	31 0.3×	200 2.0×	79	1.2k
P. Leuchtmann Switzerland	14	905 0.9×	463 1.0×	142 0.7×	274 2.2×	297 3.0×	53	1.2k
J.P. Krusius United States	13	620 0.6×	180 0.4×	172 0.8×	26 0.2×	87 0.9×	97	753
S. Horiguchi Japan	22	1.6k 1.6×	679 1.4×	298 1.4×	96 0.8×	427 4.3×	82	2.0k
N. G. Tarr Canada	21	1.3k 1.3×	388 0.8×	217 1.0×	50 0.4×	230 2.3×	111	1.4k
M. Bartek Netherlands	18	707 0.7×	167 0.3×	97 0.5×	90 0.7×	288 2.9×	90	853
M.J. Rose United Kingdom	17	576 0.6×	189 0.4×	368 1.8×	47 0.4×	99 1.0×	76	791
T.L.M. Scholtes Netherlands	15	655 0.7×	160 0.3×	136 0.7×	57 0.5×	197 2.0×	56	764
Lei Yuan China	21	1.1k 1.1×	614 1.3×	81 0.4×	44 0.4×	175 1.8×	96	1.3k

Countries citing papers authored by M. Schulz

Since Specialization

Citations

This map shows the geographic impact of M. Schulz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Schulz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Schulz more than expected).

Fields of papers citing papers by M. Schulz

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Schulz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Schulz. The network helps show where M. Schulz may publish in the future.

Co-authorship network of co-authors of M. Schulz

This figure shows the co-authorship network connecting the top 25 collaborators of M. Schulz. A scholar is included among the top collaborators of M. Schulz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Schulz. M. Schulz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Schulz, M., et al.. (2024). Methoden der Politischen Theorie.

Pensl, Gerhard, et al.. (2000). Oxygen-Related Defect Centers in Solar-Grade, Multicrystalline Silicon. A Reservoir of Lifetime Killers. physica status solidi (b). 222(1). 379–387. 14 indexed citations

Baßler, M., V. V. Afanas’ev, Gerhard Pensl, & M. Schulz. (1999). Degradation of 6HSiC MOS capacitors operated at high temperatures. Microelectronic Engineering. 48(1-4). 257–260. 15 indexed citations

Strunk, H. P., et al.. (1999). Formation of amorphous layers by solid-state reaction. from thin Ir films on Si(100). Applied Physics A. 68(4). 451–455. 16 indexed citations

Reinhard, P.‐G., et al.. (1998). Electron transport in ballistic electron emission microscopy. Applied Physics A. 66(7). S897–S900. 1 indexed citations

Schulz, M., et al.. (1997). Statistical evaluation of random telegraph signal amplitudes in sub-μm MOSFETs. Microelectronic Engineering. 36(1-4). 223–226. 2 indexed citations

Schwarz, R., Shiming Zhou, Martin Hundhausen, et al.. (1997). Kinetics of Pt Silicide Formation Studied by Spectral Ellipsometry. MRS Proceedings. 470. 2 indexed citations

Schulz, M., et al.. (1993). Fluctuations of the Au-Si(100) Schottky barrier height. Physical Review Letters. 71(14). 2224–2227. 119 indexed citations

Schulz, M., et al.. (1993). Nanometer-microscopy of the electron transmission through an ultrathin (3?22 nm) Au film and of the Au-Si schottky barrier height. Applied Physics A. 56(1). 1–7. 31 indexed citations

10.

Cabanski, Wolfgang A., et al.. (1992). Infrared photoemission of holes from ultrathin (3?20 nm) Pt/Ir-compound silicide films into silicon. Applied Physics A. 55(2). 180–191. 21 indexed citations

11.

Flohr, T., M. Schulz, & R. T. Tung. (1987). Infrared absorption of epitaxial NiSi2 layers on Si(111). Applied Physics Letters. 51(17). 1343–1345. 3 indexed citations

12.

Reppich, Bernd, et al.. (1986). Duplex γ′ particle hardening of the superalloy Nimonic PE 16. Materials Science and Engineering. 83(1). 45–63. 50 indexed citations

13.

Pensl, Gerhard, et al.. (1986). Fast computer-controlled deep level transient spectroscopy system for versatile applications in semiconductors. Review of Scientific Instruments. 57(7). 1373–1377. 21 indexed citations

14.

Hofmann, Kay & M. Schulz. (1985). Process‐Induced Interface and Bulk States in MOS Structures. Journal of The Electrochemical Society. 132(9). 2201–2208. 22 indexed citations

15.

Dietze, W. T., M. Schulz, H. Weiß, & Otfried Madelung. (1984). Technologie von Si, Ge und SiC. Springer eBooks. 1 indexed citations

16.

Schaub, Renald, Gerhard Pensl, M. Schulz, & C. H. Holm. (1984). Donor states in tellurium-doped silicon. Applied Physics A. 34(4). 215–222. 36 indexed citations

17.

Kuhnert, R., et al.. (1983). Photoconductivity in ion-implanted thin films of Si:In and Si:Tl. Applied Physics A. 30(1). 59–62. 2 indexed citations

18.

Keller, Wolfgang, Gerhard Pensl, & M. Schulz. (1983). Experimental study of the Poole-Frenkel effect on the Si:Tl acceptor. Physica B+C. 116(1-3). 244–251. 6 indexed citations

19.

Ploog, K., et al.. (1982). Assessment of persistent-photoconductivity centers in MBE grown Al x Ga1-x as using capacitance spectroscopy measurements. Applied Physics A. 28(4). 223–227. 52 indexed citations

20.

Pensl, Gerhard, et al.. (1980). Infrared transmissivity of heavily doped contact layers on extrinsic silicon IR-detectors. Applied Physics A. 23(1). 7–14. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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