M. Hohenstein

1.5k total citations
30 papers, 1.1k citations indexed

About

M. Hohenstein is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, M. Hohenstein has authored 30 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Atomic and Molecular Physics, and Optics, 20 papers in Electrical and Electronic Engineering and 18 papers in Materials Chemistry. Recurrent topics in M. Hohenstein's work include Semiconductor Quantum Structures and Devices (19 papers), Advanced Semiconductor Detectors and Materials (13 papers) and Quantum Dots Synthesis And Properties (9 papers). M. Hohenstein is often cited by papers focused on Semiconductor Quantum Structures and Devices (19 papers), Advanced Semiconductor Detectors and Materials (13 papers) and Quantum Dots Synthesis And Properties (9 papers). M. Hohenstein collaborates with scholars based in Germany, Japan and Italy. M. Hohenstein's co-authors include K. Ploog, O. Brandt, R. Nötzel, N. N. Ledentsov, L. Däweritz, R. Bierwolf, F. Phillipp, L. Tapfer, G. E. Crook and R. Cingolani and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

M. Hohenstein

29 papers receiving 1.1k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
M. Hohenstein 937 653 404 161 150 30 1.1k
S. Kohmoto 747 0.8× 511 0.8× 286 0.7× 201 1.2× 138 0.9× 49 958
Tsunenori Sakamoto 778 0.8× 603 0.9× 274 0.7× 120 0.7× 112 0.7× 44 1.0k
Qianghua Xie 1.5k 1.6× 1.2k 1.8× 593 1.5× 184 1.1× 197 1.3× 24 1.6k
C. W. Snyder 963 1.0× 642 1.0× 372 0.9× 151 0.9× 201 1.3× 20 1.2k
S. I. Stenin 794 0.8× 373 0.6× 326 0.8× 188 1.2× 121 0.8× 55 1.1k
Y.-N. Yang 677 0.7× 256 0.4× 194 0.5× 131 0.8× 142 0.9× 31 827
T. Shitara 686 0.7× 427 0.7× 260 0.6× 155 1.0× 188 1.3× 25 877
K. Scheerschmidt 395 0.4× 468 0.7× 284 0.7× 142 0.9× 60 0.4× 63 777
L. González 1.4k 1.5× 1.1k 1.6× 556 1.4× 423 2.6× 133 0.9× 119 1.6k
T. Ikoma 731 0.8× 912 1.4× 398 1.0× 246 1.5× 139 0.9× 63 1.2k

Countries citing papers authored by M. Hohenstein

Since Specialization
Citations

This map shows the geographic impact of M. Hohenstein's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Hohenstein with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Hohenstein more than expected).

Fields of papers citing papers by M. Hohenstein

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Hohenstein. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Hohenstein. The network helps show where M. Hohenstein may publish in the future.

Co-authorship network of co-authors of M. Hohenstein

This figure shows the co-authorship network connecting the top 25 collaborators of M. Hohenstein. A scholar is included among the top collaborators of M. Hohenstein based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Hohenstein. M. Hohenstein is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Alonso, M. I., et al.. (1998). Structural and optical investigation of GalnAs/GaAs {h 11} structures grown by molecular beam epitaxy. Materials Science and Technology. 14(12). 1279–1282.
2.
Eberl, K., Anne Kurtenbach, P. Grambow, et al.. (1994). Preparation of low dimensional structures by molecular beam epitaxy-regrowth on patterned AlGaAs buffer layers. Solid-State Electronics. 37(4-6). 535–538. 2 indexed citations
3.
Hohenstein, M., F. Phillipp, K. Eberl, et al.. (1994). Transmission electron microscopy studies of GaAs/AlGaAs heterostructures regrown on patterned substrates. Semiconductor Science and Technology. 9(12). 2258–2262. 3 indexed citations
4.
Brandt, O., et al.. (1993). Virtual-surfactant-induced wetting in strained-layer heteroepitaxy. Applied Physics A. 56(1). 91–94. 10 indexed citations
5.
Tournié, E., K. H. Ploog, & M. Hohenstein. (1993). Surface stoichiometry and interface formation during molecular-beam epitaxy of strained InAs/AlxGa0.48−xIn0.52As heterostructures. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 11(4). 1388–1391. 2 indexed citations
6.
Nötzel, R., et al.. (1993). Morphology transformations of GaAs high-index surfaces during the initial stages of strained-layer overgrowth. Applied Physics Letters. 62(13). 1472–1474. 20 indexed citations
7.
Alonso, M. I., et al.. (1993). Investigation of InAs submonolayer and monolayer structures on GaAs(100) and (311) substrates. Journal of Applied Physics. 74(12). 7188–7197. 26 indexed citations
8.
Nötzel, R., et al.. (1993). Periodic mesoscopic step arrays by step bunching on high-index GaAs surfaces. Journal of Applied Physics. 74(1). 431–435. 22 indexed citations
9.
Brandt, O., L. Tapfer, K. Ploog, R. Bierwolf, & M. Hohenstein. (1993). Effect of In segregation on the structural and optical properties of ultrathin InAs films in GaAs. Journal of Crystal Growth. 127(1-4). 513–514. 3 indexed citations
10.
Tournié, E., O. Brandt, Cinzia Giannini, K. H. Ploog, & M. Hohenstein. (1993). Virtual-surfactant epitaxy of InAs quantum wells. Journal of Crystal Growth. 127(1-4). 765–769. 9 indexed citations
11.
Brandt, O., L. Tapfer, K. Ploog, R. Bierwolf, & M. Hohenstein. (1992). Effect of In segregation on the structural and optical properties of ultrathin InAs films in GaAs. Applied Physics Letters. 61(23). 2814–2816. 27 indexed citations
12.
Brandt, O., K. Ploog, L. Tapfer, et al.. (1992). Formation and morphology of InAs/GaAs heterointerfaces. Physical review. B, Condensed matter. 45(15). 8443–8453. 56 indexed citations
13.
Hohenstein, M., et al.. (1992). Analytical description of image contrast in HRTEM and application. Ultramicroscopy. 45(2). 167–183. 5 indexed citations
14.
Nötzel, R., N. N. Ledentsov, L. Däweritz, K. Ploog, & M. Hohenstein. (1992). Semiconductor quantum-wire structures directly grown on high-index surfaces. Physical review. B, Condensed matter. 45(7). 3507–3515. 188 indexed citations
15.
Brandt, O., K. Ploog, R. Bierwolf, & M. Hohenstein. (1992). Breakdown of continuum elasticity theory in the limit of monatomic films. Physical Review Letters. 68(9). 1339–1342. 72 indexed citations
16.
Hohenstein, M.. (1991). Reconstruction of the exit surface wave function from experimental HRTEM micrographs. Ultramicroscopy. 35(2). 119–129. 13 indexed citations
17.
Brandt, O., L. Tapfer, K. Ploog, et al.. (1991). InAs quantum dots in a single-crystal GaAs matrix. Physical review. B, Condensed matter. 44(15). 8043–8053. 87 indexed citations
18.
Brandt, O., K. Ploog, L. Tapfer, M. Hohenstein, & F. Phillipp. (1991). Synthesis and structural configuration of highly strained InAs films in GaAs. Journal of Crystal Growth. 115(1-4). 99–105. 4 indexed citations
19.
Sigle, Wilfried, M. Hohenstein, & A. Seeger. (1990). The anisotropy of the threshold energy for atom displacement in silver and gold. Philosophical Magazine Letters. 62(1). 67–73. 7 indexed citations
20.
Bauer, M., Joachim Mayer, M. Hohenstein, & M. Wilkens. (1990). Quantitative Studies on the Amorphization of Quasicrystals by Means of High Voltage Electron Microscopy. physica status solidi (a). 122(1). 79–86. 5 indexed citations

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