M. A. Remennyĭ

868 total citations
91 papers, 714 citations indexed

About

M. A. Remennyĭ is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Spectroscopy. According to data from OpenAlex, M. A. Remennyĭ has authored 91 papers receiving a total of 714 indexed citations (citations by other indexed papers that have themselves been cited), including 86 papers in Electrical and Electronic Engineering, 69 papers in Atomic and Molecular Physics, and Optics and 27 papers in Spectroscopy. Recurrent topics in M. A. Remennyĭ's work include Advanced Semiconductor Detectors and Materials (71 papers), Semiconductor Quantum Structures and Devices (67 papers) and Spectroscopy and Laser Applications (27 papers). M. A. Remennyĭ is often cited by papers focused on Advanced Semiconductor Detectors and Materials (71 papers), Semiconductor Quantum Structures and Devices (67 papers) and Spectroscopy and Laser Applications (27 papers). M. A. Remennyĭ collaborates with scholars based in Russia, France and Finland. M. A. Remennyĭ's co-authors include B. A. Matveev, S. A. Karandashev, N. V. Zotova, N. M. Stus’, N. D. Il’inskaya, G. N. Talalakin, Tom Kuusela, Parthiban Santhanam, Duanni Huang and Rajeev J. Ram and has published in prestigious journals such as ACS Nano, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

M. A. Remennyĭ

86 papers receiving 682 citations

Peers

Countries citing papers authored by M. A. Remennyĭ

Since Specialization

Citations

This map shows the geographic impact of M. A. Remennyĭ's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. A. Remennyĭ with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. A. Remennyĭ more than expected).

Fields of papers citing papers by M. A. Remennyĭ

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. A. Remennyĭ. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. A. Remennyĭ. The network helps show where M. A. Remennyĭ may publish in the future.

Co-authorship network of co-authors of M. A. Remennyĭ

This figure shows the co-authorship network connecting the top 25 collaborators of M. A. Remennyĭ. A scholar is included among the top collaborators of M. A. Remennyĭ based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. A. Remennyĭ. M. A. Remennyĭ is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Current induced cooling in a metal/n-InAs structure 2024 ·RSC Applied Interfaces ·N. D. Il’inskaya, S. A. Karandashev, (unknown), B. A. Matveev, M. A. Remennyĭ, (unknown)	1
2	On heating mechanisms in LEDs based on p-InAsSbP/n-InAs(Sb) 2023 ·Физика и техника полупроводников ·(unknown), S. A. Karandashev, (unknown), (unknown), (unknown), B. A. Matveev, M. A. Remennyĭ, (unknown), (unknown)	2
3	On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb) 2023 ·Semiconductors ·(unknown), S. A. Karandashev, (unknown), (unknown), (unknown), B. A. Matveev, M. A. Remennyĭ, (unknown), (unknown)	0
4	On-Chip ATR Sensor (λ = 3.4 μm) Based on InAsSbP/InAs Double Heterostructure for the Determination of Ethanol Concentration in Aqueous Solutions 2023 ·Optics and Spectroscopy ·S. A. Karandashev, (unknown), (unknown), B. A. Matveev, M. A. Remennyĭ, (unknown)	1
5	Room temperature low frequency noise in n ⁺ -InAs/n-InAsSbP/InAs/p-InAsSbP double heterostructure infrared photodiodes 2019 ·Semiconductor Science and Technology ·N. Dyakonova, S. A. Karandashev, M. E. Levinshteĭn, B. A. Matveev, M. A. Remennyĭ	5
6	InAs-Nanowire-Based Broadband Ultrafast Optical Switch 2019 ·The Journal of Physical Chemistry Letters ·Junting Liu, (unknown), He Yang, Yue Sun, B. A. Matveev, M. A. Remennyĭ, Kejian Yang, Tuomas Haggrén, Harri Lipsanen, Fengqiu Wang, Baitao Zhang, Jingliang He	28
7	Low frequency noise in reverse biased P- InAsSbP /n- InAs infrared photodiodes 2018 ·Semiconductor Science and Technology ·N. Dyakonova, S. A. Karandashev, M. E. Levinshteĭn, B. A. Matveev, M. A. Remennyĭ	6
8	InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes (λ0.1= 5.2 μm, 300 K) operating in the 77–353 К temperature range 2015 ·Infrared Physics & Technology ·P. N. Brunkov, N. D. Il’inskaya, S. A. Karandashev, (unknown), B. A. Matveev, M. A. Remennyĭ, (unknown), (unknown)	11
9	Cooled photodiodes based on a type-II single p-InAsSbP/n-InAs heterostructure 2013 ·Technical Physics Letters ·N. D. Il’inskaya, S. A. Karandashev, (unknown), (unknown), B. A. Matveev, (unknown), M. A. Remennyĭ, (unknown), N. M. Stus’	4
10	2.5.5 Microimmersion lens LEDs for portable photoacoustic methane sensors 2012 ·Proceedings IMCS 2012 ·B. A. Matveev, M. A. Remennyĭ, (unknown), (unknown), Heini Saloniemi, Jyrki Ollila, Tom Kuusela, Ismo Kauppinen	2
11	Properties of mid-IR diodes with n-InAsSbP/n-InAs interface 2010 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·B. A. Matveev, (unknown), N. V. Zotova, S. A. Karandashev, T. V. L’vova, M. A. Remennyĭ, (unknown), N. M. Stus’	7
12	Photoacoustic effect induced by negative luminescence device 2010 ·Journal of Applied Physics ·Tom Kuusela, (unknown), B. A. Matveev, M. A. Remennyĭ, N. M. Stus’	2
13	Optically pumped midinfrared (λ = 3.6 μm) light-emitting diodes based on indium arsenide with photonic crystals 2008 ·Technical Physics Letters ·Yu. M. Zadiranov, N. V. Zotova, N. D. Il’inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyĭ, N. M. Stus’, (unknown)	3
14	Modeling of performance of mid-infrared gas sensors based on immersion lens diode optopairs 2008 ·(unknown), С. Е. Александров, (unknown), (unknown), (unknown), M. A. Remennyĭ	2
15	3.3 μm high brightness LEDs 2005 ·MRS Proceedings ·B. A. Matveev, (unknown), (unknown), S. A. Karandashev, M. A. Remennyĭ, (unknown), (unknown), (unknown), V. G. Polovinkin, (unknown)	1
16	Towards efficient mid-IR LED operation: optical pumping, extraction or injection of carriers? 2002 ·Journal of Modern Optics ·B. A. Matveev, N. V. Zotova, N. D. Il’inskaya, S. A. Karandashev, M. A. Remennyĭ, (unknown), G. N. Talalakin	18
17	Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics 2002 ·Semiconductors ·(unknown), N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyĭ, N. M. Stus’, G. N. Talalakin, (unknown), В. В. Кузнецов, (unknown)	4
18	Towards longwave (5–6 µm) LED operation at 80°C: injection or extraction of carriers? 2002 ·IEE Proceedings - Optoelectronics ·B. A. Matveev, S. A. Karandashev, G. N. Talalakin, M. A. Remennyĭ, N. M. Stus’, N. V. Zotova	23
19	4-μm negative luminescence from p-InAsSbP/n-InAs diodes in the temperature range of 20 to 180 degrees C 2001 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·(unknown), (unknown), S. A. Karandashev, B. A. Matveev, M. A. Remennyĭ, (unknown), G. N. Talalakin, V. K. Malyutenko, (unknown)	3
20	Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3–5 µm 1999 ·Semiconductors ·N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyĭ, N. M. Stus’, G. N. Talalakin	10

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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