N. M. Stus’

431 total citations
57 papers, 356 citations indexed

About

N. M. Stus’ is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Spectroscopy. According to data from OpenAlex, N. M. Stus’ has authored 57 papers receiving a total of 356 indexed citations (citations by other indexed papers that have themselves been cited), including 56 papers in Electrical and Electronic Engineering, 44 papers in Atomic and Molecular Physics, and Optics and 12 papers in Spectroscopy. Recurrent topics in N. M. Stus’'s work include Advanced Semiconductor Detectors and Materials (49 papers), Semiconductor Quantum Structures and Devices (44 papers) and Spectroscopy and Laser Applications (12 papers). N. M. Stus’ is often cited by papers focused on Advanced Semiconductor Detectors and Materials (49 papers), Semiconductor Quantum Structures and Devices (44 papers) and Spectroscopy and Laser Applications (12 papers). N. M. Stus’ collaborates with scholars based in Russia, Ukraine and Germany. N. M. Stus’'s co-authors include B. A. Matveev, M. A. Remennyĭ, N. V. Zotova, S. A. Karandashev, G. N. Talalakin, N. D. Il’inskaya, V. K. Malyutenko, O.D. Podoltsev, А.V. Rogachev and R. N. Kyutt and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Optical Materials.

In The Last Decade

N. M. Stus’

55 papers receiving 343 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
N. M. Stus’ Russia	11	321	261	91	54	31	57	356
G.J. Pryce United Kingdom	11	325 1.0×	294 1.1×	65 0.7×	64 1.2×	58 1.9×	16	391
N. V. Zotova Russia	13	394 1.2×	307 1.2×	131 1.4×	79 1.5×	47 1.5×	58	460
Y. Qiu United States	6	456 1.4×	356 1.4×	114 1.3×	83 1.5×	36 1.2×	14	497
C. A. Shott United States	11	425 1.3×	352 1.3×	121 1.3×	64 1.2×	83 2.7×	20	483
Jill A. Nolde United States	13	365 1.1×	195 0.7×	180 2.0×	38 0.7×	60 1.9×	49	404
C. Schönbein Germany	11	289 0.9×	291 1.1×	131 1.4×	38 0.7×	45 1.5×	16	363
Matvey Finkel Russia	11	177 0.6×	125 0.5×	28 0.3×	55 1.0×	47 1.5×	39	355
J. Muszalski Poland	12	416 1.3×	333 1.3×	100 1.1×	65 1.2×	47 1.5×	72	512
John C. McCarthy United States	9	366 1.1×	290 1.1×	68 0.7×	41 0.8×	10 0.3×	32	408
Jeremy A. Massengale United States	12	282 0.9×	146 0.6×	169 1.9×	23 0.4×	27 0.9×	19	303

Countries citing papers authored by N. M. Stus’

Since Specialization

Citations

This map shows the geographic impact of N. M. Stus’'s research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. M. Stus’ with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. M. Stus’ more than expected).

Fields of papers citing papers by N. M. Stus’

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. M. Stus’. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. M. Stus’. The network helps show where N. M. Stus’ may publish in the future.

Co-authorship network of co-authors of N. M. Stus’

This figure shows the co-authorship network connecting the top 25 collaborators of N. M. Stus’. A scholar is included among the top collaborators of N. M. Stus’ based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. M. Stus’. N. M. Stus’ is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Il’inskaya, N. D., et al.. (2017). P-InAsSbP/p-InAs0.88Sb0.12/n-InAs0.88Sb0.12/n+-InAs PDs with a smooth p-n junction. Infrared Physics & Technology. 88. 223–227. 10 indexed citations

Brunkov, P. N., N. D. Il’inskaya, S. A. Karandashev, et al.. (2014). P-InAsSbP/n 0-InAs/n +-InAs photodiodes for operation at moderate cooling (150–220 K). Semiconductors. 48(10). 1359–1362. 7 indexed citations

Il’inskaya, N. D., et al.. (2013). Cooled photodiodes based on a type-II single p-InAsSbP/n-InAs heterostructure. Technical Physics Letters. 39(9). 818–821. 4 indexed citations

Matveev, B. A., N. V. Zotova, S. A. Karandashev, et al.. (2010). Properties of mid-IR diodes with n-InAsSbP/n-InAs interface. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7597. 75970G–75970G. 7 indexed citations

Kuusela, Tom, et al.. (2010). Photoacoustic effect induced by negative luminescence device. Journal of Applied Physics. 108(1). 2 indexed citations

Zotova, N. V., N. D. Il’inskaya, S. A. Karandashev, et al.. (2009). Room-temperature broadband InAsSb flip-chip photodiodes with λcut off = 4.5 μm. Semiconductors. 43(3). 394–399. 8 indexed citations

Zotova, N. V., N. D. Il’inskaya, S. A. Karandashev, et al.. (2009). Array of InGaAsSb light-emitting diodes (λ = 3.7 μm). Semiconductors. 43(4). 508–513. 1 indexed citations

Matveev, B. A., Yu. M. Zadiranov, N. V. Zotova, et al.. (2009). Midinfrared (λ = 3.6 μm) LEDs and arrays based on InGaAsSb with photonic crystals. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7223. 72231B–72231B. 3 indexed citations

Zadiranov, Yu. M., N. V. Zotova, N. D. Il’inskaya, et al.. (2008). Optically pumped midinfrared (λ = 3.6 μm) light-emitting diodes based on indium arsenide with photonic crystals. Technical Physics Letters. 34(5). 405–407. 3 indexed citations

10.

Zotova, N. V., N. D. Il’inskaya, S. A. Karandashev, et al.. (2008). Sources of spontaneous emission based on indium arsenide. Semiconductors. 42(6). 625–641. 16 indexed citations

11.

Zotova, N. V., et al.. (2007). Performance of InAs-based infrared photodiodes. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6585. 658520–658520. 3 indexed citations

12.

Remennyĭ, M. A., B. A. Matveev, N. V. Zotova, et al.. (2003). InGaAsSb negative luminescent devices with built-in cavities emitting at. Physica E Low-dimensional Systems and Nanostructures. 20(3-4). 548–552. 10 indexed citations

13.

Zotova, N. V., S. A. Karandashev, B. A. Matveev, et al.. (2002). Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics. Semiconductors. 36(8). 944–949. 4 indexed citations

14.

Matveev, B. A., S. A. Karandashev, G. N. Talalakin, et al.. (2002). Towards longwave (5–6 µm) LED operation at 80°C: injection or extraction of carriers?. IEE Proceedings - Optoelectronics. 149(1). 33–35. 23 indexed citations

15.

Zotova, N. V., S. A. Karandashev, B. A. Matveev, et al.. (2001). Optically pumped mid-infrared InGaAs(Sb) LEDs. Semiconductors. 35(3). 357–359. 4 indexed citations

16.

Zotova, N. V., S. A. Karandashev, B. A. Matveev, et al.. (2001). Light emitting diodes for the spectral range λ=3.3–4.3 µm fabricated from InGaAs and InAsSbP solid solutions: Electroluminescence in the temperature range of 20–180°C (Part 2). Semiconductors. 35(5). 598–604. 6 indexed citations

17.

Zotova, N. V., S. A. Karandashev, B. A. Matveev, et al.. (1999). Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3–5 µm. Semiconductors. 33(8). 920–923. 10 indexed citations

18.

Zotova, N. V., S. A. Karandashev, B. A. Matveev, et al.. (1999). Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers. Semiconductors. 33(6). 700–703. 1 indexed citations

19.

Mikhaĭlova, M. P., et al.. (1996). Noncooled InAsSbP/InAs photodiodes for the spectral range 3-5 µm. Technical Physics Letters. 22(8). 672–673. 5 indexed citations

20.

Argunova, T. S., R. N. Kyutt, B. A. Matveev, et al.. (1994). Strain distribution in the binary heterostructures InAsSbP/InGaAsSb. Physics of the Solid State. 36(10). 1633–1636. 1 indexed citations

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