B. A. Matveev

1.2k total citations
121 papers, 955 citations indexed

About

B. A. Matveev is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Spectroscopy. According to data from OpenAlex, B. A. Matveev has authored 121 papers receiving a total of 955 indexed citations (citations by other indexed papers that have themselves been cited), including 110 papers in Electrical and Electronic Engineering, 82 papers in Atomic and Molecular Physics, and Optics and 34 papers in Spectroscopy. Recurrent topics in B. A. Matveev's work include Advanced Semiconductor Detectors and Materials (82 papers), Semiconductor Quantum Structures and Devices (76 papers) and Spectroscopy and Laser Applications (34 papers). B. A. Matveev is often cited by papers focused on Advanced Semiconductor Detectors and Materials (82 papers), Semiconductor Quantum Structures and Devices (76 papers) and Spectroscopy and Laser Applications (34 papers). B. A. Matveev collaborates with scholars based in Russia, Finland and France. B. A. Matveev's co-authors include M. A. Remennyĭ, S. A. Karandashev, N. V. Zotova, N. M. Stus’, G. N. Talalakin, N. D. Il’inskaya, С. Е. Александров, Tom Kuusela, Parthiban Santhanam and Duanni Huang and has published in prestigious journals such as ACS Nano, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

B. A. Matveev

113 papers receiving 910 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. A. Matveev Russia 17 744 591 282 151 141 121 955
M. A. Remennyĭ Russia 14 570 0.8× 468 0.8× 197 0.7× 116 0.8× 99 0.7× 91 714
Jean Nguyen United States 19 1.2k 1.6× 649 1.1× 538 1.9× 76 0.5× 91 0.6× 68 1.4k
S. A. Karandashev Russia 12 424 0.6× 349 0.6× 141 0.5× 75 0.5× 45 0.3× 81 509
Michael K. Connors United States 14 588 0.8× 402 0.7× 257 0.9× 41 0.3× 49 0.3× 49 663
L.J. Missaggia United States 24 1.5k 2.0× 969 1.6× 258 0.9× 50 0.3× 131 0.9× 94 1.7k
S. Tsao United States 17 1.0k 1.4× 679 1.1× 620 2.2× 244 1.6× 140 1.0× 33 1.2k
Sadhvikas Addamane United States 16 477 0.6× 427 0.7× 122 0.4× 127 0.8× 292 2.1× 88 903
Robert Furstenberg United States 14 213 0.3× 177 0.3× 304 1.1× 55 0.4× 206 1.5× 83 716
G. Glastre France 15 652 0.9× 378 0.6× 247 0.9× 42 0.3× 57 0.4× 46 775

Countries citing papers authored by B. A. Matveev

Since Specialization
Citations

This map shows the geographic impact of B. A. Matveev's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. A. Matveev with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. A. Matveev more than expected).

Fields of papers citing papers by B. A. Matveev

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. A. Matveev. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. A. Matveev. The network helps show where B. A. Matveev may publish in the future.

Co-authorship network of co-authors of B. A. Matveev

This figure shows the co-authorship network connecting the top 25 collaborators of B. A. Matveev. A scholar is included among the top collaborators of B. A. Matveev based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. A. Matveev. B. A. Matveev is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Il’inskaya, N. D., et al.. (2024). Current induced cooling in a metal/n-InAs structure. RSC Applied Interfaces. 1(5). 1031–1035. 1 indexed citations
2.
Karandashev, S. A., et al.. (2023). On heating mechanisms in LEDs based on p-InAsSbP/n-InAs(Sb). Физика и техника полупроводников. 57(1). 39–39. 2 indexed citations
3.
Karandashev, S. A., et al.. (2023). On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb). Semiconductors. 57(13). 621–631.
4.
Karandashev, S. A., et al.. (2023). On-Chip ATR Sensor (λ = 3.4 μm) Based on InAsSbP/InAs Double Heterostructure for the Determination of Ethanol Concentration in Aqueous Solutions. Optics and Spectroscopy. 131(1). 31–37. 1 indexed citations
5.
Dyakonova, N., S. A. Karandashev, M. E. Levinshteĭn, B. A. Matveev, & M. A. Remennyĭ. (2019). Room temperature low frequency noise in n + -InAs/n-InAsSbP/InAs/p-InAsSbP double heterostructure infrared photodiodes. Semiconductor Science and Technology. 34(10). 105015–105015. 5 indexed citations
6.
Liu, Junting, He Yang, Yue Sun, et al.. (2019). InAs-Nanowire-Based Broadband Ultrafast Optical Switch. The Journal of Physical Chemistry Letters. 10(15). 4429–4436. 28 indexed citations
7.
Dyakonova, N., S. A. Karandashev, M. E. Levinshteĭn, B. A. Matveev, & M. A. Remennyĭ. (2018). Low frequency noise in reverse biased P- InAsSbP /n- InAs infrared photodiodes. Semiconductor Science and Technology. 34(1). 15013–15013. 6 indexed citations
8.
Brunkov, P. N., et al.. (2015). InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes (λ0.1= 5.2 μm, 300 K) operating in the 77–353 К temperature range. Infrared Physics & Technology. 73. 232–237. 11 indexed citations
9.
Il’inskaya, N. D., et al.. (2013). Cooled photodiodes based on a type-II single p-InAsSbP/n-InAs heterostructure. Technical Physics Letters. 39(9). 818–821. 4 indexed citations
10.
Matveev, B. A., M. A. Remennyĭ, Heini Saloniemi, et al.. (2012). 2.5.5 Microimmersion lens LEDs for portable photoacoustic methane sensors. Proceedings IMCS 2012. 241–243. 2 indexed citations
11.
Matveev, B. A., N. V. Zotova, S. A. Karandashev, et al.. (2010). Properties of mid-IR diodes with n-InAsSbP/n-InAs interface. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7597. 75970G–75970G. 7 indexed citations
12.
Kuusela, Tom, et al.. (2010). Photoacoustic effect induced by negative luminescence device. Journal of Applied Physics. 108(1). 2 indexed citations
13.
Zadiranov, Yu. M., N. V. Zotova, N. D. Il’inskaya, et al.. (2008). Optically pumped midinfrared (λ = 3.6 μm) light-emitting diodes based on indium arsenide with photonic crystals. Technical Physics Letters. 34(5). 405–407. 3 indexed citations
14.
Matveev, B. A., et al.. (2005). 3.3 μm high brightness LEDs. MRS Proceedings. 891. 1 indexed citations
15.
Matveev, B. A., N. V. Zotova, N. D. Il’inskaya, et al.. (2002). Towards efficient mid-IR LED operation: optical pumping, extraction or injection of carriers?. Journal of Modern Optics. 49(5-6). 743–756. 18 indexed citations
16.
Zotova, N. V., S. A. Karandashev, B. A. Matveev, et al.. (2002). Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics. Semiconductors. 36(8). 944–949. 4 indexed citations
17.
Matveev, B. A., S. A. Karandashev, G. N. Talalakin, et al.. (2002). Towards longwave (5–6 µm) LED operation at 80°C: injection or extraction of carriers?. IEE Proceedings - Optoelectronics. 149(1). 33–35. 23 indexed citations
18.
Karandashev, S. A., et al.. (2001). 4-μm negative luminescence from p-InAsSbP/n-InAs diodes in the temperature range of 20 to 180 degrees C. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4355. 161–161. 3 indexed citations
19.
Zotova, N. V., S. A. Karandashev, B. A. Matveev, et al.. (1999). Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3–5 µm. Semiconductors. 33(8). 920–923. 10 indexed citations
20.
Argunova, T. S., R. N. Kyutt, B. A. Matveev, et al.. (1994). Strain distribution in the binary heterostructures InAsSbP/InGaAsSb. Physics of the Solid State. 36(10). 1633–1636. 1 indexed citations

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