G. N. Talalakin

432 total citations
44 papers, 352 citations indexed

About

G. N. Talalakin is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Spectroscopy. According to data from OpenAlex, G. N. Talalakin has authored 44 papers receiving a total of 352 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 31 papers in Atomic and Molecular Physics, and Optics and 13 papers in Spectroscopy. Recurrent topics in G. N. Talalakin's work include Advanced Semiconductor Detectors and Materials (31 papers), Semiconductor Quantum Structures and Devices (28 papers) and Spectroscopy and Laser Applications (13 papers). G. N. Talalakin is often cited by papers focused on Advanced Semiconductor Detectors and Materials (31 papers), Semiconductor Quantum Structures and Devices (28 papers) and Spectroscopy and Laser Applications (13 papers). G. N. Talalakin collaborates with scholars based in Russia, Germany and Ukraine. G. N. Talalakin's co-authors include B. A. Matveev, N. V. Zotova, S. A. Karandashev, M. A. Remennyĭ, N. M. Stus’, N. D. Il’inskaya, С. Е. Александров, D. N. Nasledov, А.V. Rogachev and V. V. Evstropov and has published in prestigious journals such as Applied Physics Letters, Sensors and Actuators B Chemical and Solid State Communications.

In The Last Decade

G. N. Talalakin

43 papers receiving 338 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. N. Talalakin Russia 11 299 225 107 72 34 44 352
N. V. Zotova Russia 13 394 1.3× 307 1.4× 131 1.2× 79 1.1× 47 1.4× 58 460
F. Felder Switzerland 13 331 1.1× 163 0.7× 115 1.1× 94 1.3× 45 1.3× 44 385
M.-C. Amann Germany 14 508 1.7× 286 1.3× 111 1.0× 62 0.9× 37 1.1× 46 597
Sergey Suchalkin United States 15 501 1.7× 426 1.9× 244 2.3× 94 1.3× 29 0.9× 75 606
Jill A. Nolde United States 13 365 1.2× 195 0.9× 180 1.7× 38 0.5× 60 1.8× 49 404
N. M. Stus’ Russia 11 321 1.1× 261 1.2× 91 0.9× 54 0.8× 31 0.9× 57 356
Artur Trajnerowicz Poland 10 173 0.6× 147 0.7× 113 1.1× 76 1.1× 32 0.9× 28 300
Jean‐René Coudevylle France 13 402 1.3× 255 1.1× 86 0.8× 84 1.2× 88 2.6× 39 467
R. Dudek Canada 11 274 0.9× 201 0.9× 171 1.6× 42 0.6× 40 1.2× 23 334
M. Nobile Austria 12 320 1.1× 186 0.8× 244 2.3× 45 0.6× 45 1.3× 25 414

Countries citing papers authored by G. N. Talalakin

Since Specialization
Citations

This map shows the geographic impact of G. N. Talalakin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. N. Talalakin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. N. Talalakin more than expected).

Fields of papers citing papers by G. N. Talalakin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. N. Talalakin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. N. Talalakin. The network helps show where G. N. Talalakin may publish in the future.

Co-authorship network of co-authors of G. N. Talalakin

This figure shows the co-authorship network connecting the top 25 collaborators of G. N. Talalakin. A scholar is included among the top collaborators of G. N. Talalakin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. N. Talalakin. G. N. Talalakin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Remennyĭ, M. A., B. A. Matveev, N. V. Zotova, et al.. (2003). InGaAsSb negative luminescent devices with built-in cavities emitting at. Physica E Low-dimensional Systems and Nanostructures. 20(3-4). 548–552. 10 indexed citations
2.
Remennyĭ, M. A., et al.. (2003). Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3–4.3 μm spectral range. Sensors and Actuators B Chemical. 91(1-3). 256–261. 25 indexed citations
3.
Matveev, B. A., et al.. (2003). Flip-chip bonded InAsSbP and InGaAs LEDs and detectors for the 3-[micro sign]m spectral region. IEE Proceedings - Optoelectronics. 150(4). 356–356. 12 indexed citations
4.
Zotova, N. V., S. A. Karandashev, B. A. Matveev, et al.. (2002). Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics. Semiconductors. 36(8). 944–949. 4 indexed citations
5.
Matveev, B. A., S. A. Karandashev, G. N. Talalakin, et al.. (2002). Towards longwave (5–6 µm) LED operation at 80°C: injection or extraction of carriers?. IEE Proceedings - Optoelectronics. 149(1). 33–35. 23 indexed citations
6.
Matveev, B. A., N. V. Zotova, N. D. Il’inskaya, et al.. (2002). Towards efficient mid-IR LED operation: optical pumping, extraction or injection of carriers?. Journal of Modern Optics. 49(5-6). 743–756. 18 indexed citations
7.
Zotova, N. V., S. A. Karandashev, B. A. Matveev, et al.. (2002). Two-wavelength emission from a GaInPAsSb/InAs structure with a broken-gap isotype heterojunction and a p-n junction in the substrate. Technical Physics Letters. 28(12). 1001–1003. 1 indexed citations
8.
Karandashev, S. A., et al.. (2001). 4-μm negative luminescence from p-InAsSbP/n-InAs diodes in the temperature range of 20 to 180 degrees C. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4355. 161–161. 3 indexed citations
9.
Zotova, N. V., S. A. Karandashev, B. A. Matveev, et al.. (2001). Optically pumped mid-infrared InGaAs(Sb) LEDs. Semiconductors. 35(3). 357–359. 4 indexed citations
10.
11.
Zotova, N. V., S. A. Karandashev, B. A. Matveev, et al.. (2001). Radiative recombination via direct optical transitions in In1 −x GaxAs (0≤x≤0.16) solid solutions. Semiconductors. 35(12). 1369–1371. 1 indexed citations
12.
13.
Zotova, N. V., S. A. Karandashev, B. A. Matveev, et al.. (1999). Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers. Semiconductors. 33(6). 700–703. 1 indexed citations
14.
Zotova, N. V., S. A. Karandashev, B. A. Matveev, et al.. (1999). Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3–5 µm. Semiconductors. 33(8). 920–923. 10 indexed citations
15.
Talalakin, G. N., et al.. (1996). Acoustooptic Modulator for Fibre Optic Gas Sensor Based on Midwave InGaAsSb/InAsSbP Diode Laser. Conference on Lasers and Electro-Optics Europe. CWL4–CWL4. 1 indexed citations
16.
Argunova, T. S., R. N. Kyutt, B. A. Matveev, et al.. (1994). Strain distribution in the binary heterostructures InAsSbP/InGaAsSb. Physics of the Solid State. 36(10). 1633–1636. 1 indexed citations
17.
Karandashev, S. A., et al.. (1993). <title>Nondispersive and multichannel analyzers based on mid-IR LEDs and arrays</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2069. 95–101. 8 indexed citations
18.
Zotova, N. V., et al.. (1985). Gas analyzer based on semiconducting elements. Journal of Applied Spectroscopy. 42(4). 465–467. 17 indexed citations
19.
Nasledov, D. N., et al.. (1965). Dependence of the Thermal E.M.F. on the Hole Concentration in Gallium Arsenide Crystals. physica status solidi (b). 8(3). 7 indexed citations
20.
Nasledov, D. N., et al.. (1965). Effective Mass of Electrons in n‐GaAs. physica status solidi (b). 12(2). 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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