Karen Bowers

958 citations

34 papers · 815 indexed · h-index 16

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 14
Electrical and Electronic Engineering top 5%
- Chalcogenide Semiconductor Thin Films 21
- Semiconductor materials and devices 6
- Semiconductor Lasers and Optical Devices 4
- Silicon and Solar Cell Technologies 3
- Advanced Semiconductor Detectors and Materials 3
Materials Chemistry top 10%
- Quantum Dots Synthesis And Properties 19
- Copper-based nanomaterials and applications 8
Condensed Matter Physics top 10%
Radiation top 10%

Co-authors: J. F. Schetzina J. W. Cook F. Patrick Doty J.F. Butler Jing Ren Lorelle M. Mansfield Y. Lansari R. M. Kolbas
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Materials Chemistry
Partner nations: United States China

In The Last Decade

Karen Bowers

34 papers receiving 785 citations

Peers

Countries citing papers authored by Karen Bowers

Since Specialization

Citations

This map shows the geographic impact of Karen Bowers's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Karen Bowers with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Karen Bowers more than expected).

Fields of papers citing papers by Karen Bowers

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Karen Bowers. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Karen Bowers. The network helps show where Karen Bowers may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Karen Bowers, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Karen Bowers Line = papers co-authored together Karen Bowers links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Large metastability in Cu (In,Ga)Se₂ devices: The importance of buffer properties Ingrid Repins,Stephen Glynn,Timothy J. Silverman,Rebekah L. Garris,Karen Bowers,Bart Stevens,Lorelle M. Mansfield	2019	16
2	The Effects of Absorber Thickness on Reverse-Bias Damage in Cu(In,Ga)Se₂ Solar Cells Lorelle M. Mansfield,Karen Bowers,Stephen Glynn,Ingrid Repins	2019	2
3	Predicting Ga and Cu Profiles in Co-Evaporated Cu(In,Ga)Se2 Using Modified Diffusion Equations and a Spreadsheet Ingrid Repins,Steve Harvey,Karen Bowers,Stephen Glynn,Lorelle M. Mansfield	2017	10
4	Optoelectronic investigation of Sb-doped Cu(In,Ga)Se2 Lorelle M. Mansfield,Darius Kuciauskas,P. Dippo,Jian V. Li,Karen Bowers,Bobby To,Clay DeHart,K. Ramanathan	2015	3
5	The effect of Ga content on the selenization of co-evaporated CuGa/In films and their photovoltaic performance Christopher P. Muzzillo,Lorelle M. Mansfield,Clay DeHart,Karen Bowers,R. C. Reedy,Bobby To,R. Noufi,K. Ramanathan,Timothy J. Anderson	2014	8
6	Heteroepitaxial film crystal silicon on Al2O3 for solar cells on cube-textured metal foil Charles W. Teplin,M. Paranthaman,Thomas R. Fanning,Kirstin Alberi,L. Heatherly,Sung Hun Wee,Hyun Jung Kim,F.A. List,Jerry Pineau,Jon Bornstein,Karen Bowers,Dominic F. Lee,C. Cantoni,Steve Hane,Paul Schroeter,David L. Young,E. Iwaniczko,K. M. Jones,Howard M. Branz	2011	1
7	New developments in 850 and 1300nm VCSELs at JDSU Luke A. Graham,Melinda Schnoes,K. D. Maranowski,Thomas R. Fanning,Max V. Crom,Stewart A. Feld,Matthew H. Gray,Karen Bowers,Steve L. Silva,Kirk Cook,Gayle Schomberger,Ben Gable	2009	6
8	MBE growth and properties of GaN on GaN/SiC substrates Mark A. Johnson,Shizυo Fujita,W. H. Rowland,Karen Bowers,W. C. Hughes,Y. He,N. A. EL MASRY,J. W. Cook,J. F. Schetzina,J. Ren,J. A. Edmond	1997	17
9	Molecular beam epitaxy growth and properties of GaN, AlxGa1−xN, and AlN on GaN/SiC substrates Mark A. Johnson,Shizυo Fujita,W. H. Rowland,Karen Bowers,W. C. Hughes,Yanbo He,N. A. El-Masry,James Cook,J. F. Schetzina,J. Ren,J. A. Edmond	1996	52
10	Properties of highly conducting nitrogen-plasma-doped ZnSe:N thin films Karen Bowers,Z. X. Yu,K. J. Gossett,J. W. Cook,J. F. Schetzina	1994	7
11	Blue/green light emitting diodes and laser diodes based on II–VI heterostructures grown on predeposited GaAs buffer layers Jian Ren,D. B. Eason,Y. Lansari,Zhongliang Yu,Karen Bowers,C. Boney,B. Sneed,James Cook,J. F. Schetzina,Maximilian Koch,G. W. Wicks	1993	6
12	Electrical properties of p-type ZnSe:N thin films Zhiyao Yang,Karen Bowers,Jing Ren,Y. Lansari,J. W. Cook,J. F. Schetzina	1992	29
13	Properties of ZnSe-ZnSe0.9Te0.1 and ZnSe-Zn0.9Cd0.1Se multilayers Jing Ren,Karen Bowers,R. P. Vaudo,J. W. Cook,J. F. Schetzina,Jie Ding,Heonsu Jeon,A. V. Nurmikko	1992	20
14	Properties of CdZnTe crystals grown by a high pressure Bridgman method F. Patrick Doty,J.F. Butler,J. F. Schetzina,Karen Bowers	1992	150
15	Improved ohmic contacts for p-type ZnSe and related p-on-n diode structures Y. Lansari,Jing Ren,B. Sneed,Karen Bowers,J. W. Cook,J. F. Schetzina	1992	72
16	Blue (ZnSe) and green (ZnSe0.9Te0.1) light emitting diodes Jing Ren,Karen Bowers,B. Sneed,F. Everett Reed,J. W. Cook,J. F. Schetzina	1991	20
17	ZnSe light-emitting diodes Jing Ren,Karen Bowers,B. Sneed,D.L. Dreifus,J. W. Cook,J. F. Schetzina,R. M. Kolbas	1990	97
18	Photoluminescence spectroscopy of CdTe grown by photoassisted MBE N. C. Giles,Karen Bowers,R. L. Harper,Sung‐Ho Hwang,J. F. Schetzina	1990	20
19	Growth and Characterization of CDTE and CDTE Alloys S. McDevitt,Davis John .,J. L. Sepich,Karen Bowers,J. F. Schetzina,R.S. Rai,S. Mahajan	1989	4
20	Properties of Chlorine-Doped Zinc Selenide Grown by Molecular Beam Epitaxy Sung‐Ho Hwang,Jun Ren,Karen Bowers,J. W. Cook,J. F. Schetzina	1989	12

About Karen Bowers

Karen Bowers is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 34 papers that have together received 815 indexed citations. Recurring topics across this work include Chalcogenide Semiconductor Thin Films (21 papers), Quantum Dots Synthesis And Properties (19 papers), Semiconductor Quantum Structures and Devices (14 papers), Copper-based nanomaterials and applications (8 papers), Semiconductor materials and devices (6 papers), Semiconductor Lasers and Optical Devices (4 papers), Silicon and Solar Cell Technologies (3 papers) and Advanced Semiconductor Detectors and Materials (3 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (386 citations), Electrical and Electronic Engineering (707 citations) and Materials Chemistry (446 citations). Karen Bowers has collaborated with scholars based in United States and China. Frequent co-authors include J. F. Schetzina, J. W. Cook, F. Patrick Doty, J.F. Butler, Jing Ren, Lorelle M. Mansfield, Y. Lansari, Jing Ren, R. M. Kolbas and D.L. Dreifus.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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