J. Šik

619 total citations
33 papers, 483 citations indexed

About

J. Šik is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. Šik has authored 33 papers receiving a total of 483 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 9 papers in Materials Chemistry. Recurrent topics in J. Šik's work include Semiconductor Quantum Structures and Devices (8 papers), GaN-based semiconductor devices and materials (8 papers) and Advanced X-ray Imaging Techniques (6 papers). J. Šik is often cited by papers focused on Semiconductor Quantum Structures and Devices (8 papers), GaN-based semiconductor devices and materials (8 papers) and Advanced X-ray Imaging Techniques (6 papers). J. Šik collaborates with scholars based in Czechia, United States and Germany. J. Šik's co-authors include M. Schubert, J. Humlı́ček, V. Gottschalch, G. Leibiger, Tino Hofmann, M. Frumar, J. Orava, Ludvı́k Beneš, Jan Přikryl and T. Wágner and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

J. Šik

32 papers receiving 466 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Šik Czechia 11 284 203 186 152 108 33 483
Vladimir A. Stoica United States 12 228 0.8× 159 0.8× 352 1.9× 64 0.4× 104 1.0× 32 547
Yu‐Miin Sheu Taiwan 13 266 0.9× 146 0.7× 283 1.5× 56 0.4× 60 0.6× 40 577
D. H. Tomich United States 13 365 1.3× 248 1.2× 319 1.7× 98 0.6× 105 1.0× 48 643
R. G. Ulbrich Germany 16 352 1.2× 540 2.7× 209 1.1× 97 0.6× 184 1.7× 37 714
Eric M. Jackson United States 20 569 2.0× 434 2.1× 205 1.1× 142 0.9× 93 0.9× 55 873
C. Dubois France 15 536 1.9× 261 1.3× 251 1.3× 91 0.6× 89 0.8× 57 711
E. Koppensteiner Austria 13 276 1.0× 294 1.4× 191 1.0× 80 0.5× 71 0.7× 27 458
O. Pagès France 16 452 1.6× 459 2.3× 375 2.0× 79 0.5× 96 0.9× 74 717
S. S. Jiang China 14 210 0.7× 264 1.3× 264 1.4× 142 0.9× 181 1.7× 66 620
Shyamalendu M. Bose United States 13 89 0.3× 341 1.7× 234 1.3× 120 0.8× 129 1.2× 94 593

Countries citing papers authored by J. Šik

Since Specialization
Citations

This map shows the geographic impact of J. Šik's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Šik with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Šik more than expected).

Fields of papers citing papers by J. Šik

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Šik. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Šik. The network helps show where J. Šik may publish in the future.

Co-authorship network of co-authors of J. Šik

This figure shows the co-authorship network connecting the top 25 collaborators of J. Šik. A scholar is included among the top collaborators of J. Šik based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Šik. J. Šik is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yakovlev, E.V., et al.. (2019). Analysis of strain and dislocation evolution during MOCVD growth of an AlGaN/GaN power high-electron-mobility transistor structure. Japanese Journal of Applied Physics. 58(SC). SCCD26–SCCD26. 6 indexed citations
2.
Humlı́ček, J. & J. Šik. (2015). Optical functions of silicon from reflectance and ellipsometry on silicon-on-insulator and homoepitaxial samples. Journal of Applied Physics. 118(19). 10 indexed citations
3.
Caha, Ondřej, et al.. (2013). Lattice constants and optical response of pseudomorph Si-rich SiGe:B. Applied Physics Letters. 103(20). 202107–202107. 1 indexed citations
4.
Šik, J., et al.. (2011). Polycrystalline Silicon Layers with Enhanced Thermal Stability. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 178-179. 385–391. 1 indexed citations
5.
Hofmann, Tino, et al.. (2010). Free-charge carrier profile of iso- and aniso-type Si homojunctions determined by terahertz and mid-infrared ellipsometry. Thin Solid Films. 519(9). 2604–2607. 5 indexed citations
6.
Hudec, R., et al.. (2009). New lightweight x-ray optics: alternative materials. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7360. 736016–736016. 1 indexed citations
7.
Hudec, R., J. Šik, M. Lorenc, et al.. (2008). Recent progress with x-ray optics based on Si wafers and glass foils. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7011. 701116–701116. 2 indexed citations
8.
Orava, J., J. Šik, T. Wágner, & M. Frumar. (2008). Optical properties of As33S67−xSex bulk glasses studied by spectroscopic ellipsometry. Journal of Applied Physics. 103(8). 25 indexed citations
9.
Orava, J., T. Wágner, J. Šik, et al.. (2008). Optical properties and phase change transition in Ge2Sb2Te5 flash evaporated thin films studied by temperature dependent spectroscopic ellipsometry. Journal of Applied Physics. 104(4). 82 indexed citations
10.
Hudec, R., A. Inneman, Martin Míka, et al.. (2007). Si and Glass - Novel Technologies for Space. Nuclear Physics B - Proceedings Supplements. 166. 258–261. 1 indexed citations
11.
Šik, J., et al.. (2007). OISF Pattern and Grown-in Precipitates in Heavily Boron Doped Silicon. Journal of The Electrochemical Society. 154(10). H904–H904. 6 indexed citations
12.
Hudec, R., L. Pı́na, A. Inneman, et al.. (2006). Novel x-ray optics with Si wafers and formed glass. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5 indexed citations
13.
Harmatha, L., et al.. (2005). Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study. Microelectronics Journal. 37(4). 283–289. 4 indexed citations
14.
Hudec, R., L. Pı́na, A. Inneman, et al.. (2005). Novel technologies for x-ray multi-foil optics. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5900. 59000Y–59000Y. 3 indexed citations
15.
Šik, J., M. Schubert, G. Leibiger, V. Gottschalch, & G. Wagner. (2001). Band-gap energies, free carrier effects, and phonon modes in strained GaNAs/GaAs and GaNAs/InAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry. Journal of Applied Physics. 89(1). 294–305. 40 indexed citations
16.
Leibiger, G., V. Gottschalch, B. Rheinländer, J. Šik, & M. Schubert. (2001). Model dielectric function spectra of GaAsN for far-infrared and near-infrared to ultraviolet wavelengths. Journal of Applied Physics. 89(9). 4927–4938. 26 indexed citations
17.
18.
Leibiger, G., V. Gottschalch, B. Rheinländer, J. Šik, & M. Schubert. (2000). Nitrogen dependence of the GaAsN interband critical points E1 and E1+Δ1 determined by spectroscopic ellipsometry. Applied Physics Letters. 77(11). 1650–1652. 37 indexed citations
19.
Navrátil, K., J. Šik, J. Humlı́ček, & S. Nešpůrek. (1999). Optical properties of thin films of poly(methyl–phenylsilylene). Optical Materials. 12(1). 105–113. 23 indexed citations
20.
Šik, J., et al.. (1998). Optical functions of silicon at high temperatures. Journal of Applied Physics. 84(11). 6291–6298. 67 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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