K. S. Stevens

720 total citations
32 papers, 603 citations indexed

About

K. S. Stevens is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, K. S. Stevens has authored 32 papers receiving a total of 603 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 15 papers in Condensed Matter Physics and 14 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in K. S. Stevens's work include GaN-based semiconductor devices and materials (15 papers), Semiconductor Quantum Structures and Devices (11 papers) and Semiconductor materials and devices (9 papers). K. S. Stevens is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), Semiconductor Quantum Structures and Devices (11 papers) and Semiconductor materials and devices (9 papers). K. S. Stevens collaborates with scholars based in United States, Taiwan and Georgia. K. S. Stevens's co-authors include R. Beresford, Akira Ohtani, N. M. Johnson, A. F. Schwartzman, J. Walker, W. B. Jackson, Christoph E. Nebel, P. V. Santos, R. A. Street and N. M. Johnson and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Physics Condensed Matter.

In The Last Decade

K. S. Stevens

31 papers receiving 579 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. S. Stevens United States 12 385 347 220 170 154 32 603
Li Chang Taiwan 12 349 0.9× 256 0.7× 208 0.9× 88 0.5× 180 1.2× 33 502
O. H. Nam South Korea 10 337 0.9× 203 0.6× 170 0.8× 92 0.5× 111 0.7× 15 425
H. P. D. Schenk France 17 595 1.5× 238 0.7× 254 1.2× 216 1.3× 267 1.7× 41 705
A. S. Zubrilov Russia 15 495 1.3× 349 1.0× 243 1.1× 70 0.4× 229 1.5× 58 654
J.C. de Jaeger France 13 437 1.1× 424 1.2× 176 0.8× 55 0.3× 203 1.3× 39 630
V. M. Phanse United States 10 579 1.5× 323 0.9× 275 1.3× 99 0.6× 255 1.7× 14 708
Lisa Sugiura Japan 11 480 1.2× 215 0.6× 213 1.0× 125 0.7× 172 1.1× 23 575
B. Schineller Germany 14 497 1.3× 307 0.9× 252 1.1× 68 0.4× 233 1.5× 72 640
B. Borisov United States 15 639 1.7× 310 0.9× 304 1.4× 143 0.8× 424 2.8× 43 788
R. D. Horning United States 12 298 0.8× 314 0.9× 168 0.8× 53 0.3× 103 0.7× 31 577

Countries citing papers authored by K. S. Stevens

Since Specialization
Citations

This map shows the geographic impact of K. S. Stevens's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. S. Stevens with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. S. Stevens more than expected).

Fields of papers citing papers by K. S. Stevens

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. S. Stevens. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. S. Stevens. The network helps show where K. S. Stevens may publish in the future.

Co-authorship network of co-authors of K. S. Stevens

This figure shows the co-authorship network connecting the top 25 collaborators of K. S. Stevens. A scholar is included among the top collaborators of K. S. Stevens based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. S. Stevens. K. S. Stevens is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Huang, Cong, P.J. Zampardi, Koen Buisman, et al.. (2010). A GaAs Junction Varactor With a Continuously Tunable Range of 9 : 1 and an $OIP_{3}$ of 57 dBm. IEEE Electron Device Letters. 31(2). 108–110. 12 indexed citations
2.
Pan, N., et al.. (2001). Reliability of InGaP and AlGaAs HBT. IEICE Transactions on Electronics. 84(10). 1366–1372. 1 indexed citations
3.
Welser, Roger E., P.M. DeLuca, K. S. Stevens, et al.. (2001). Pathway for HBT Turn-on Voltage Reduction on a GaAs Platform. 2 indexed citations
4.
Stevens, K. S., et al.. (2001). Enhanced Performance GaAs-Based HBTs using a GaInNAs Base Layer. AMS Acta (University of Bologna). 2 indexed citations
5.
Fay, Patrick, et al.. (2000). Gate length scaling in high performance InGaP/InGaAs/GaAs pHEMTs. IEEE Electron Device Letters. 21(4). 141–143. 7 indexed citations
6.
Fay, Patrick, et al.. (1999). Performance dependence of InGaP/InGaAs/GaAs pHEMTs on gate metallization. IEEE Electron Device Letters. 20(11). 554–556. 4 indexed citations
7.
Sánchez-Garcı́a, M. A., F.J. Sánchez, F. Calle, et al.. (1996). Optical and electrical characterization of GaN layers grown on silicon and sapphire substrates. Solid-State Electronics. 40(1-8). 81–84. 2 indexed citations
8.
Beresford, R., et al.. (1995). Epitaxial Growth of GaN on Lattice-Matched Hafnium Substrates. MRS Proceedings. 395. 3 indexed citations
9.
Stevens, K. S., et al.. (1995). Photoconductive ultraviolet sensor using Mg-doped GaN on Si(111). Applied Physics Letters. 66(25). 3518–3520. 112 indexed citations
10.
Beresford, R., et al.. (1995). Influence of substrate electrical bias on the growth of GaN in plasma-assisted epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(2). 792–795. 10 indexed citations
11.
Ohtani, Akira, et al.. (1995). Analysis and optimization of the electron cyclotron resonance plasma for nitride epitaxy. Journal of Crystal Growth. 150. 902–907. 10 indexed citations
12.
Stevens, K. S., et al.. (1994). Microstructure of AlN on Si (111) grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 65(3). 321–323. 85 indexed citations
13.
Ohtani, Akira, K. S. Stevens, & R. Beresford. (1994). Growth and Characterization of GaN on Si(111). MRS Proceedings. 339. 2 indexed citations
14.
Stevens, K. S., Akira Ohtani, A. F. Schwartzman, & R. Beresford. (1994). Growth of group III nitrides on Si(111) by plasma-assisted molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 12(2). 1186–1189. 26 indexed citations
15.
Johnson, N. M., et al.. (1992). Effect of helium dilution during plasma-enhanced deposition on electron trapping in silicon dioxide thin films. Applied Physics Letters. 60(6). 695–697. 4 indexed citations
16.
Johnson, N. M., P. V. Santos, J. Walker, & K. S. Stevens. (1991). Kinetics of Gas-Phase Chemical Reactions and Growth of a-SiC:H Films from Silane and Acetylene in a Remote Hydrogen Plasma Reactor. MRS Proceedings. 219. 2 indexed citations
17.
Johnson, N. M., J. Walker, & K. S. Stevens. (1991). Characterization of a remote hydrogen plasma reactor with electron spin resonance. Journal of Applied Physics. 69(4). 2631–2634. 34 indexed citations
18.
Stevens, K. S. & N. M. Johnson. (1991). Measurement of Intrinsic Stress in a-Si:H thin films Deposited in a Remote Hydrogen Plasma Reactor. MRS Proceedings. 219. 5 indexed citations
19.
Johnson, N. M., P. V. Santos, Christoph E. Nebel, et al.. (1991). Stability of a-Si:H deposited at high temperatures and hydrogen dilution in a remote hydrogen plasma reactor. Journal of Non-Crystalline Solids. 137-138. 235–238. 14 indexed citations
20.
Johnson, N. M., Christoph E. Nebel, P. V. Santos, et al.. (1991). Stability of hydrogenated amorphous silicon deposited at high temperatures with a remote hydrogen plasma. Applied Physics Letters. 59(12). 1443–1445. 48 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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