K. Rousseau

428 total citations
17 papers, 337 citations indexed

About

K. Rousseau is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, K. Rousseau has authored 17 papers receiving a total of 337 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Atomic and Molecular Physics, and Optics, 10 papers in Electrical and Electronic Engineering and 5 papers in Biomedical Engineering. Recurrent topics in K. Rousseau's work include Semiconductor materials and interfaces (9 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers) and Nanowire Synthesis and Applications (5 papers). K. Rousseau is often cited by papers focused on Semiconductor materials and interfaces (9 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers) and Nanowire Synthesis and Applications (5 papers). K. Rousseau collaborates with scholars based in France, Netherlands and Germany. K. Rousseau's co-authors include Frank Fournel, Jean‐Luc Rouvière, H. Moriceau, J. Eymery, Fabien Rouillard, Kevin Ginestar, N. Magnéa, Clara Desgranges, Michel Tabarant and Laure Martinelli and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Electrochimica Acta.

In The Last Decade

K. Rousseau

17 papers receiving 329 citations

Peers

K. Rousseau

AMPO

EEE

Shanthi Subramanian United States

Sateesh S. Bajikar United States

L. L. Li China

J. Crestou France

J. A. Sutliff United States

Cheng-Han Lin Taiwan

P. Gondi Italy

H. Rauh Germany

D. Mangelinck France

Toru Takayama Japan

Shanthi Subramanian United States

K. Rousseau

148 ×0.9

97 ×0.7

AMPO

133 ×1.1

EEE

25 ×0.3

60 ×1.0

Citations per year, relative to K. Rousseau K. Rousseau (= 1×) peers Shanthi Subramanian

Countries citing papers authored by K. Rousseau

Since Specialization

Citations

This map shows the geographic impact of K. Rousseau's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Rousseau with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Rousseau more than expected).

Fields of papers citing papers by K. Rousseau

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Rousseau. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Rousseau. The network helps show where K. Rousseau may publish in the future.

Co-authorship network of co-authors of K. Rousseau

This figure shows the co-authorship network connecting the top 25 collaborators of K. Rousseau. A scholar is included among the top collaborators of K. Rousseau based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Rousseau. K. Rousseau is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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17 of 17 papers shown

Gwinner, B., et al.. (2017). Dissolution and Passivation of a Silicon-Rich Austenitic Stainless Steel during Active-Passive Cycles in Sulfuric and Nitric Acid. Journal of The Electrochemical Society. 164(13). C892–C900. 22 indexed citations

Gwinner, B., et al.. (2017). The kinetics of transpassive dissolution chemistry of stainless steels in nitric acid: The impact of Si. Electrochimica Acta. 258. 653–661. 26 indexed citations

Lambert, Benoît, et al.. (2017). Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging. Microelectronics Reliability. 76-77. 344–349. 4 indexed citations

Martinelli, Laure, Clara Desgranges, Fabien Rouillard, et al.. (2015). Comparative oxidation behaviour of Fe-9Cr steel in CO 2 and H 2 O at 550 °C: Detailed analysis of the inner oxide layer. Corrosion Science. 100. 253–266. 69 indexed citations

Boulle, Olivier, K. Rousseau, G. Malinowski, et al.. (2010). Current-induced domain wall motion in Co/Pt nanowires: Separating spin torque and Oersted-field effects. Applied Physics Letters. 96(20). 41 indexed citations

Rouvière, Jean‐Luc, Frédéric Lançon, K. Rousseau, et al.. (2010). Structure of an incommensurate 90° Si grain boundary resolved with the help of a Cs-corrector for illumination. Journal of Physics Conference Series. 209. 12041–12041. 2 indexed citations

Rousseau, K., et al.. (2007). Optimized FIB silicon samples suitable for lattice parameters measurements by convergent beam electron diffraction. Micron. 39(3). 294–301. 8 indexed citations

Rousseau, K., J. Eymery, Frank Fournel, J. P. Morniroli, & Jean‐Luc Rouvière. (2005). (001) silicon surfacial grain boundaries obtained by direct wafer bonding process: accurate control of the structure before bonding. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics. 85(21). 2415–2448. 6 indexed citations

Bonnet, R., K. Rousseau, & Frank Fournel. (2002). Analyse du contraste d'un sous-joint de torsion (0 0 1) dans le silicium en MET à deux ondes. Comptes Rendus Physique. 3(5). 657–663. 6 indexed citations

10.

Rousseau, K., Jean‐Luc Rouvière, Frank Fournel, & H. Moriceau. (2002). Stability of interfacial dislocations in (001) silicon surfacial grain boundaries. Applied Physics Letters. 80(22). 4121–4123. 20 indexed citations

11.

Buttard, D., J. Eymery, Frank Fournel, et al.. (2002). Toward two-dimensional self-organization of nanostructures using wafer bonding and nanopatterned silicon surfaces. IEEE Journal of Quantum Electronics. 38(8). 995–1005. 9 indexed citations

12.

Fournel, Frank, H. Moriceau, B. Aspar, et al.. (2002). Accurate control of the misorientation angles in direct wafer bonding. Applied Physics Letters. 80(5). 793–795. 48 indexed citations

13.

Rousseau, K., Jean‐Luc Rouvière, Frank Fournel, & H. Moriceau. (2001). Structural characterization of ultra-thin (0 0 1) silicon films bonded onto (0 0 1) silicon wafers:. Materials Science in Semiconductor Processing. 4(1-3). 101–104. 11 indexed citations

14.

Eymery, J., Frank Fournel, K. Rousseau, et al.. (2001). Dislocation Networks Strain Fields Induced By Si Wafer Bonding.. MRS Proceedings. 673. 4 indexed citations

15.

Fournel, Frank, H. Moriceau, N. Magnéa, et al.. (2000). Ultra thin silicon films directly bonded onto silicon wafers. Materials Science and Engineering B. 73(1-3). 42–46. 21 indexed citations

16.

Fournel, Frank, H. Moriceau, N. Magnéa, et al.. (2000). Nanometric patterning with ultrathin twist bonded silicon wafers. Thin Solid Films. 380(1-2). 10–14. 10 indexed citations

17.

Rouvière, Jean‐Luc, K. Rousseau, Frank Fournel, & H. Moriceau. (2000). Huge differences between low- and high-angle twist grain boundaries: The case of ultrathin (001) Si films bonded to (001) Si wafers. Applied Physics Letters. 77(8). 1135–1137. 30 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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