J. Crestou

400 total citations
12 papers, 334 citations indexed

About

J. Crestou is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. Crestou has authored 12 papers receiving a total of 334 indexed citations (citations by other indexed papers that have themselves been cited), including 7 papers in Electrical and Electronic Engineering, 5 papers in Atomic and Molecular Physics, and Optics and 5 papers in Materials Chemistry. Recurrent topics in J. Crestou's work include Semiconductor Quantum Structures and Devices (3 papers), Integrated Circuits and Semiconductor Failure Analysis (3 papers) and Semiconductor materials and interfaces (2 papers). J. Crestou is often cited by papers focused on Semiconductor Quantum Structures and Devices (3 papers), Integrated Circuits and Semiconductor Failure Analysis (3 papers) and Semiconductor materials and interfaces (2 papers). J. Crestou collaborates with scholars based in France and Poland. J. Crestou's co-authors include A. Coujou, J. Douin, P. Castany, Florence Pettinari‐Sturmel, D. Caillard, Alain Couret, G. Molénat, N. Clément, O. Kaı̈tasov and M.-O. Ruault and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Acta Materialia.

In The Last Decade

J. Crestou

12 papers receiving 320 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Crestou France	8	203	133	117	80	74	12	334
Jan Hartford Sweden	6	282 1.4×	193 1.5×	76 0.6×	51 0.6×	149 2.0×	9	395
F. Sequeda United States	10	227 1.1×	105 0.8×	78 0.7×	132 1.6×	232 3.1×	25	386
Shanthi Subramanian United States	8	148 0.7×	81 0.6×	97 0.8×	133 1.7×	45 0.6×	14	321
L.L. Horton United States	8	231 1.1×	197 1.5×	67 0.6×	65 0.8×	85 1.1×	14	400
M. Charleux France	9	329 1.6×	246 1.8×	133 1.1×	161 2.0×	89 1.2×	11	469
A. V. Samant United States	9	110 0.5×	130 1.0×	73 0.6×	264 3.3×	71 1.0×	15	398
S. Shima Japan	12	157 0.8×	152 1.1×	52 0.4×	87 1.1×	85 1.1×	29	321
L. L. Li China	8	344 1.7×	239 1.8×	141 1.2×	54 0.7×	103 1.4×	9	474
V.A. Ivanov Germany	6	329 1.6×	216 1.6×	41 0.4×	65 0.8×	74 1.0×	13	366
I. M. Vinitskii Ukraine	3	261 1.3×	273 2.1×	125 1.1×	104 1.3×	128 1.7×	7	490

Countries citing papers authored by J. Crestou

Since Specialization

Citations

This map shows the geographic impact of J. Crestou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Crestou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Crestou more than expected).

Fields of papers citing papers by J. Crestou

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Crestou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Crestou. The network helps show where J. Crestou may publish in the future.

Co-authorship network of co-authors of J. Crestou

This figure shows the co-authorship network connecting the top 25 collaborators of J. Crestou. A scholar is included among the top collaborators of J. Crestou based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Crestou. J. Crestou is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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12 of 12 papers shown

Żytkiewicz, Z. R., et al.. (2007). Tilt and dislocations in epitaxial laterally overgrown GaAs layers. Journal of Applied Physics. 101(1). 12 indexed citations

Castany, P., Florence Pettinari‐Sturmel, J. Crestou, J. Douin, & A. Coujou. (2007). Experimental study of dislocation mobility in a Ti–6Al–4V alloy. Acta Materialia. 55(18). 6284–6291. 117 indexed citations

Mompiou, F., J. Crestou, & D. Caillard. (2004). Dislocation climb in an Al–Pd–Mn quasicrystal deformed at low temperature. Materials Science and Engineering A. 387-389. 89–92. 1 indexed citations

Levade, C., et al.. (2000). Transmission electron microscopy study of crystal defects in ZnSe/GaAs(001) epilayers. Journal of Physics Condensed Matter. 12(49). 10287–10293. 5 indexed citations

Fougères, P., M. Hage‐Ali, J.M. Koebel, et al.. (1998). Properties of Cd1−xZnxTe crystals grown by high pressure Bridgman for nuclear detection. Journal of Crystal Growth. 184-185. 1313–1318. 23 indexed citations

Lépine, Bruno, A. Guivarc’h, G. Jézéquel, et al.. (1998). Solid state interdiffusions in epitaxial Fe/GaAs(001) heterostructures during ultrahigh vacuum annealings up to 450 °C. Journal of Applied Physics. 83(6). 3077–3080. 50 indexed citations

Ruault, M.-O., O. Kaı̈tasov, R. Triboulet, J. Crestou, & M. Gasgnier. (1994). Electron microscopy observation of phase separation in bulk Cd0.96Zn0.04Te crystals. Journal of Crystal Growth. 143(1-2). 40–45. 20 indexed citations

Caillard, D., Alain Couret, G. Molénat, & J. Crestou. (1993). In situ straining experiments in weak-beam conditions. Microscopy Microanalysis Microstructures. 4(2-3). 183–190. 5 indexed citations

Couret, Alain, J. Crestou, G. Molénat, et al.. (1993). In situ deformation in T.E.M.: recent developments. Microscopy Microanalysis Microstructures. 4(2-3). 153–170. 78 indexed citations

10.

Claverie, A., et al.. (1993). Formation of P precipitates during annealing of InP grown by gas source molecular beam epitaxy at low temperature. Applied Physics Letters. 62(14). 1638–1640. 12 indexed citations

11.

Ruault, M.-O., et al.. (1991). High resolution electron microscopy study of damage created in Si-implanted InP. Applied Physics Letters. 59(13). 1594–1596. 1 indexed citations

12.

Ruault, M.-O., et al.. (1990). In situ defect studies on Si⁺implanted InP. Journal of Physics D Applied Physics. 23(7). 877–883. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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