T. Šimeček

437 total citations
42 papers, 348 citations indexed

About

T. Šimeček is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, T. Šimeček has authored 42 papers receiving a total of 348 indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 34 papers in Atomic and Molecular Physics, and Optics and 12 papers in Materials Chemistry. Recurrent topics in T. Šimeček's work include Semiconductor Quantum Structures and Devices (32 papers), Advanced Semiconductor Detectors and Materials (21 papers) and Semiconductor Lasers and Optical Devices (12 papers). T. Šimeček is often cited by papers focused on Semiconductor Quantum Structures and Devices (32 papers), Advanced Semiconductor Detectors and Materials (21 papers) and Semiconductor Lasers and Optical Devices (12 papers). T. Šimeček collaborates with scholars based in Czechia, Russia and France. T. Šimeček's co-authors include E. Hulicius, J. Pangrác, J. Oswald, Květoslav Růžička, V. Vorlı́ček, Michal Fulem, Vlastimil Růžička, Yu. P. Yakovlev, A. Hospodková and K. D. Moiseev and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Solar Energy Materials and Solar Cells.

In The Last Decade

T. Šimeček

40 papers receiving 328 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Šimeček Czechia 11 242 214 161 63 47 42 348
Cole Ritter United States 8 213 0.9× 131 0.6× 123 0.8× 62 1.0× 38 0.8× 15 356
D. A. Muzychenko Russia 12 98 0.4× 225 1.1× 200 1.2× 49 0.8× 23 0.5× 43 332
M. Zigone France 13 273 1.1× 269 1.3× 235 1.5× 71 1.1× 25 0.5× 30 448
А. V. Kosobutsky Russia 13 300 1.2× 111 0.5× 329 2.0× 46 0.7× 11 0.2× 41 453
James Charles United States 9 142 0.6× 117 0.5× 152 0.9× 47 0.7× 6 0.1× 25 297
A. M. Danishevskiı̆ Russia 10 118 0.5× 67 0.3× 204 1.3× 33 0.5× 11 0.2× 39 299
Siu-Pang Chan Hong Kong 6 75 0.3× 83 0.4× 399 2.5× 37 0.6× 52 1.1× 8 436
A. V. Pokropivny Ukraine 10 62 0.3× 71 0.3× 310 1.9× 36 0.6× 100 2.1× 21 386
Masayuki Hiroi Japan 10 259 1.1× 125 0.6× 144 0.9× 63 1.0× 12 0.3× 27 336
Dirk Berben Germany 9 245 1.0× 241 1.1× 128 0.8× 22 0.3× 4 0.1× 18 372

Countries citing papers authored by T. Šimeček

Since Specialization
Citations

This map shows the geographic impact of T. Šimeček's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Šimeček with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Šimeček more than expected).

Fields of papers citing papers by T. Šimeček

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Šimeček. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Šimeček. The network helps show where T. Šimeček may publish in the future.

Co-authorship network of co-authors of T. Šimeček

This figure shows the co-authorship network connecting the top 25 collaborators of T. Šimeček. A scholar is included among the top collaborators of T. Šimeček based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Šimeček. T. Šimeček is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hospodková, A., K. Kuldová, J. Oswald, et al.. (2015). MOVPE prepared self-organised InAs/GaAs mono- and multi-layer quantum dot structures: magneto-photoluminescence study of electronic transitions. Università del Salento. 1(1). 55–58.
2.
Mikhaĭlova, M. P., K. D. Moiseev, Yu. P. Yakovlev, et al.. (2010). Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface. Semiconductors. 44(1). 66–71. 7 indexed citations
3.
Hospodková, A., E. Hulicius, J. Pangrác, et al.. (2009). InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots. Journal of Crystal Growth. 312(8). 1383–1387. 15 indexed citations
4.
Humlı́ček, J., et al.. (2009). Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe. Journal of Crystal Growth. 312(8). 1205–1209. 9 indexed citations
5.
Hospodková, A., J. Pangrác, J. Oswald, et al.. (2008). Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots. Journal of Crystal Growth. 310(23). 5081–5084. 7 indexed citations
6.
Hospodková, A., Vlastimil Křápek, T. Mates, et al.. (2006). Lateral shape of InAs/GaAs quantum dots in vertically correlated structures. Journal of Crystal Growth. 298. 570–573. 6 indexed citations
7.
Hulicius, E., et al.. (2006). Noise as a Diagnostic Tool for Quality of GaSb Laser Diodes. 33. 288–289. 1 indexed citations
8.
Fulem, Michal, Květoslav Růžička, Vlastimil Růžička, et al.. (2005). Vapour pressure measurement of metal organic precursors used for MOVPE. The Journal of Chemical Thermodynamics. 38(3). 312–322. 21 indexed citations
9.
Oswald, J., J. Pangrác, E. Hulicius, et al.. (2005). Electroluminescence of type II broken-gap p-Ga0.84In0.16As0.22Sb0.78∕p-InAs heterostructures with a high-mobility electron channel at the interface. Journal of Applied Physics. 98(8). 1 indexed citations
10.
Civiš, Svatopluk, T. Šimeček, E. Hulicius, et al.. (2004). GaSb based lasers operating near 2.3 μm for high resolution absorption spectroscopy. Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy. 61(13-14). 3066–3069. 10 indexed citations
11.
Toušek, J., et al.. (2004). Influence of photon recycling on photovoltage spectra of GaSb diodes. Journal of Applied Physics. 95(9). 5104–5110. 1 indexed citations
12.
Toušková, J., D. Kindl, J. Toušek, et al.. (2003). Current–voltage characteristics of GaSb homojunctions prepared by MOVPE. Solid-State Electronics. 47(9). 1471–1478. 4 indexed citations
13.
Vorlı́ček, V., K. D. Moiseev, M. P. Mikhaĭlova, et al.. (2002). Raman Scattering Study of Type II GaInAsSb/InAs Heterostructures. Crystal Research and Technology. 37(2-3). 259–267. 1 indexed citations
14.
Hulicius, E., et al.. (2002). Quantum size InAs/GaAs lasers-preparation and properties. 375–378.
15.
Moiseev, K. D., M. P. Mikhaĭlova, Yu. P. Yakovlev, et al.. (2002). Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs. Optical Materials. 19(4). 455–459. 4 indexed citations
16.
Genty, F., Bernard Fraisse, G. Boissier, et al.. (2001). MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers. Journal of Crystal Growth. 223(3). 341–348. 8 indexed citations
17.
Баранов, А. Н., Aaron Stein, K. Heime, et al.. (2000). InAs(PSb)-based “W” quantum well laser diodes emitting near 3.3 μm. Applied Physics Letters. 76(18). 2499–2501. 14 indexed citations
18.
Oswald, J., et al.. (2000). InAs/GaAs lasers with very thin active layer. Thin Solid Films. 380(1-2). 233–236. 6 indexed citations
19.
Bresler, M. S., O. B. Gusev, A. N. Titkov, et al.. (1993). Radiation recombination in type-II n-GaInAsSb/N-GaSb heterojunctions. Semiconductors. 27(4). 341–345. 3 indexed citations
20.
Attolini, G., et al.. (1986). Impurity incorporation and structural defects in hydride VPE InP films. Journal of Crystal Growth. 79(1-3). 386–393. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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