K. Izumi

1.6k total citations · 1 hit paper
64 papers, 1.2k citations indexed

About

K. Izumi is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Control and Systems Engineering. According to data from OpenAlex, K. Izumi has authored 64 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 60 papers in Electrical and Electronic Engineering, 11 papers in Biomedical Engineering and 7 papers in Control and Systems Engineering. Recurrent topics in K. Izumi's work include Semiconductor materials and devices (39 papers), Advancements in Semiconductor Devices and Circuit Design (38 papers) and Integrated Circuits and Semiconductor Failure Analysis (12 papers). K. Izumi is often cited by papers focused on Semiconductor materials and devices (39 papers), Advancements in Semiconductor Devices and Circuit Design (38 papers) and Integrated Circuits and Semiconductor Failure Analysis (12 papers). K. Izumi collaborates with scholars based in Japan, United States and Italy. K. Izumi's co-authors include Hisashi Ariyoshi, M. Doken, Yasuhisa Ōmura, Satοru Nakashima, Emi Yamada, Takao Ohno, Shuo Chen, T. Ishii, T. Sakai and Kunihiro Asada and has published in prestigious journals such as Journal of The Electrochemical Society, IEEE Transactions on Industrial Electronics and IEEE Journal of Solid-State Circuits.

In The Last Decade

K. Izumi

60 papers receiving 1.1k citations

Hit Papers

C.M.O.S. devices fabricated on buried SiO 2 layers formed... 1978 2026 1994 2010 1978 100 200 300 400
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into silicon
    1978 418 citations K. Izumi et al. Electronics Letters profile →

Peers

K. Izumi
S. Banerjee United States
K. Ohwada Japan
David Howard United States
Ariyoshi Nakaoki Japan
K. Asano Japan
Kimihiro Saito Japan
Y. Akasaka Japan
Jochen Schrӧeder United States
Isao Ichimura Japan
Dimitra Psychogiou United States
S. Banerjee United States
K. Izumi
Citations per year, relative to K. Izumi K. Izumi (= 1×) peers S. Banerjee

Countries citing papers authored by K. Izumi

Since Specialization
Citations

This map shows the geographic impact of K. Izumi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Izumi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Izumi more than expected).

Fields of papers citing papers by K. Izumi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Izumi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Izumi. The network helps show where K. Izumi may publish in the future.

Co-authorship network of co-authors of K. Izumi

This figure shows the co-authorship network connecting the top 25 collaborators of K. Izumi. A scholar is included among the top collaborators of K. Izumi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Izumi. K. Izumi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kawai, Yusuke, et al.. (2021). Interleave-Modes on a DC-DC Converter Using Three-Phase Transformer with Zero-Phase Current. 33. 190–195. 1 indexed citations
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Yamada, Emi, et al.. (2002). Dead beat control of DC chopper system with nonlinear load. 581–586. 3 indexed citations
6.
Yamada, Emi, et al.. (2002). Model following servo control of CSI-IM vector control system. 257–272. 3 indexed citations
7.
Izumi, K., et al.. (2002). Improvement of fuzzy auto-tuning method of DC chopper system using manipulated value. 224–229. 4 indexed citations
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Ohno, Takao, Satoshi Matsumoto, & K. Izumi. (2002). An intelligent-power IC fabricated by SIMOX technology. 164–165. 1 indexed citations
10.
Nakashima, Satοru, et al.. (1996). Investigations on High‐Temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers. Journal of The Electrochemical Society. 143(1). 244–251. 45 indexed citations
11.
Fujishima, Minoru, Keiichi Asada, Yasuhisa Ōmura, & K. Izumi. (1993). Low-Power 1/2 Frequency Dividers Using 0.1μm CMOS Circuits Built with Ultrathin SIMOX Substrates. IEICE Transactions on Electronics. 76(5). 850–852. 8 indexed citations
12.
Ohno, Takao, Satoshi Matsumoto, & K. Izumi. (1993). An intelligent power IC with double buried-oxide layers formed by SIMOX technology. IEEE Transactions on Electron Devices. 40(11). 2074–2080. 16 indexed citations
13.
Fujishima, Minoru, Kunihiro Asada, Yasuhisa Ōmura, & K. Izumi. (1993). Low-power 1/2 frequency dividers using 0.1- mu m CMOS circuits built with ultrathin SIMOX substrates. IEEE Journal of Solid-State Circuits. 28(4). 510–512. 29 indexed citations
14.
Nakashima, Satοru & K. Izumi. (1991). SIMOX wafers with low dislocation density produced by a 100-mA-class high-current oxygen implanter. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 55(1-4). 847–851. 24 indexed citations
15.
Miki, Hiroshi, Kunihiro Asada, T. Sugano, et al.. (1991). Subfemtojoule deep submicrometer-gate CMOS built in ultra-thin Si film on SIMOX substrates. IEEE Transactions on Electron Devices. 38(2). 373–377. 18 indexed citations
16.
Matsumoto, Satoshi, Takao Ohno, & K. Izumi. (1989). Study on Bi-CMOS devices utilising SIMOX technology. Electronics Letters. 25(14). 904–905. 3 indexed citations
17.
Izumi, K., Yasuhisa Ōmura, & Satοru Nakashima. (1989). Modification of a 100-mA-class high-current oxygen implanter and its application to ultrathin film MOSFET/SIMOX. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 37-38. 299–303. 4 indexed citations
18.
Izumi, K.. (1987). Applications of SIMOX technology to CMOS LSI and radiation-hardened devices. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 21(1-4). 124–128. 8 indexed citations
19.
Ōmura, Yasuhisa, Satοru Nakashima, & K. Izumi. (1983). Theoretical analysis on threshold characteristics of surface-channel MOSFET's fabricated on a buried Oxide. IEEE Transactions on Electron Devices. 30(12). 1656–1662. 8 indexed citations
20.
Izumi, K., Yasuhisa Ōmura, & T. Sakai. (1983). Simox technology and its application to CMOS LSIS. Journal of Electronic Materials. 12(5). 845–861. 32 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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