Jun Tatebayashi

2.8k total citations
127 papers, 2.2k citations indexed

About

Jun Tatebayashi is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, Jun Tatebayashi has authored 127 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 95 papers in Atomic and Molecular Physics, and Optics, 93 papers in Electrical and Electronic Engineering and 49 papers in Materials Chemistry. Recurrent topics in Jun Tatebayashi's work include Semiconductor Quantum Structures and Devices (79 papers), Semiconductor Lasers and Optical Devices (38 papers) and Photonic and Optical Devices (35 papers). Jun Tatebayashi is often cited by papers focused on Semiconductor Quantum Structures and Devices (79 papers), Semiconductor Lasers and Optical Devices (38 papers) and Photonic and Optical Devices (35 papers). Jun Tatebayashi collaborates with scholars based in Japan, United States and Ireland. Jun Tatebayashi's co-authors include Yasuhiko Arakawa, Masao Nishioka, Diana L. Huffaker, Satoshi Iwamoto, Ganesh Balakrishnan, Yasutomo Ota, Jinfa Ho, Toshihiro Nakaoka, L. R. Dawson and Noppadon Nuntawong and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Jun Tatebayashi

121 papers receiving 2.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jun Tatebayashi Japan 26 1.7k 1.6k 838 588 313 127 2.2k
M. Myronov United Kingdom 26 1.4k 0.8× 1.7k 1.1× 443 0.5× 465 0.8× 151 0.5× 182 2.2k
Kentarou Sawano Japan 27 1.5k 0.9× 1.5k 1.0× 646 0.8× 317 0.5× 122 0.4× 203 2.3k
R. Songmuang Germany 27 1.2k 0.7× 946 0.6× 869 1.0× 803 1.4× 673 2.2× 48 2.1k
Seth M. Hubbard United States 23 1.4k 0.8× 1.6k 1.0× 1.2k 1.4× 492 0.8× 246 0.8× 203 2.2k
Yong‐Hang Zhang United States 26 1.1k 0.6× 1.9k 1.2× 947 1.1× 339 0.6× 108 0.3× 167 2.3k
Mattias Hammar Sweden 25 1.3k 0.8× 1.2k 0.7× 401 0.5× 336 0.6× 143 0.5× 106 1.9k
А. А. Торопов Russia 22 1.4k 0.8× 1.2k 0.7× 1.0k 1.2× 297 0.5× 535 1.7× 234 2.0k
Moïra Hocevar France 19 1.1k 0.6× 798 0.5× 638 0.8× 851 1.4× 342 1.1× 38 1.8k
Mayank T. Bulsara United States 20 1.0k 0.6× 1.9k 1.2× 906 1.1× 553 0.9× 168 0.5× 70 2.6k
Giorgio Pettinari Italy 22 707 0.4× 648 0.4× 772 0.9× 337 0.6× 396 1.3× 82 1.4k

Countries citing papers authored by Jun Tatebayashi

Since Specialization
Citations

This map shows the geographic impact of Jun Tatebayashi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jun Tatebayashi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jun Tatebayashi more than expected).

Fields of papers citing papers by Jun Tatebayashi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jun Tatebayashi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jun Tatebayashi. The network helps show where Jun Tatebayashi may publish in the future.

Co-authorship network of co-authors of Jun Tatebayashi

This figure shows the co-authorship network connecting the top 25 collaborators of Jun Tatebayashi. A scholar is included among the top collaborators of Jun Tatebayashi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jun Tatebayashi. Jun Tatebayashi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Takahashi, S., Suguru Ito, Hiromitsu Onishi, et al.. (2025). Circularly polarized cavity mode emission from quantum dots in a semiconductor three-dimensional chiral photonic crystal. Applied Physics Letters. 126(8).
2.
Ichikawa, Shuhei, et al.. (2024). An efficiently excited Eu3+ luminescent site formed in Eu,O-codoped GaN. AIP Advances. 14(2).
3.
Shojiki, Kanako, Hideto Miyake, Shuhei Ichikawa, et al.. (2023). 229 nm far-ultraviolet second harmonic generation in a vertical polarity inverted AlN bilayer channel waveguide. Applied Physics Express. 16(6). 62006–62006. 7 indexed citations
4.
Tatebayashi, Jun, et al.. (2023). Formation and Optical Characteristics of GaN:Eu/GaN Nanowires for Applications in Light-Emitting Diodes. ECS Journal of Solid State Science and Technology. 12(9). 96003–96003. 1 indexed citations
5.
Tatebayashi, Jun, Shigehiko Hasegawa, Dolf Timmerman, et al.. (2022). Formation and optical characteristics of GaN:Eu/GaN core–shell nanowires grown by organometallic vapor phase epitaxy. Japanese Journal of Applied Physics. 61(SD). SD1022–SD1022. 4 indexed citations
6.
Ichikawa, Shuhei, et al.. (2021). Droop-free amplified red emission from Eu ions in GaN. Japanese Journal of Applied Physics. 60(12). 120905–120905. 4 indexed citations
7.
Tatebayashi, Jun, et al.. (2021). Formation and optical characteristics of ZnO:Eu/ZnO nanowires grown by sputtering-assisted metalorganic chemical vapor deposition. Japanese Journal of Applied Physics. 60(SC). SCCE05–SCCE05. 4 indexed citations
8.
Ichikawa, Shuhei, Yutaka Sasaki, Masaaki Ashida, et al.. (2021). Enhanced Red Emission of Eu,O-Codoped GaN Embedded in a Photonic Crystal Nanocavity with Hexagonal Air Holes. Physical Review Applied. 15(3). 11 indexed citations
9.
Timmerman, Dolf, et al.. (2020). Purcell-Effect-Enhanced Radiative Rate of Eu3+ Ions in GaN Microdisks. Physical Review Applied. 14(6). 11 indexed citations
10.
Tatebayashi, Jun, et al.. (2019). Enhanced luminescence efficiency of GaN:Eu-based light-emitting diodes by localized surface plasmons utilizing gold nanoparticles. Japanese Journal of Applied Physics. 58(SC). SCCC09–SCCC09. 3 indexed citations
11.
Mitchell, Brandon, Dolf Timmerman, T. Gregorkiewicz, et al.. (2019). Color-Tunablility in GaN LEDs Based on Atomic Emission Manipulation under Current Injection. ACS Photonics. 6(5). 1153–1161. 14 indexed citations
12.
Mitchell, Brandon, Dolf Timmerman, T. Gregorkiewicz, et al.. (2019). Picosecond time-resolved dynamics of energy transfer between GaN and the various excited states of Eu3+ ions. Physical review. B.. 100(8). 3 indexed citations
13.
Liang, Baolai, Nicola Pavarelli, Jun Tatebayashi, et al.. (2010). Lateral interdot carrier transfer in an InAs quantum dot cluster grown on a pyramidal GaAs surface. Nanotechnology. 22(5). 55706–55706. 22 indexed citations
14.
Liang, Baolai, Andrew Lin, Nicola Pavarelli, et al.. (2009). GaSb/GaAs type-II quantum dots grown by droplet epitaxy. Nanotechnology. 20(45). 455604–455604. 39 indexed citations
15.
Tatebayashi, Jun, A. Jallipalli, M. N. Kutty, et al.. (2008). Monolithically integrated III-Sb based laser diodes grown on miscut Si substrates. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6909. 69090M–69090M. 1 indexed citations
16.
Wong, P. S., Baolai Liang, V. G. Dorogan, et al.. (2008). Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure. Nanotechnology. 19(43). 435710–435710. 17 indexed citations
17.
Mehta, Manish, A. Jallipalli, Jun Tatebayashi, et al.. (2007). Room-Temperature Operation of Buffer-Free GaSb–AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65 $\mu$m. IEEE Photonics Technology Letters. 19(20). 1628–1630. 26 indexed citations
18.
Tatebayashi, Jun, Arezou Khoshakhlagh, S. Huang, et al.. (2006). Formation and optical characteristics of strain-relieved and densely stacked GaSb∕GaAs quantum dots. Applied Physics Letters. 89(20). 48 indexed citations
19.
Tatebayashi, Jun, Noppadon Nuntawong, Y.-C. Xin, et al.. (2006). Ground-state lasing of stacked InAs∕GaAs quantum dots with GaP strain-compensation layers grown by metal organic chemical vapor deposition. Applied Physics Letters. 88(22). 19 indexed citations
20.
Kita, Takashi, P. Jayavel, Hirokazu Tanaka, et al.. (2003). Wideband polarization insensitivity quantum dot optical amplifier. Conference on Lasers and Electro-Optics. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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