A. Jallipalli

804 total citations
20 papers, 633 citations indexed

About

A. Jallipalli is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, A. Jallipalli has authored 20 papers receiving a total of 633 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Atomic and Molecular Physics, and Optics, 19 papers in Electrical and Electronic Engineering and 1 paper in Condensed Matter Physics. Recurrent topics in A. Jallipalli's work include Semiconductor Quantum Structures and Devices (20 papers), Semiconductor Lasers and Optical Devices (12 papers) and Photonic and Optical Devices (8 papers). A. Jallipalli is often cited by papers focused on Semiconductor Quantum Structures and Devices (20 papers), Semiconductor Lasers and Optical Devices (12 papers) and Photonic and Optical Devices (8 papers). A. Jallipalli collaborates with scholars based in United States and United Kingdom. A. Jallipalli's co-authors include L. R. Dawson, Ganesh Balakrishnan, Diana L. Huffaker, Arezou Khoshakhlagh, S. H. Huang, S. Huang, Jun Tatebayashi, M. N. Kutty, Kalyan Nunna and P. Rotella and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

A. Jallipalli

19 papers receiving 614 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Jallipalli United States 13 560 540 126 119 39 20 633
Hanyou Chu United States 13 340 0.6× 505 0.9× 119 0.9× 95 0.8× 35 0.9× 28 573
Yu. M. Zadiranov Russia 12 439 0.8× 428 0.8× 67 0.5× 97 0.8× 27 0.7× 87 572
T. D. Mishima United States 17 568 1.0× 606 1.1× 251 2.0× 122 1.0× 102 2.6× 55 766
Charles J. Reyner United States 13 374 0.7× 338 0.6× 158 1.3× 71 0.6× 13 0.3× 34 440
G.J. Pryce United Kingdom 11 325 0.6× 294 0.5× 64 0.5× 58 0.5× 65 1.7× 16 391
J.K. Liu United States 12 430 0.8× 337 0.6× 46 0.4× 94 0.8× 119 3.1× 26 505
E. Martinet Switzerland 16 307 0.5× 475 0.9× 66 0.5× 90 0.8× 86 2.2× 38 522
A. Tahraoui United Kingdom 15 400 0.7× 473 0.9× 44 0.3× 123 1.0× 117 3.0× 24 623
Frank L. Madarasz United States 14 377 0.7× 377 0.7× 119 0.9× 51 0.4× 38 1.0× 34 549
M. T. Emeny United Kingdom 17 695 1.2× 707 1.3× 180 1.4× 173 1.5× 69 1.8× 49 936

Countries citing papers authored by A. Jallipalli

Since Specialization
Citations

This map shows the geographic impact of A. Jallipalli's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Jallipalli with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Jallipalli more than expected).

Fields of papers citing papers by A. Jallipalli

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Jallipalli. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Jallipalli. The network helps show where A. Jallipalli may publish in the future.

Co-authorship network of co-authors of A. Jallipalli

This figure shows the co-authorship network connecting the top 25 collaborators of A. Jallipalli. A scholar is included among the top collaborators of A. Jallipalli based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Jallipalli. A. Jallipalli is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Marshall, Andrew, Kalyan Nunna, Charles J. Reyner, et al.. (2012). Short-wave infrared GaInAsSb photodiodes grown on GaAs substrates. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8541. 85410F–85410F. 1 indexed citations
2.
Nunna, Kalyan, Charles J. Reyner, Andrew Marshall, et al.. (2011). Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique. IEEE Photonics Technology Letters. 24(3). 218–220. 27 indexed citations
3.
Jallipalli, A., et al.. (2009). Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations. Nanoscale Research Letters. 4(12). 1458–62. 51 indexed citations
4.
Tatebayashi, Jun, A. Jallipalli, M. N. Kutty, et al.. (2009). Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates. IEEE Journal of Selected Topics in Quantum Electronics. 15(3). 716–723. 19 indexed citations
5.
Jallipalli, A., Kalyan Nunna, M. N. Kutty, et al.. (2009). Electronic characteristics of the interfacial states embedded in “buffer-free” GaSb/GaAs (001) heterojunctions. Applied Physics Letters. 95(20). 8 indexed citations
6.
Jallipalli, A., Kalyan Nunna, M. N. Kutty, et al.. (2009). Compensation of interfacial states located inside the “buffer-free” GaSb/GaAs (001) heterojunction via δ-doping. Applied Physics Letters. 95(7). 12 indexed citations
7.
Tatebayashi, Jun, A. Jallipalli, M. N. Kutty, et al.. (2008). Monolithically integrated III-Sb based laser diodes grown on miscut Si substrates. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6909. 69090M–69090M. 1 indexed citations
8.
Jallipalli, A., et al.. (2008). Interfacial misfit dislocation array based growth of III-Sb active regions on GaAs/AlGaAs DBRs for high-power 2 μm VECSELs. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6871. 687111–687111. 7 indexed citations
9.
Tatebayashi, Jun, A. Jallipalli, M. N. Kutty, et al.. (2008). Device Characteristics of GaInSb/AlGaSb Quantum Well Lasers Monolithically Grown on GaAs Substrates by Using an Interfacial Misfit Array. Journal of Electronic Materials. 37(12). 1758–1763. 3 indexed citations
10.
Eyink, Kurt G., D. H. Tomich, W. C. Mitchel, et al.. (2008). Electrical and structural characterization of a single GaSb∕InAs∕GaSb quantum well grown on GaAs using interface misfit dislocations. Journal of Applied Physics. 104(7). 2 indexed citations
11.
Mehta, Manish, A. Jallipalli, Jun Tatebayashi, et al.. (2007). Room-Temperature Operation of Buffer-Free GaSb–AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65 $\mu$m. IEEE Photonics Technology Letters. 19(20). 1628–1630. 26 indexed citations
12.
Tatebayashi, Jun, A. Jallipalli, M. N. Kutty, et al.. (2007). Room-temperature lasing at 1.82μm of GaInSb∕AlGaSb quantum wells grown on GaAs substrates using an interfacial misfit array. Applied Physics Letters. 91(14). 19 indexed citations
13.
Jallipalli, A., M. N. Kutty, Ganesh Balakrishnan, et al.. (2007). 1.54 µm GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays. Electronics Letters. 43(22). 1198–1199. 25 indexed citations
14.
Jallipalli, A., Ganesh Balakrishnan, S. Huang, et al.. (2006). Modeling Misfit Dislocation Arrays for the Growth of Low-Defect Density AlSb on Si. MRS Proceedings. 934. 3 indexed citations
15.
Huang, S. H., Ganesh Balakrishnan, Arezou Khoshakhlagh, et al.. (2006). Strain relief by periodic misfit arrays for low defect density GaSb on GaAs. Applied Physics Letters. 88(13). 207 indexed citations
16.
Balakrishnan, Ganesh, A. Jallipalli, P. Rotella, et al.. (2006). Room-Temperature Optically Pumped (Al)GaSb Vertical-Cavity Surface-Emitting Laser Monolithically Grown on an Si(1 0 0) Substrate. IEEE Journal of Selected Topics in Quantum Electronics. 12(6). 1636–1641. 30 indexed citations
17.
Balakrishnan, Ganesh, S. Huang, Arezou Khoshakhlagh, et al.. (2006). Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate. Electronics Letters. 42(6). 350–352. 34 indexed citations
18.
Jallipalli, A., Ganesh Balakrishnan, S. Huang, et al.. (2006). Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials. Journal of Crystal Growth. 303(2). 449–455. 55 indexed citations
19.
Balakrishnan, Ganesh, Jun Tatebayashi, Arezou Khoshakhlagh, et al.. (2006). III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs. Applied Physics Letters. 89(16). 74 indexed citations
20.
Mehta, M., Ganesh Balakrishnan, S. Huang, et al.. (2006). GaSb quantum-well-based “buffer-free” vertical light emitting diode monolithically embedded within a GaAs cavity incorporating interfacial misfit arrays. Applied Physics Letters. 89(21). 29 indexed citations

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