Diana L. Huffaker

10.6k total citations · 2 hit papers
294 papers, 8.2k citations indexed

About

Diana L. Huffaker is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Diana L. Huffaker has authored 294 papers receiving a total of 8.2k indexed citations (citations by other indexed papers that have themselves been cited), including 249 papers in Electrical and Electronic Engineering, 240 papers in Atomic and Molecular Physics, and Optics and 80 papers in Materials Chemistry. Recurrent topics in Diana L. Huffaker's work include Semiconductor Quantum Structures and Devices (206 papers), Semiconductor Lasers and Optical Devices (119 papers) and Photonic and Optical Devices (110 papers). Diana L. Huffaker is often cited by papers focused on Semiconductor Quantum Structures and Devices (206 papers), Semiconductor Lasers and Optical Devices (119 papers) and Photonic and Optical Devices (110 papers). Diana L. Huffaker collaborates with scholars based in United States, United Kingdom and China. Diana L. Huffaker's co-authors include D.G. Deppe, O.B. Shchekin, Ganesh Balakrishnan, Zhihui Zou, Baolai Liang, L. R. Dawson, T. J. Rogers, S. Huang, Giacomo Mariani and Adam C. Scofield and has published in prestigious journals such as Physical Review Letters, Nature Communications and SHILAP Revista de lepidopterología.

In The Last Decade

Diana L. Huffaker

289 papers receiving 7.8k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

1.3 μm room-temperature GaAs-based quantum-dot laser

1998 583 citations Diana L. Huffaker, Zhihui Zou et al. Applied Physics Letters profile →
Native-oxide defined ring contact for low threshold vertical-cavity lasers

1994 417 citations Diana L. Huffaker, D.G. Deppe et al. Applied Physics Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Diana L. Huffaker United States	48	6.7k	6.2k	2.3k	2.1k	400	294	8.2k
Jonathan J. Finley Germany	53	5.6k 0.8×	6.9k 1.1×	3.3k 1.5×	2.8k 1.3×	485 1.2×	304	9.7k
Giovanni Isella Italy	39	4.7k 0.7×	3.6k 0.6×	2.0k 0.9×	1.7k 0.8×	205 0.5×	340	6.1k
Laurent Vivien France	46	7.8k 1.2×	5.3k 0.8×	1.7k 0.7×	2.0k 0.9×	177 0.4×	400	9.1k
L. Faraone Australia	32	4.7k 0.7×	2.6k 0.4×	1.6k 0.7×	947 0.4×	769 1.9×	426	5.9k
Mete Atatüre United Kingdom	42	5.0k 0.8×	6.7k 1.1×	4.2k 1.8×	1.3k 0.6×	177 0.4×	117	10.1k
J. M. Hvam Denmark	50	4.2k 0.6×	5.9k 1.0×	1.8k 0.8×	1.2k 0.6×	412 1.0×	313	7.5k
A. Badolato United States	40	4.2k 0.6×	6.6k 1.1×	1.3k 0.6×	1.7k 0.8×	211 0.5×	90	7.7k
Detlev Grützmacher Germany	49	6.1k 0.9×	5.6k 0.9×	3.3k 1.5×	2.8k 1.3×	1.3k 3.1×	461	9.5k
Mircea Guină Finland	33	4.3k 0.6×	3.9k 0.6×	737 0.3×	784 0.4×	347 0.9×	457	5.2k
R. Bhat United States	43	5.7k 0.8×	6.1k 1.0×	1.3k 0.6×	1.1k 0.5×	1.6k 4.0×	283	7.9k

Countries citing papers authored by Diana L. Huffaker

Since Specialization

Citations

This map shows the geographic impact of Diana L. Huffaker's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Diana L. Huffaker with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Diana L. Huffaker more than expected).

Fields of papers citing papers by Diana L. Huffaker

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Diana L. Huffaker. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Diana L. Huffaker. The network helps show where Diana L. Huffaker may publish in the future.

Co-authorship network of co-authors of Diana L. Huffaker

This figure shows the co-authorship network connecting the top 25 collaborators of Diana L. Huffaker. A scholar is included among the top collaborators of Diana L. Huffaker based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Diana L. Huffaker. Diana L. Huffaker is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lewis, H, Shiyu Xie, Baolai Liang, et al.. (2024). Impact ionization coefficients and excess noise in Al0.55Ga0.45As0.56Sb0.44 lattice matched to InP. Applied Physics Letters. 124(25). 2 indexed citations

Lewis, H, Shiyu Xie, Baolai Liang, et al.. (2023). Very low excess noise Al_0.75Ga_0.25As_0.56Sb_0.44 avalanche photodiode. Optics Express. 31(20). 33141–33141. 5 indexed citations

Ahmed, Jamal Uddin, Shiyu Xie, Baolai Liang, et al.. (2021). Theoretical Analysis of AlAs₀.₅₆Sb₀.₄₄ Single Photon Avalanche Diodes With High Breakdown Probability. IEEE Journal of Quantum Electronics. 57(2). 1–6. 2 indexed citations

Xie, Shiyu, Baolai Liang, H Lewis, et al.. (2021). Temperature Dependence of the Impact Ionization Coefficients in AlAsSb Lattice Matched to InP. IEEE Journal of Selected Topics in Quantum Electronics. 28(2: Optical Detectors). 1–8. 13 indexed citations

Huang, Jianliang, Chengcheng Zhao, Shiyu Xie, et al.. (2020). High-performance mid-wavelength InAs avalanche photodiode using AlAs_0.13Sb_0.87 as the multiplication layer. Photonics Research. 8(5). 755–755. 11 indexed citations

Liang, Baolai, et al.. (2019). Significant suppression of surface leakage in GaSb/AlAsSb heterostructure with Al ₂ O ₃ passivation. Japanese Journal of Applied Physics. 58(9). 90907–90907. 4 indexed citations

Xie, Shiyu, Baolai Liang, Leh Woon Lim, et al.. (2019). Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes. Nature Photonics. 13(10). 683–686. 72 indexed citations

Xie, Shiyu, Baolai Liang, Leh Woon Lim, et al.. (2018). Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP. Scientific Reports. 8(1). 9107–9107. 26 indexed citations

Azizur-Rahman, Khalifa M., et al.. (2018). Feasibility of achieving high detectivity at short- and mid-wavelength infrared using nanowire-plasmonic photodetectors with p–n heterojunctions. Nanotechnology. 30(4). 44002–44002. 14 indexed citations

10.

Lee, Wook‐Jae, Hyunseok Kim, Jong-Bum You, & Diana L. Huffaker. (2017). Ultracompact bottom-up photonic crystal lasers on silicon-on-insulator. Scientific Reports. 7(1). 9543–9543. 21 indexed citations

11.

Mariani, Giacomo, Yue Wang, Ping-Show Wong, et al.. (2012). Three-Dimensional Core–Shell Hybrid Solar Cells via Controlled in Situ Materials Engineering. Nano Letters. 12(7). 3581–3586. 40 indexed citations

12.

Shapiro, Joshua, A. Lin, Diana L. Huffaker, & Christian Rätsch. (2011). Potential energy surface of In and Ga adatoms above the (111)A and (110) surfaces of a GaAs nanopillar. Physical Review B. 84(8). 14 indexed citations

13.

Mehta, Manish, A. Jallipalli, Jun Tatebayashi, et al.. (2007). Room-Temperature Operation of Buffer-Free GaSb–AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65 $\mu$m. IEEE Photonics Technology Letters. 19(20). 1628–1630. 26 indexed citations

14.

Tatebayashi, Jun, Arezou Khoshakhlagh, S. Huang, et al.. (2006). Formation and optical characteristics of strain-relieved and densely stacked GaSb∕GaAs quantum dots. Applied Physics Letters. 89(20). 48 indexed citations

15.

Deppe, D.G., et al.. (1999). Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers. IEEE Journal of Quantum Electronics. 35(8). 1238–1246. 54 indexed citations

16.

Park, Gyoungwon, O.B. Shchekin, S.M. Csutak, Diana L. Huffaker, & D.G. Deppe. (1999). Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser. Applied Physics Letters. 75(21). 3267–3269. 125 indexed citations

17.

Huffaker, Diana L., et al.. (1995). Low Threshold Microcavity Lasers using a Half-Wave Cavity Spacer. QFB3–QFB3. 1 indexed citations

18.

Deppe, D.G., Diana L. Huffaker, C.C. Lin, & T. J. Rogers. (1994). Nearly Planar Low Threshold Vertical-Cavity Surface-Emitting Lasers Using High Contrast Mirrors and Native Oxidation. Conference on Lasers and Electro-Optics. 4 indexed citations

19.

Huffaker, Diana L., et al.. (1992). Controlled spontaneous emission in room-temperature semiconductor microcavities. Applied Physics Letters. 60(26). 3203–3205. 20 indexed citations

20.

Huffaker, Diana L., Zhaohui Huang, Chun Lei, et al.. (1992). Effect on spontaneous emission of quantum well placement in a short vertical cavity. Applied Physics Letters. 61(8). 877–879. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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